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    Elpress AB KRF95-12X2-40

    BATTERY LUG 2-HOLE 95 MM M12
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    Elpress AB KRF185-12X2-40

    BATTERY LUG 2-HOLE 185 MM M12
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    DigiKey KRF185-12X2-40 Bulk 20
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    3M 3M-4951-2--X-2--5

    TAPE DBL COATED/SIDED WHT 2"X2"
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    DigiKey 3M-4951-2--X-2--5 Bulk 3
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    3M 3M-4951-2--X-2--65

    TAPE DBL COATED/SIDED WHT 2"X2"
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    3M 3M-1345-1-2--X-2--100

    RF SHLDING SHEET 2"X0.5" 100PK
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    512X2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GLT44032-E 128K x 32 Embedded EDO DRAM Macro FEATURES ◆ Logical organization: 128Kx32 bits ◆ Physical organization: 512x256x32 ◆ Single 3.3v ± 0.3v power supply ◆ 512-cycle refresh in 8 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Single CAS with 4 DQM for Byte Write control


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    PDF GLT44032-E 128Kx32 512x256x32 512-cycle GLT44032-E

    GLT44032-E

    Abstract: No abstract text available
    Text: GLT44032-E 128K x 32 Embedded EDO DRAM Macro FEATURES ◆ Logical organization: 128Kx32 bits ◆ Physical organization: 512x256x32 ◆ Single 3.3v ± 0.3v power supply ◆ 512-cycle refresh in 8 ms ◆ Refresh modes: RAS only, CBR, and Hidden ◆ Single CAS with 4 DQM for Byte Write control


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    PDF GLT44032-E 128Kx32 512x256x32 512-cycle GLT44032-E

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Middle Power Class-D Speaker Amplifier series 20W+20W Full Digital Speaker Amplifier with built-in DSP BM28720MUV General Description Features • BM28720MUV is a Full Digital Speaker Amplifier with built-in DSP Digital Sound Processor designed for


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    PDF BM28720MUV BM28720MUV

    vga cmos

    Abstract: samsung CMOS image sensor S5K* CMOS CMOS image sensor with global shutter 14 pin cmos IMAGE SENSOR CMOS global shutter cmos IMAGE SENSOR global shutter S5K437CX01 S5K437CX02 vga cmos monochrome global
    Text: S5K437CX 1/4" VGA CMOS Image Sensor DATA SHEET Revision 1.1 DOCUMENT TITLE 1/4" Optical Size 640 x 480 (VGA) 2.8V CMOS Image Sensor REVISION HISTORY Revision No. History Draft Date 0.0 Initial Draft Mar, 01. 2004 1.0 Changed the operation frequency (30MHz → 24.54MHz).


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    PDF S5K437CX 30MHz 54MHz) vga cmos samsung CMOS image sensor S5K* CMOS CMOS image sensor with global shutter 14 pin cmos IMAGE SENSOR CMOS global shutter cmos IMAGE SENSOR global shutter S5K437CX01 S5K437CX02 vga cmos monochrome global

    ad 161

    Abstract: vhdl code PN code generator ad 152 transistor ad 153 transistor S-108 PF144 PQ208 QL5130 QL5130-33APF144C QL5130-33APQ208C
    Text: QL5130 - QuickPCITM 33 MHz/32-bit PCI Target with Embedded Programmable Logic and Dual Port SRAM last updated 12/1099 Device Highlights DEVICE HIGHLIGHTS Q8DÃ7ˆ†Ã±Ã""ÃHC“Ã"!Ãiv‡†Ãqh‡hÃhqÃhqq…r†† High Performance PCI Controller • 32-bit / 33 MHz PCI Target


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    PDF QL5130 Hz/32-bit 32-bit 95/98/Win ad 161 vhdl code PN code generator ad 152 transistor ad 153 transistor S-108 PF144 PQ208 QL5130-33APF144C QL5130-33APQ208C

    Untitled

    Abstract: No abstract text available
    Text: Standard Products UT4090 RadHard FPGA Advanced Data Sheet February 21, 2001 FEATURES q 0.35µm four-layer metal non-volatile CMOS process for smallest die sizes q One-time programmable, ViaLink TM antifuse technology for personalization q 150 MHz 16-bit counters, 200 MHz datapaths, 80+ MHz


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    PDF UT4090 16-bit MIL-STD-883 MIL-PRF-38535. MIL-STD-1835. 208-pin

    QL5332-33APQ208C

    Abstract: 1.9 TDI Schematic PB256 PCI32 PQ208 QL5032 QL5332 PCI32N AD1892
    Text: QL5332 - Enhanced QuickPCITM Device 33 MHz/32-bit PCI Master/Target with Embedded Programmable Logic and Dual Port SRAM last updated 2/5/01 QL5332 - Enhanced QL5032 • ■ ■ ■ ■ ■ ■ PCI Bus – 33 MHz 32 bits data and address Supports all PCI commands (including configuration


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    PDF QL5332 Hz/32-bit QL5032 QL5332-33APQ208C 1.9 TDI Schematic PB256 PCI32 PQ208 QL5032 PCI32N AD1892

    ST CHN t4

    Abstract: No abstract text available
    Text: QL5064 QuickPCI Data Sheet •••••• 66 MHz/64-bit PCI Master/Target with Embedded Programmable Logic and Dual Port SRAM Device Highlights High Performance PCI Controller • 64-bit/66 MHz Master/Target PCI Controller automatically backwards compatible to 33 MHz


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    PDF QL5064 Hz/64-bit 64-bit/66 32-bits) 64-bit busses/100 ST CHN t4

    Untitled

    Abstract: No abstract text available
    Text: 78M6610+LMU Energy Measurement Processor for Load Monitoring Units GENERAL DESCRIPTION FEATURES The 78M6610+LMU is an energy measurement processor EMP for load monitoring and control of any 2-wire singlephase or 3-wire split-phase (120/180°) AC circuit. It


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    PDF 78M6610 24-bit

    TC528257

    Abstract: n724
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The


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    PDF TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724

    SF229

    Abstract: toshiba s105
    Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by


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    PDF TC528257 144WORDS SF229 toshiba s105

    TC518129

    Abstract: de interlace
    Text: TOSHIBA TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 8 1 2 9 A is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s by 8 bits. The TC 5 18 1 29A utilizes


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    PDF TC518129AP/ASP/AF/AFW-80/10/12 TC518129APL/ASPL/AFL/AFWL30/10/12 TC518129AFTLS0/10/12 TC518129APL/ASPL/AFL/AFWL/AFTL-80/10/12 AO-A16 TC518129 de interlace

    TC518128

    Abstract: tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70
    Text: INTEGRATED TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TC 5 1 8 1 2 8 C P L /C S P L /C F L / CFWL / CFTL - 7 0 , TC 5 1 8 1 2 8 CPL / CSPL / CFL / CFWL / CFTL - 8 0 TC 5 1 8 1 2 8 CPL / C S PL/ CFL / CFWL / CFTL - 1 0 , TC 5 1 8 1 2 8 CPL/ CSPL / CFL/ CFW L/ CFTL - 7 0 L


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    PDF 072-WORD 18128C 578-bit TC518128CFWL-70, TC518128CFWL-80, TC518128CFWL-10, TC518128CPL-- TC518128 tc518128cfl80 TC518128CFL-80 cfl circuit diagrams TC518128CFL-70

    518128

    Abstract: 518128apl TC518128
    Text: TOSHIBA TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 1 2 8 A -L V is a 1M bit high speed C M O S p se udo static R AM organized as 131,07 2 w o rd s b y 8 bits. The T C 5 1 8 1 2 8 A -L V


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    PDF TC518128APL/AFL/AFWL-80LV/10LV/12LV TC518128AFTLS0LV/10LV/12LV 518128APLyAFL/AFW L/AFTL-80LV/1 OLV/12LV 518128APL/AFL/AFW L/AFTL-80LV/1O LV/12LV 2SA1015 518128 518128apl TC518128

    TC524258

    Abstract: TC524259BJ C69 WML dsf03
    Text: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B


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    PDF 144WORDS TC524259B TC524259B 144-words 512-words TC524258B C-112 TC524258 TC524259BJ C69 WML dsf03

    7c251

    Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
    Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed


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    PDF CY7C251 CY7C254 7C251) 300-mil 600-mil CY7C254 384-word Y7C251 7c251 a1s smd smd code A1s smd diode code A1s 65WMB

    Untitled

    Abstract: No abstract text available
    Text: High Performance 128Kx8 C M O S SRAM p i AS7C1024 AS7C1024L 128Kx8 CM O S S RAM Common I/O FEATURES • Organization: 131,072 words x 8 bits • Equal access and cycle times • High speed • Easy memory expansion with CE1, CE2, OE inputs - 10/12/15/20/25/35 ns address access time


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    PDF 128Kx8 AS7C1024 AS7C1024L 128Kx8 32-pin 7C256 7C512

    Untitled

    Abstract: No abstract text available
    Text: March 1994 PRELIMINARY DATA SHEET_ M 65608 128 K x 8 ULTIMATE CMOS SRAM FEATURES . ACCESS TIME: COMMERCIAL: 25/30/35/45 ns INDUSTRIAL AND MILITARY: 25 * /30/35/45 ns . VERY LOW POWER CONSUMPTION ACTIVE: 250 mW (typ) STANDBY: 1 pW (typ)


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    star tracker

    Abstract: No abstract text available
    Text: Other Custom Products FORMAT P IX E L S IZ E ii TYPE FEATURES 512x512 15x15 Full Frame 1024x1024 15x15 Full Frame Standard Catalog Item 2048 x 2048 7.5 X 7.5 Full Frame 2048 x 2048 15x15 Full Frame 4096 x 4096 7.5 x 7.5 Full Frame 4096 x 4096 15x15 Full Frame


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    PDF 512x512 15x15 1024x1024 12x12 800x800 star tracker

    Untitled

    Abstract: No abstract text available
    Text: TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L SILICON GATE CMOS P R E L IM IN A R Y 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The T C 5 1 8 1 2 9 C is a 1 M bit high speed C M O S pse udo static RAM organized as 131,072 w o rd s by 8 bits. T h e T C 5 1 8 1 2 9 C utilizes


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    PDF TC518129CPL/CFWL/CFIL-70/80/10 TC518129CPL/CFWL/CFIL-70L/80L/10L Q02bbl3

    Untitled

    Abstract: No abstract text available
    Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­


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    PDF CY7C251 CY7C254 7C251) 300-m 600-mil CY7C251 CY7C254 384-word PROMs3802 CY7C254â

    TC524258AZ

    Abstract: No abstract text available
    Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits


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    PDF TC524258AJ/AZ-10 TC524258AJ/ X48ITS TC524253AJ/AZ 144-words 512-words TC524253AJ7 bein51 TC524253AJ TC524258AJ TC524258AZ

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m access m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y


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    PDF TC528257 144WORDS C-231

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED T O SH IB A TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC518128 CPL / CFL / CFWL / CFTL - 70V TC518128 CPL / CFL / CFWL / CFTL -80V TC518128 CPL / CFL / CFWL / CFTL -10V DATA SILICON GATE CMOS 131,072-WORD BY 8-BIT CMOS PSEUDO STATIC RAM


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    PDF TC518128 072-WORD TC518128CPL/CFL/CFWL/CFTL 578-bit OP32-P-525) 1o25iHi| TC518128CFWL