512 X 8-BIT CMOS EEPROM Search Results

Contextual Info: SEC fiPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /iPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

nec d28c04

Contextual Info: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

6023B

Abstract: PD28C04 ho27a
Contextual Info: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga­ nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power

INF8594E

Abstract: INF8594E-2
Contextual Info: ICs for TV-SETS INF8594E 512 x 8-Bit CMOS EEPROM with I2C-Bus Interface The INF8594E-2 is a 4-Kbit 512 x 8-bit floating gate electrically erasable programmable read only memory (EEPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically

x2004

Abstract: XICOR x2004 X20C04
Contextual Info: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to

XICOR x2004

Abstract: X2004 X20C04
Contextual Info: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to

X24C04

Abstract: X24C16 X4043 X24C04-2
Contextual Info: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply versions • Low power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally organized 512 x 8

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS

93C76

Abstract: 200B 93C86 BSY29
Contextual Info: 93C76/86 8K/16K 5.0V CMOS Serial EEPROM FEATURES PIN CONFIGURATION • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 93C76 2048 x 8 or 1024 x 16 bit organization (93C86)

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS

X24C04 DATASHEET

Abstract: X24C04 X4043
Contextual Info: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply versions • Low power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally organized 512 x 8

Contextual Info: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V Power Supply Versions • Low Power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally Organized 512 x 8

KKF8594E

Contextual Info: TECHNICAL DATA KKF8594E 512 x 8-bit CMOS EEPROMS with I2Cbus Interface The KKF8594E is а 4-Kbit 512 х 8-bit floating gate electrically erasable programmable read only memory (ЕЕРPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically

M41000000G

Abstract: AMD K7 data sheet
Contextual Info: PRELIMINARY Am41DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

Contextual Info: Recommend System Management Alternative: X5043 X25040 4K 512 x 8 Bit SPI Serial EEPROM with Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 512 X 8 bits —16-byte page mode • Low power CMOS —10µA standby current

sck 084

Abstract: X25040 X5043
Contextual Info: Recommend System Management Alternative: X5043 X25040 4K 512 x 8 Bit SPI Serial EEPROM with Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 512 X 8 bits —16-byte page mode • Low power CMOS —10µA standby current

Contextual Info: PRELIMINARY Am41DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

Contextual Info: PRELIMINARY Am45DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

M450000008

Contextual Info: PRELIMINARY Am45DL3208G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

sck 084

Abstract: X25040 X5043
Contextual Info: Recommend System Management Alternative: X5043 X25040 4K 512 x 8 Bit SPI Serial EEPROM with Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 512 X 8 bits —16-byte page mode • Low power CMOS —10µA standby current

M45000001D

Abstract: DL322 DL323 DL324
Contextual Info: PRELIMINARY Am45DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

8 pin diagram 25032

Abstract: DS42585 pin diagram 25032 internal diagram 25032
Contextual Info: PRELIMINARY DS42585 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features