512M NAND FLASH MEMORY Search Results

512Mx8

Contextual Info: MEMORY MODULE FLASH Nand 512Mx8-SOP Flash Memory MODULE 3DFN4G08VS1636 4Gbit Flash Nand organized as 512Mx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8.

3DFN16G08

Abstract: VS464
Contextual Info: MEMORY MODULE FLASH Nand 2Gx8-SOP Flash Memory MODULE 3DFN16G08VS4643 16Gbit Flash Nand organized as 2Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase

Contextual Info: MEMORY MODULE FLASH Nand 4Gx8-SOP Flash Memory MODULE 3D FN32G08VS8633 32Gbit Flash Nand organized as 4Gx8, based on 512MGx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase

Contextual Info: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN8G08VS2635 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase

Contextual Info: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase

Contextual Info: ESMT F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit 512M x 8 1.8V NAND Flash Memory FEATURES Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

two-plane program nand

Contextual Info: ESMT Preliminary Flash F59L4G81A 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes

MX30LF1208AA

Abstract: SLC NAND
Contextual Info: MX30LF1208AA MX30LF1208AA 512M-bit NAND Flash Memory P/N: PM1713 REV. 1.3, DEC. 19, 2013 1 MX30LF1208AA Contents 1.

63-vfbga

Abstract: MX30LF MX30LF1208AA MX30LF1208AA-TI mx30l
Contextual Info: MX30LF1208AA MX30LF1208AA 512M-bit NAND Flash Memory P/N: PM1713 REV. 1.1 AUG. 13, 2012 1 MX30LF1208AA Contents 1.

SLC NAND

Abstract: 63-vfbga SLC NAND endurance 100k years MX30LF1208AA
Contextual Info: MX30LF1208AA MX30LF1208AA 512M-bit NAND Flash Memory REV. 0.03, FEB. 08, 2012 P/N: PM1713 1 MX30LF1208AA Contents 1.

Contextual Info: ESM T Preliminary F59L4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

F59L4G81A

Abstract: F59L two-plane program nand "4bit correction"
Contextual Info: ESMT Preliminary F59L4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 3.3V NAND Flash Memory FEATURES Voltage Supply: 3.3V (2.7V ~ 3.6V) Organization - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase

H27U4G8

Contextual Info: APCPCWM_4828539:WP_0000001WP_000000 APCPCWM_4828539:WP_0000001WP_0000001 1 H27 U_S 4G8_6F2D 4 Gbit (512M x 8 bit) NAND Flash 4Gb NAND FLASH H27U4G8_6F2D H27S4G8_6F2D Rev 1.4 / OCT. 2010 *ba53f20d-240c* 1 B34416/177.179.157.84/2010-10-08 10:08 APCPCWM_4828539:WP_0000001WP_000000

F59D4G81A

Contextual Info: ESMT Preliminary F59D4G81A Operation Temperature Condition -40°C~85°C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

Contextual Info: ESM T Preliminary F59D4G81A Operation Temperature Condition -40 C~85 C Flash 4 Gbit (512M x 8) 1.8V NAND Flash Memory FEATURES         Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit

NAND Flash

Contextual Info: ESMT F59D4G81A / F59D4G161A Flash 4 Gbit 512M x 8 / 256M x 16 1.8V NAND Flash Memory FEATURES       Voltage Supply: 1.8V (1.7V ~ 1.95V) Organization x8: - Memory Cell Array: (512M + 8M) x 8bit - Data Register: (2K + 64) x 8bit x16: - Memory Cell Array: (256M + 4M) x 16bit

SAMSUNG MCP

Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
Contextual Info: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0

K5D1258

Abstract: k5d12 SAMSUNG MCP
Contextual Info: Target MCP MEMORY K5D1258KCM-D075 Document Title Multi-Chip Package MEMORY 512M Bit 64Mx8 Nand Flash / 256M Bit (2Mx32x4Banks) Mobile SDRAM Revision No. History Draft Date Initial issue. - 512Mb NAND B-Die_ Ver 0.1 - 256Mb Mobile SDRAM F-Die_Ver 1.1 March 10, 2005

K9K4G08U0M-YCB0

Abstract: K9K4G16U0M-YCB0 K9K4G16Q0M-YCB0 K9K4G08Q0M-YCB0 K9K4G08U0M
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003

K9K4G08U0M-XIB0

Abstract: K9W8G08U1M-YCB0 48pin-TSOP1 K9K4G08U0M-XCB0 K9K4G08U0M-PCB0 K9K4G08U0M
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

K9XXG08XXM

Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9K4G08Q0M-PCB0 K9K4G16Q0M k9w8g16u1m K9K4G08Q0M K9K4G08U0M K9K4G08U0M-PCB0 K9K4G16U0M K9W8G08U1M
Contextual Info: K9W8G08U1M K9K4G08Q0M K9K4G08U0M K9K4G16Q0M K9K4G16U0M FLASH MEMORY Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package

K9K4G08U0M

Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003

K9K4G08X0M

Abstract: ecc 2112 samsung 8GB Nand flash
Contextual Info: Advance FLASH MEMORY K9K4G08Q0M-YCB0,YIB0 K9K4G16Q0M-YCB0,YIB0 K9K4G08U0M-YCB0,YIB0 K9K4G16U0M-YCB0,YIB0 Document Title 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue Feb. 19. 200 3

SAMSUNG 4gb NAND Flash Qualification Report

Abstract: Samsung K9W8G08U1M K9K4G08U0M-YCB0 K9K4G08U0M-PCB0 K9W8G08U1M K9W8G08U1M-PCB0 May-31 1220AF K9K4G08U0M 48-pin TSOP
Contextual Info: K9W8G08U1M K9K4G08U0M FLASH MEMORY Document Title 512M x 8 Bit / 1G x 8 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Feb. 19. 2003 Advance 0.1 1. Add two-K9K4GXXU0M-YCB0/YIB0 Stacked Package Mar. 31. 2003