514256B Search Results

HYB514256B-50

Abstract: HYB514256B-60 HYB514256B-70 HYB514256BJ-50 HYB514256BJ-60 HYB514256BJ-70 HYB514256BL-50 514256 514256b-70
Contextual Info: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

MSM51C256A

Abstract: MSC2321B-70YS18
Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC2321B-xxYS18/DS18 is a fully decoded 524,288-w o rd x 36-bit CMOS D ynam ic R andom Access M em ory M odule com posed of sixteen 1-Mb DRAMs in SOJ M SM 514256B packages an d eight

P5501

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 A d v a n c e d In fo rm a tio n 2 62 144 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % su p p ly w ith a bu ilt-in f 'BB

BL-70

Abstract: 514256B-80 514256B-70 514256BZ-70
Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJUBZL-60/-70 Advanced Information • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

5117400

Abstract: sem 2500 7212 tube
Contextual Info: Packing Information SIEM ENS DRAMS in Tape & Reel Package Type Device Type Devices Per Reel Tape Width P-SOJ-26/20-1 ' HYB 5 1 1000BJ HYB 514256BJ 1500 24 mm P-SO J-26/20-5?l HYB 514100BJ HYB 514400BJ 1500 24 mm P-SOJ-28-2 HYB 514800BJ 1000 24 mm P-SOJ-40-1

514256

Abstract: 514256BJ-70 Q67100-Q1044 514256b-60
Contextual Info: 256 K x 4-Bit Dynamic RAM Low Power 256 K × 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information 262 144 words by 4-bit organization • Fast access and cycle time 50 ns access time 95 ns cycle time -50 version 60 ns access time

Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode D E SC R IP TIO N The OKI M S C 2333B -xxY S 16/D S 16 is a fully d eco d ed 524,288-w o rd x 32-b it CM OS D ynam ic R an dom A ccess M em ory M odule com p osed of sixteen 1-Mb D RAM s in SOJ M SM 514256B p ack ages m ounted

YS16

Abstract: JTS5
Contextual Info: O K I Semiconductor MSC2333B-XXYS16/DS16 524,288-Word by 32-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2333B-xxY S16/D S16 is a fully decoded 524,288-w ord x 32-bit CM O S D ynam ic Random Access M em ory M odule com posed of sixteen 1-Mb DRAM s in SOJ M SM 514256B packages mounted

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ/BZ-60/-70/-80 HYB 514256BL/BJL/BZL-60/-70 Advanced Inform ation • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

Contextual Info: SIEM ENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 w ords by 4-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60

bl70

Abstract: q542 514256B-80
Contextual Info: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advanced Inform ation • • • • • • • • • • 262 144 words by 4-bit organization Fast access and cycle time 60 ns access tim e 110 ns cycle tim e HYB 514256B/BL-60

M514256B

Abstract: *m514256B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 514256B MCM51L4256B 256K x 4 Bit CMOS Dynamic RAM Page Mode The M C M 514256B is a 0.8n C M OS high-speed dynam ic random access memory. It is organized as 262,144 fo u r-bit words and fabricated w ith C M OS silicon-gate pro­

Contextual Info: SIEMENS 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 A d va n c e In fo rm atio n • • 262 144 w o rd s by 4 -b it org a n iza tio n F ast a cce ss and cycle tim e 60 ns acce ss tim e 110 ns cycle tim e H Y B 5142 5 6B /B L -60

Contextual Info: O K I Semiconductor MSC2320B-XXYS9/DS9 262,144-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 2320B-xxY S9/D S9 is a fully decoded 262,144-w ord x 36-bit CM OS Dynamic Random Access Memory M odule . It is com posed of eight 1-Mb DRAM s in SO J M SM 514256B packages, and four 256Kb

BL70M

Abstract: SA73A
Contextual Info: O K I semiconductor 514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The M SM 514256B/B L is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514256B/BL is OKI's CM OS silicon gate process technology.

siemens EM 235 cn

Contextual Info: SIEMENS 256 K X 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM HYB 514256B/BJ-50/-60/-70 HYB 514256BL/BJL-50/-60/-70 Advanced Information VBB • 262 144 words by 4-bit organization • Single + 5 V ± 10 % supply with a built-in generator Output unlatched at cycle end allows two_

m925

Abstract: TC514256BJ tc51256t
Contextual Info: 262,144 WORDS x9 BIT DYNAMIC RAM PRELIMINARY MODULE DESCRIPTION The THM 92500BS is a 262,144 words by 9 bits dynamic RAM module which assembled 2 pcs of T C 514256BJ and lpcs of TC51256T on the printed circuit board. The THM 92500BS is optimized for application to the systems which are required high density and large capacity such a s main memory of

514256b-70

Abstract: 514256
Contextual Info: SIEM EN S 256K X 4-Bit Dynamic RAM HYB 514256B-60/-70/-80 HYB 514256BL-60/-70 Advance Information • 262 144 words by 4-bit organization • Fast access and cycle time 60 ns access time 110 ns cycle time HYB 514256B/BL-60 70 ns cycle time 130 ns cycle time (HYB 514256B/BL-70)

Contextual Info: TopTech Semiconductors. Siemens DK> Siemens AG Österreich Postfach 326 1031 Wien 8 (01 71711-5661 El 1372-10 Fax (01) 71711-5973 Siemens Ltd., Head Office 544 Church Street Richmond (Melbourne), Vie. 3121 S (03) 4207111 02 30425 Fax (03) 4 2072 75 Siemens AG

Contextual Info: O K I Semiconductor 514256B/BL 262,144-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 514256B/BL is a new generation dynamic RAM organized as 262,144-word x 4-bit. The technology used to fabricate the 514256B/BL is OKI's CMOS silicon gate process technology.

Contextual Info: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70

Siemens HYB 41256-12

Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
Contextual Info: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347

Contextual Info: O K I semiconductor 514256B/BL 262,144-W ord x 4-Bit DYNAMIC RAM GENERAL DESCRIPTION The 514256B/BL is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the 514256B/BL is OKI's CMOS silicon gate process technology.

DYNAMIC RAM CROSS REFERENCE

Abstract: DYNAMIC RAM dynamic ram module 5116800 hyb 511
Contextual Info: SIEM EN S Contents Contents Page Summary of Types incl. ordering codes . 9 Packing Inform