5116 RAM Search Results

5116 RAM Result Highlights (5)

Part	Manufacturer	Description
MD2114A/BVA	Rochester Electronics LLC	STATIC RAM; 1K X 4
27S13A/BEA	Rochester Electronics LLC	27S13A - 2048-Bit (512X4) Bipolar RAM
CDP1824CD/B	Rochester Electronics LLC	CDP1824C - 32-Word x 8-Bit Static RAM
CY7C09389V-9AXI	Rochester Electronics	CY7C09389 - 3.3 V 64 K X 18 Synchronous Dual-Port Static RAM, Industrial Temp
MC68A02CL	Rochester Electronics LLC	MC68A02 - Microprocessor With Clock and Oprtional RAM

5116 RAM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5116 ram Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70 Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature	Original	PDF	16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
5116 ram Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70 Text: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature	Original	PDF	16-Bit HYB5116165BSJ HYB5118165BSJ HYB5118165BSJ-50) HYB5118165BSJ-60) HYB51181 165BSJ-50/-60/-70 16-EDO P-SOJ-42 5116 ram HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
WCs MARKING Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400 Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation	Original	PDF	5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 WCs MARKING SMD MARKING code ASC SMD MARKING CODE RAC 5117400
SPT0305 Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature	Original	PDF	5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ-50/-60 405BJ/BT P-TSOPII-26/24-1 GPX05857 SPT0305 Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
5117405 Abstract: smd code Wl3 5117405BJ-60 Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature	Original	PDF	HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB53 HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) 5117405 smd code Wl3 5117405BJ-60
GR281 Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116 Text: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.	Original	PDF	GR281 GR281 2000/95/EC 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
5117405 Abstract: No abstract text available Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature	Original	PDF	HYB5116405BJ/BT HYB5117405BJ/BT HYB5116405BJ/BT-50) HYB5116405BJ/BT-60) HYB5116 405BJ/BT-50/-60/-70 GPJ05628 P-TSOPII-26/24 300mil) GPX05857 5117405
5268A Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%	OCR Scan	PDF	5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN
5116165 Abstract: 5118165 EDO DRAM Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C	OCR Scan	PDF	16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-70) 5116165BSJ-50) 5116165BSJ-60) 165BSJ-50/-60/-70 5116165 5118165 EDO DRAM
Untitled Abstract: No abstract text available Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature	OCR Scan	PDF	5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 -5J-26/24-1 300mil) 405BJ-50/-60 405BJ/BT
bt 33 f Abstract: No abstract text available Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature •	OCR Scan	PDF	5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 bt 33 f
Untitled Abstract: No abstract text available Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time	OCR Scan	PDF	16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-7EDO E35hQ5 165BSJ-50/-60/-70 16-EDO
Untitled Abstract: No abstract text available Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C	OCR Scan	PDF	5116405BJ 5117405BJ 5116405BJ-50) 5116405BJ-60) 5116405BJ-70) fi23Sb05 405BJ-50/-60/-70 P-SOJ-26/24 BI24X A535b05
5116 RAM Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60 Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)	OCR Scan	PDF	16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yÃ 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60

5117405BJ-50 Abstract: No abstract text available Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature	OCR Scan	PDF	5116405BJ-50/-60 5117405BJ-50/-60 3116405BJ/BT 3117405BJ/BT-50/-60 405BJ/BT 405BJ-50/-60 GPX05857 5117405BJ-50
Untitled Abstract: No abstract text available Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )	OCR Scan	PDF	16-Bit Y//77777/
Untitled Abstract: No abstract text available Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)	OCR Scan	PDF	HYB3116165BSJ-60) HYB3116165BSJ-70) HYB5118165BSJ HYB5116165BSJ 35b05 DG71b30
Untitled Abstract: No abstract text available Text: LH5116/H CMOS 16K 2K x 8 Static RAM FEATURES DESCRIPTION • 2,048 x 8 bit organization The LH5116/H are static RAMs organized as2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (tee).	OCR Scan	PDF	LH5116/H LH5116/H 24-PIN Three-sP-0600) 24-pin, 300-mil DIP024-P-0300)
0450B Abstract: 5116d Text: LH5116/H CMOS 16K 2K X 8 Static RAM FEATURES DESCRIPTION • 2,048 The LH5116/H are static RAMs organized as 2,048 x 8 bits. It is fabricated using silicon-gate CMOS process technology. It features high speed access in read mode using output enable (t0E).	OCR Scan	PDF	LH5116/H LH5116H: 24-pin, 600-mil 300-mil 450-mil LH5116/H 24-PIN 0450B 5116d
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5 116400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5116400 is OKI's CMOS silicon gate process technology.	OCR Scan	PDF	304-Word MSM5116400 cycles/64m QG1733S MSM5116400 GG1733b
organizational structure samsung Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116	OCR Scan	PDF	LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
BT 804 Abstract: No abstract text available Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13	OCR Scan	PDF	32-Bit B166-H6993-X-7600, BT 804
7805B Abstract: hyb 511 Text: SIEM ENS Contents Page In tr o d u c tio n . 8 S u m m a ry o f T y p e s incl. ordering c o d e s . 9	OCR Scan	PDF

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5116 RAM Search Results

5116 RAM Result Highlights (5)

5116 RAM Datasheets Context Search

5116 ram

5116 ram

WCs MARKING

SPT0305

5117405

GR281

5117405

5268A

5116165

Untitled

bt 33 f

Untitled

Untitled

5116 RAM

5117405BJ-50

Untitled

Untitled

Untitled

Untitled

0450B

Untitled

organizational structure samsung

BT 804

7805B