5216805 Search Results

Contextual Info: PC/100 SDRAM 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Contextual Info: 5216805-A60, HM5216405-A60, 5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The H M 5216805, H M 5216405 are

Contextual Info: PC/100 SDRAM 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

M5216

Contextual Info: ADE-203-304 B (Z) 5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising Aug. 4, 1995 Ordering Information edge of the clock input. The HM 5216805 Series,

HM5216805LTT-10

Abstract: HM5241
Contextual Info: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304C Z Rev, 3.0 Jan. 20,1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Contextual Info: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

M5216

Contextual Info: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304B Z Rev. 2.0 Dec. 10, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,

Nippon capacitors

Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M x 8 Components HITACHI ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The H B526C272EN , H B526C 472EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and

Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,

Contextual Info: 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,

Contextual Info: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674A Z Rev. 1.0 Jun. 3, 1997 Description The HB526R464DBK is a lM x 64 x 4 banks Synchronous Dynamic RAM Small Outline Dual in-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (5216805) sealed in TCP

Contextual Info: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

Contextual Info: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and

Contextual Info: 5216805-A60, HM5216405-A60, 5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The 5216805, HM5216405 are

NIPPON SMG

Abstract: 5216805 gt77
Contextual Info: HM5216405 Series Preliminary 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of the clock input. The HM5216405 is offered In 2 banks for improved performance. Features R b v . 0.1 Apr. 5 ,1 9 9 5

eeprom 24c02

Abstract: RD301 ASJ PTE
Contextual Info: HB526C272EN-10IN, HB526C472EN-10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15, 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line M emory Module) family, and

3xb7

Abstract: Nippon capacitors
Contextual Info: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674B Z Rev. 2.0 Sep. 2, 1997 Description The HB526R464DBK is a lM x 64 X 4 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (5216805) sealed in TCP

ACCM 5 pin

Contextual Info: ADE-203-304 C (Z) 5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM Prelim inary HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,

Nippon capacitors

Abstract: 0/B526C464EN
Contextual Info: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M x 8 Components HITACHI ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The H B526C264EN , H B526C 464EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and

1A11BS

Contextual Info: ADE-203-304A Z 5216805 Series HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI AH inputs and outputs are referred to the rising edge of the clock input. The HM521680S Series,

24c02CL

Contextual Info: Preliminary HB526A264EN-10/12/15 1,048,576-W ord x 64-Bit x 2bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8BYTE DIMM_ HITACHI The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized

Ba 33 bco

Contextual Info: NN5216 4 0 5 / 5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words

Contextual Info: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304B Z Rev. 2.0 Dec. 10, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,