Untitled
Abstract: No abstract text available
Text: PC/100 SDRAM 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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PC/100
HM5216805-A60,
HM5216405-A60
576-word
152-word
ADE-203-796
HM5216405
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Untitled
Abstract: No abstract text available
Text: 5216805-A60, HM5216405-A60, 5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The H M 5216805, H M 5216405 are
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HM5216805-A60,
HM5216405-A60,
HM5216805-B60,
HM5216405-B60
PC/100
ADE-203-796B
HM5216805/5216405-B60
HM5216805
HM5216405
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PDF
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Untitled
Abstract: No abstract text available
Text: PC/100 SDRAM 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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OCR Scan
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PC/100
HM5216805-A60,
HM5216405-A60
576-word
152-word
ADE-203-796
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PDF
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M5216
Abstract: No abstract text available
Text: ADE-203-304 B (Z) 5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising Aug. 4, 1995 Ordering Information edge of the clock input. The HM 5216805 Series,
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ADE-203-304
HM5216805
HM5216405
1048576-word
2097152-word
HM5216805TT-10
HM5216805TT-12
HM5216805TT-15
HM5216405TT-10
HM5216405TT-12
M5216
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HM5216805LTT-10
Abstract: HM5241
Text: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304C Z Rev, 3.0 Jan. 20,1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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HM5216805
HM5216405
576-word
152-word
ADE-203-304C
Hz/83
Hz/66
HM5216805LTT-10
HM5241
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Untitled
Abstract: No abstract text available
Text: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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HM5216805
HM5216405
576-word
152-word
ADE-203-304D
Hz/83
HM5216805/5216405-1
HM5216805/5216405L-10H/10
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PDF
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M5216
Abstract: No abstract text available
Text: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304B Z Rev. 2.0 Dec. 10, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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OCR Scan
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HM5216805
HM5216405
576-word
152-word
ADE-203-304B
Hz/83
Hz/66
M5216
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 72-bit, 66 MHz Memory Bus, 1/2-Bank Module 9/18 pcs of 2 M x 8 Components HITACHI ADE-203-693D (Z) Rev. 4.0 Nov. 1997 Description The H B526C272EN , H B526C 472EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and
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HB526C272EN-10IN,
HB526C472EN-10IN
72-bit,
ADE-203-693D
B526C272EN
B526C
472EN
B526C272EN
16-Mbit
5216805TT)
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526C264EN-10IN, HB526C464EN-10IN 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-737A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family,
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HB526C264EN-10IN,
HB526C464EN-10IN
576-word
64-bit
ADE-203-737A
HB526C264EN,
HB526C464EN
HB526C264EN
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PDF
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Untitled
Abstract: No abstract text available
Text: 5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,
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OCR Scan
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HM5216805-A60,
HM5216405-A60
576-word
152-word
ADE-203-796
HM5216805
HM5216405
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674A Z Rev. 1.0 Jun. 3, 1997 Description The HB526R464DBK is a lM x 64 x 4 banks Synchronous Dynamic RAM Small Outline Dual in-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (5216805) sealed in TCP
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HB526R464DBK-10H/10/12
576-word
64-bit
ADE-203-674A
HB526R464DBK
16-Mbit
HM5216805)
24C02)
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: HB526R864ESN-10H/10/12 4,194,304-word x 64-bit Non Parity x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-671C (Z) Rev. 3.0 Jul. 25, 1997 Description The HB526R864ESN belongs to 8 byte DIMM (Dual In-line Memory Module) family, and has been developed a as optimized main memory solution for 8 byte processor applications. The HB526R864ESN is
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HB526R864ESN-10H/10/12
304-word
64-bit
ADE-203-671C
HB526R864ESN
16-Mbit
HM5216405)
24C02)
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PDF
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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Untitled
Abstract: No abstract text available
Text: HB526C272EN-10IN, HB526C472EN -10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15,1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C272EN-10IN,
HB526C472EN
-10IN
576-word
72-bit
ADE-203-693C
HB526C272EN,
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PDF
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Untitled
Abstract: No abstract text available
Text: 5216805-A60, HM5216405-A60, 5216805-B60, HM5216405-B60 16M LVTTL interface SDRAM 100 MHz 1-Mword x 8-bit/2-Mword x 4-bit PC/100 SDRAM HITACHI ADE-203-796B Z Preliminary Rev. 0.3 Dec. 23, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The 5216805, HM5216405 are
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OCR Scan
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HM5216805-A60,
HM5216405-A60,
HM5216805-B60,
HM5216405-B60
PC/100
ADE-203-796B
HM5216805,
HM5216405
HM5216805/5216405-B60
HM5216805
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PDF
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NIPPON SMG
Abstract: 5216805 gt77
Text: HM5216405 Series Preliminary 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI All Inputs and outputs are referred to the rising edge of the clock input. The HM5216405 is offered In 2 banks for improved performance. Features R b v . 0.1 Apr. 5 ,1 9 9 5
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HM5216405
152-word
HM5216405TT-10
HM5216405TT-12
HM521640STT-15
400-mll
44-pln
TTP-44DE)
Hz/83
NIPPON SMG
5216805
gt77
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PDF
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eeprom 24c02
Abstract: RD301 ASJ PTE
Text: HB526C272EN-10IN, HB526C472EN-10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15, 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line M emory Module) family, and
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OCR Scan
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HB526C272EN-10IN,
HB526C472EN-10IN
576-word
72-bit
ADE-203-693C
HB526C272EN,
HB526C472EN
HB526C272EN
eeprom 24c02
RD301
ASJ PTE
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PDF
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3xb7
Abstract: Nippon capacitors
Text: HB526R464DBK-10H/10/12 1,048,576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-674B Z Rev. 2.0 Sep. 2, 1997 Description The HB526R464DBK is a lM x 64 X 4 banks Synchronous Dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit SDRAM (5216805) sealed in TCP
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HB526R464DBK-10H/10/12
576-word
64-bit
ADE-203-674B
HB526R464DBK
16-Mbit
HM5216805)
24C02)
144-pin
3xb7
Nippon capacitors
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PDF
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ACCM 5 pin
Abstract: No abstract text available
Text: ADE-203-304 C (Z) 5216805 Series HM5216405 Series 1048576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2097152-word x 4-bit x 2-bank Synchronous Dynamic RAM Prelim inary HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,
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OCR Scan
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ADE-203-304
HM5216805
HM5216405
1048576-word
2097152-word
HM5216805TT-10
HM5216805TT-12
HM5216B05TT-15
ACCM 5 pin
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PDF
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Nippon capacitors
Abstract: 0/B526C464EN
Text: HB526C264EN-10IN, HB526C464EN-10IN 16/32 MB Unbuffered SDRAM DIMM 2-M/4-Mword x 64-bit, 66 MHz Memory Bus, 1/2-Bank Module 8/16 pcs of 2 M x 8 Components HITACHI ADE-203-737D (Z) Rev. 4.0 Nov. 1997 Description The H B526C264EN , H B526C 464EN belong to 8-byte D IM M (D ual In-line M em ory M odule) fam ily, and
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HB526C264EN-10IN,
HB526C464EN-10IN
64-bit,
ADE-203-737D
B526C264EN
B526C
464EN
B526C264EN
16-Mbit
5216805TT)
Nippon capacitors
0/B526C464EN
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PDF
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1A11BS
Abstract: No abstract text available
Text: ADE-203-304A Z 5216805 Series HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI AH inputs and outputs are referred to the rising edge of the clock input. The HM521680S Series,
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ADE-203-304A
HM5216805
HM5216405
576-word
152-word
HM521680S
HM5216805TT-10
HM5216805TT-12
HM5216805TT-15
HM5216405TT-10
1A11BS
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PDF
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24c02CL
Abstract: No abstract text available
Text: Preliminary HB526A264EN-10/12/15 1,048,576-W ord x 64-Bit x 2bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8BYTE DIMM_ HITACHI The HB526A264EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized
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HB526A264EN-10/12/15
64-Bit
168-pin
HB526A264EN
16-Mbit
HM5216805TT)
24C02)
24c02CL
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PDF
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Ba 33 bco
Abstract: No abstract text available
Text: NN5216 4 0 5 / 5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words
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NN5216
NN5216805
16Mbit
NN5216405)
NN5216805)
0QQlb27
NN5216405/
Ba 33 bco
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PDF
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Untitled
Abstract: No abstract text available
Text: 5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304B Z Rev. 2.0 Dec. 10, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The 5216805 Series,
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OCR Scan
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HM5216805
HM5216405
576-word
152-word
ADE-203-304B
Hz/83
Hz/66
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PDF
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