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    512K X 4 CMOS Search Results

    512K X 4 CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC74HC14AF Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOP14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHCT541AFT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC14D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation
    74VHC541FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Octal Buffer, TSSOP20B Visit Toshiba Electronic Devices & Storage Corporation
    74HC04D Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, Inverter, SOIC14 Visit Toshiba Electronic Devices & Storage Corporation

    512K X 4 CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2mb 72-pin simm

    Abstract: fr 3709 27A3
    Text:  IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of


    Original     		IDT7MP4135 IDT7MP4135 150ns 72-pin 7MP4135 2mb 72-pin simm fr 3709 27A3 PDF

    fr 3709

    Abstract: fr 3709 z 3709 2mb 72-pin simm
    Text: IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of


    Original     		IDT7MP4135 IDT7MP4135 72-pin 7MP4135 fr 3709 fr 3709 z 3709 2mb 72-pin simm PDF

    fr 3709

    Abstract: fr 3709 z 3709
    Text: IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of four chip select lines provides byte access.


    Original     		IDT7MP4135 IDT7MP4135 150ns 72-pin 7MPV4135 fr 3709 fr 3709 z 3709 PDF

    A43L1632

    Abstract: A43L1632V-6 A43L1632V-7
    Text: A43L1632 Preliminary 512K X 32 Bit X 4 Banks Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue December 28, 2004 Preliminary December, 2004, Version 0.0


    Original     		A43L1632 A43L1632 A43L1632V-6 A43L1632V-7 PDF

    MT46V2M32

    Abstract: No abstract text available
    Text: PRELIMINARY 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW)


    Original     		MT46V2M32V1- MT46V2M32 100-Pin 2M32DDR-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L1632A Preliminary 512K X 32 Bit X 4 Banks Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue March 21, 2007 Preliminary 0.1 Add part numbering scheme February 19, 2008 Rev. No.


    Original     		A43L1632A PDF

    Untitled

    Abstract: No abstract text available
    Text: A43P16321 Preliminary 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Initial issue February 25, 2002 February, 2002, Version 0.0


    Original     		A43P16321 PDF

    8X13

    Abstract: CBB Capacitor Selection Guide
    Text: A43E16321 Preliminary 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue March 21, 2007 Preliminary 0.1 Add part numbering scheme


    Original     		A43E16321 105MHz 133MHz MO-205. 8X13 CBB Capacitor Selection Guide PDF

    Untitled

    Abstract: No abstract text available
    Text: A43E16321 Preliminary 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Low Power Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue March 21, 2007 Preliminary 0.1 Add part numbering scheme


    Original     		A43E16321 105MHz 133MHz MO-205. PDF

    MT48LCM32B2

    Abstract: MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive
    Text: Preliminary‡ 64Mb: x32 Automotive SDRAM Features Automotive SDR SDRAM MT48LC2M32B2 – 512K x 32 x 4 Banks Features Options Marking • Configuration – 2 Meg x 32 512K x 32 x 4 banks • Plastic package – OCPL on page – 86-pin TSOP II (400 mil) standard


    Original     		MT48LC2M32B2 PC100-compliant 4096-cycle, 09005aef811ce1fe) 09005aef84d5580d MT48LCM32B2 MT48LC2M3B2b5 MT48LCM32B2P MT48LCM32 Micron Technology automotive PDF

    IDT7MB4048

    Abstract: 2675 7MB4048
    Text: IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Fast access time: 25ns (max.) Surface mounted plastic packages on a 32-pin, 600 mil FR-4 DIP substrate


    Original     		IDT7MB4048 32-pin, IDT7MB4048 32-pin 7MB4048 2675 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L1632A Preliminary 512K X 32 Bit X 4 Banks Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue March 21, 2007 Preliminary March, 2007, Version 0.0 AMIC Technology, Corp.


    Original     		A43L1632A 166MHz 143MHane PDF

    ADQ24

    Abstract: 8X13
    Text: A43L1632A Preliminary 512K X 32 Bit X 4 Banks Synchronous DRAM Document Title 512K X 32 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue March 21, 2007 Preliminary 0.1 Add part numbering scheme February 19, 2008 Rev. No.


    Original     		A43L1632A ADQ24 8X13 PDF

    MT46V2M32

    Abstract: No abstract text available
    Text: 64Mb: x32 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V2M32V1- 512K x 32 x 4 banks MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES PIN ASSIGNMENT (TOP VIEW) 100-Pin TQFP


    Original     		MT46V2M32V1- MT46V2M32 100-Pin 2M32DDR-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4 MEGABIT 512K x 8 CMOS STATIC RAM PLASTIC SIP MODULE IDT7MP4008S FEATURES: DESCRIPTION: • High-density 4 megabit (512K x 8) CMOS static RAM module The IDT7MP4008 is a 4 megabit (512K x 8-bit) high-speed static RAM module constructed on an epoxy laminate surface using six­


    OCR Scan     		IDT7MP4008S IDT7MP4008 IDT71256 36-pin 7MP4008 7MP4008 512Kx PDF

    fr 3709 z

    Abstract: No abstract text available
    Text: IDT7MP4135 PRELIMINARY 512K x 32 CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES DESCRIPTION • • • • The IDT7MP4135 is a 512K x 32 Static RAM module constructed on an epoxy laminate FR-4 substrate using 4 512K x 8 Static RAMs in plastic packages. The availability of


    OCR Scan     		IDT7MP4135 IDT7MP4135 ThelDT7MP4135 72-pin 7MP4135 2S771 0D223Ã fr 3709 z PDF

    7M4048

    Abstract: IDT7M4048
    Text: bflE •I 4325771 0014401 3t,T IDTIDT7M4048 IDT7MB4048 512K x 8 CMOS STATIC RAM MODULE INTEGRATED DEVICE. FEATURES: DESCRIPTION: • High-density 4-megabit 512K x 8 Static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 Static RAMs


    OCR Scan     		IDTIDT7M4048 IDT7MB4048 110mA 400pA 250pA 32-pin, IDT7M4048/7MB4048 IDT7M4048, IDT7MB4048 7M4048 IDT7M4048 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE In teg rated Device T echnology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs


    OCR Scan     		IDT7M4048 IDT7MB4048 250nA 32-pin, IDT7M4048/7MB4048 7M4048LxxN 7MB4048SxxP PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT7M4048 IDT7MB4048 512K x 8 BiCMOS/CMOS STATIC RAM MODULE Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High density 4 megabit 512K x 8 static RAM module • Equivalent to the JEDEC standard for future monolithic 512K x 8 static RAMs • Fast access time: 15ns (max.)


    OCR Scan     		IDT7M4048 IDT7MB4048 400jiA 32-pin, IDT7M4048/7MB4048 7MB4048SXXP PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI EDI7F32512CA • afCÎROMC K 9GN5 NC. The EDI7F32512, EDI7F232512and EDI7F432512 are orga­ nized as 512K x 32 and 2 x 512Kx32 and 4 x 512K x 32 respectively. The modules are based on ATMEL AT29C040A 512K x 8 Flash devices in TSOP packages which are mounted


    OCR Scan     		ECH7F32512CA-BNC 512Kx32-a0phSMM EDI7F32512CA 512Kx32 EDI7F32512, EDI7F232512and EDI7F432512 512Kx32 AT29C040A EDI7F432512CA100BNC PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K


    OCR Scan     		MS6M8512 PID041 PDF

    IC 2822

    Abstract: IDT7M4048 7M40 ex 2822 cs107
    Text: 512K x 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CMOS Static RAM module constructed on a co-fired ceramic substrate


    OCR Scan     		IDT7M4048 32pin, IDT7M4048 32-pin MIL-STD-883, 7M4048 00212b] IC 2822 7M40 ex 2822 cs107 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH53H4000/ LH53H4100 FEATURES • CMOS 4M 512K x 8 / 256K x 16 High-Speed Mask-Programmable ROM CMOS 4M (512K x 8) High-Speed Mask-Programmable ROM • Packages: L H 53H 4000 L H 53H 4000 5 2 4 .2 8 8 x 8 / 2 6 2 ,1 4 4 x 16 bit 40-pin, 600-m il DIP


    OCR Scan     		LH53H4000/ LH53H4100 40-pin, 600-m 525-m 48-pin, 32-pin, PDF

    L1122

    Abstract: No abstract text available
    Text: 512K X 8 CMOS STATIC RAM MODULE IDT7M4048 Integrated Device Technology, inc. FEATURES: DESCRIPTION: • High-density 4 megabit CMOS Static RAM module The IDT7M4048 is a 4 megabit 512K x 8 CM OS Static RAM module constructed on a co-fired ceramic substrate


    OCR Scan     		IDT7M4048 32-pin, 32-pin 0021Bb0 L-STD-883, 7M4048 L1122 PDF