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    Text: 51V17405B series EDO Hyper Page Mode CMOS 4M x 4bit Dynamic RAM ^ w DESCRIPTION The N N 51V17405B series is a high perform ance C M OS D ynam ic Random Access M em ory organized as 4,194,304 words by 4 bits. The 51V17405B series is fabricated with advanced C M OS technology and designed with innovative de­


    OCR Scan     		PDF NN51V17405B 51V17405B NN51V17405BL NN51V17405BXXi 128ms OOQ1G44