51DBM Search Results

TN6487

Abstract: BX6487 FP6487 TM6487
Contextual Info: Available as: RF AMPLIFIER MODEL TM6487 TM6487, 4 Pin TO-8 T4 TN6487, 4 Pin Surface Mount (SM3) FP6487, 4 Pin Flatpack (FP4) BX6487, Connectorized Housing (H1) Features Typical Intermodulation Performance at 25 º C ! ! ! ! Second Order Harmonic Intercept Point . +51dBm (Typ.)

Contextual Info: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

JDSU ETX 500

Abstract: JDSU ETX 75 JDSU ETX 100 0603CS LTC2208 LTC6400 LTC6400CUD-26 LTC6400IUD-26 LTC6401
Contextual Info: LTC6400-26 1.9GHz Low Noise, Low Distortion Differential ADC Driver for DC-300MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.9GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)

EGNC105MK

Contextual Info: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater

Contextual Info: EGNC105MK High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 51dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Linear Gain : 20dB(typ.) @ f=0.9GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater

132-60 wj 70

Abstract: MARKING A1505 A1505 JESD22-A114 WJA1505 WJA1505-PCB
Contextual Info: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

Contextual Info: LTC6400-20 1.8GHz Low Noise, Low Distortion Differential ADC Driver for 300MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.8GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)

Contextual Info: LT6402-20 300MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 20dB DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 300 MHz –3dB Bandwidth Fixed Gain of 20dB Low Distortion: 51dBm OIP3, –81dBc HD3 (20MHz, 2VP-P) Low Noise:

Contextual Info: LTC6400-26 1.9GHz Low Noise, Low Distortion Differential ADC Driver for DC-300MHz FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.9GHz –3dB Bandwidth Fixed Gain of 20V/V 26dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)

EGNC105MK

Abstract: hemt 105w JESD22-A114 0 280 130 094
Contextual Info: EGNC105MK GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 51dBm typ. @ Psat ・High Efficiency: 70%(typ.) @ Psat ・Linear Gain : 20dB(typ.) @ f=0.9GHz ・Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater

bandpass filter f center 20MHz group

Abstract: LTC6400 LTC6400 LCCS LTC2208 LTC6400CUD-20 LTC6401 LTC6401-20
Contextual Info: LTC6400-20 1.8GHz Low Noise, Low Distortion Differential ADC Driver for 300MHz IF FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION 1.8GHz –3dB Bandwidth Fixed Gain of 10V/V 20dB –94dBc IMD3 at 70MHz (Equivalent OIP3 = 51dBm)

Contextual Info: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

AM000551SF-2H

Abstract: amcomusa
Contextual Info: High Power Amplifier Module 30 – 500MHz, 26dB, 125 Watts AM000551SF-2H April 2010 Rev 3 DESCRIPTION AM000551SF-2H is a Broadband High Power Amplifier designed for high power RF applications. It operates from 30MHz to 500MHz and typically delivers 51dBm CW output power and 28dB small signal gain. The amplifier

AM091251SF-1H

Contextual Info: High Power Amplifier Module 0.95 – 1.25GHz, 10dB, 125 Watts AM091251SF-1H April 2010 Rev 2 DESCRIPTION AMCOM’s AM091251SF-1H is a Broadband Power Amplifier designed for high power microwave applications. It operates from 950MHz to 1250MHz and typically delivers 51dBm CW output power and 10dB gain small signal .

LA4550 equivalent

Abstract: LA4550
Contextual Info: Ordering number:ENN1718B Monolithic Linear IC LA4550 2-Channel AF Power Amplifier for Radio, Tape Recorder Use Features Package Dimensions • Low quiescent current. • On-chip 2 channels permitting use in stereo and bridge amplifier applications. • High output.

Contextual Info: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers

KESTX01

Abstract: KESTX02
Contextual Info: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a

56F8037

Abstract: MC56F8037 CH1837A BSS 97 NV 15F v.8bis XE0092 56F8323 56F8346 56F8357
Contextual Info: Freescale Semiconductor Application Note Document Number: AN3607 Rev. 0, 4/2008 A Low-Cost Soft Modem Using the Freescale Digital Signal Controller MC56F802x/3x Series Using On-Chip ADC and DAC by: John L. Winters Systems and Applications Engineering Tempe, Arizona, USA

LTC 1993

Abstract: ETC1-1-13 LT1993-4 LT1993CUD-4 LT1993IUD-4 LTC2255
Contextual Info: LT1993-4 900MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 4V/V DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1993-4 is a low distortion, low noise Differential Amplifier/ADC driver for use in applications from DC to

sigma sc30

Abstract: STMicroelectronics supressor ST75C530 ST75C530FP-A ST75C540 ST75C540FP-A T104 TQFP80 wiring diagram echo microphone schematics analog satellite receiver
Contextual Info: ST75C530 ST75C540 SUPER INTEGRATED DEVICES WITH DSP, AFE & MEMORIES FOR TELEPHONY, MODEM, FAX OVER INTERNET & POTS LINES SUMMARIZED FEATURES for detailed features, see page 4 . . . . . . . . SINGLE CHIP FAX Up to 14.4Kbps (V.17) FULL DUPLEX DATA MODEM UP TO

1000 watt amplifier

Abstract: 1000 watts power amp AD8362 RF power amplifier MHz 2 Watt rf Amplifier
Contextual Info: Model SM08010-51LD 800 - 1000 MHz 120 Watt Power Amplifier The SM08010-51LD is an 800-1000 MHz LDMOS amplifier designed for various military and commercial applications. Features • • • Mis-Match Protected with BuiltIn Isolator Single Power Supply Temperature Compensation

LA4550

Contextual Info: Ordering number:ENN1718B Monolithic Linear IC LA4550 2-Channel AF Power Amplifier for Radio, Tape Recorder Use Features Package Dimensions • Low quiescent current. • On-chip 2 channels permitting use in stereo and bridge amplifier applications. • High output.

autobaud

Abstract: 1E97 0C00 B103 ST18933 ST75C502
Contextual Info: APPLICATION NOTE ST75C502 - RAM MAPPING By William GLASS CONTENTS Page I INTRODUCTION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 II ECHO CANCELLER V.32bis only . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Common PCN Handset Specification Phase 2 v4.2

Abstract: sim 300 GSM MODEM AT commands sim 300s gsm modem datasheet SMS controlled LED based scrolling message display sim card chips sim 300s gsm modem 3g call flow str 630 msc gsm MC75 siemens
Contextual Info: Multi-Tech Wireless EDGE Modem AT Commands Reference Guide Copyright and Technical Support AT Commands for Multi-Tech EDGE Modems Reference Guide PN S000371A, Revision A Copyright This publication may not be reproduced, in whole or in part, without prior expressed written permission from