51A SO 8 Search Results

fast diode SOT-227

Contextual Info: APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

k300k1

Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Contextual Info: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm

p65C51

Contextual Info: HARRIS SEMÏCOND SECTOR [£ } MGE D m 4302271 Q0332fi3 T E2JHAS H L A J R R IS c CD January 1991 CMOS Asynchronous Communications -0 5 Interface A dapter ACIA Features • • • • • • • • • • • • • • • P in o u t C o m patible W ith 8 -B lt M icroprocessors

45V7

Abstract: AN-994 IRL3402 IRL3402S
Contextual Info: PD - 9.1693 IRL3402S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G ID = 85A† S Description These HEXFET Power MOSFETs were designed

Contextual Info: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8011JFLL

Contextual Info: APT8011JFLL 800V 51A 0.110Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

IRL3402

Abstract: MOSFET 700V TO 220
Contextual Info: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A… S These HEXFET Power MOSFETs were designed

Contextual Info: APT8011JLL 800V 51A 0.110Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8011JLL

Contextual Info: APT8011JLL 800V 51A 0.110Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 9.1697 International IÖR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R ü S o n = 0 . 0 1 Í 2 Id = 8 5 A Description

6v8a

Abstract: 67 6283 PFZ47 BZW06-5V8 BZW06-6V4 BZW06-7V0 BZW06-7V8 DTZ10 DTZ15 P6KE10A
Contextual Info: transient voltage suppressors «TRANSIL» diodes de p rotection «TRANSIL» THOMSON-CSF Types Unidirec­ tional 1,5 KW PFZ 6V8 PFZ 6V8 A PFZ 7V5 PFZ 7V5 A PFZ 8V2 PFZ 8V2 A PFZ 9V1 PFZ 9V1 A PFZ 10 PFZ 10 A PFZ 11 PFZ 11 A PFZ 12 PFZ 12 A PFZ 13 PFZ 13 A PFZ 15

Contextual Info: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed

Contextual Info: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT50M75JFLL

Abstract: APT50M75
Contextual Info: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT8011JLL 800V 51A 0.110W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON and Qg. Power MOS 7TM combines lower conduction and switching losses

APT55M85JFLL

Contextual Info: APT55M85JFLL 550V POWER MOS 7 R 0.085Ω 51A FREDFET FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

computer smps circuit diagram

Abstract: 24 volt output smps reference design datasheet capacitor 3.3UF TS2950 5.0 TS2951 marking c07 8pin LP2951 marking ultra stable voltage reference LP2950 LP2951
Contextual Info: TS2950/TS2951 150mA Ultra Low Dropout Voltage Regulator SOP-8 Pin Definition: 1. Output 2. Sense 3. Shutdown 4. Ground TO-92 Pin Definition: 1. Output 2. Ground 3. Input 8. Input 7. Feedback 6. Voltage tap 5. Error flag TO-252 Pin Definition: 1. Input 2. Ground

Contextual Info: PD - 94823 IRFZ44RPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications l Lead-Free Description

Contextual Info: PD - 93956 IRFZ44R HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Drop in Replacement of the IRFZ44 for Linear/Audio Applications

APT50M75JLL

Abstract: GV3000
Contextual Info: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: PD - 9.893A IRFZ44S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ44S Low-profile through-hole (IRFZ44L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.028Ω G ID = 50A† S Description Third Generation HEXFETs from International Rectifier

fast diode SOT-227

Contextual Info: APT50M75JFLL 500V POWER MOS 7TM FREDFET Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS S S Power MOS 7TM is a new generation of low loss, high voltage, N-Channel

8 pin ic 9435A

Abstract: 9435a 9435A transistor c442 diode c446 transistor irfz40 RFZ4 diode c446 9435a mosfet IRFZ42N
Contextual Info: HE D I ^<355452 OQQôtilE 3 | Data Sheet No. PD-9.435A INTERNATIONAL R E C T IF IE R T-39-13 I N T E R N A T I O N A L R E C T I F I E R Ii o r I HEXFET TRANSISTORS IRFZ40 IRFZ42 N -C h a n n e l 5 0 VOLT POWER MOSFETs Product Summary 50 Volt, 0.028 Ohm HEXFET

MSM82C51

Abstract: msm82c51a-2r
Contextual Info: O K I S e m ic o n d u c to r M S M 82C 51A -2 R S /G S /JS U N IV E R S A L S Y N C H R O N O U S A S Y N C H R O N O U S R E C E IV E R T R A N S M IT T E R G ENERAL DESCRIPTIO N The MSM82C51 A-2 is a USART Universal Synchronous A synchronous Receiver Transm itter for