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Tempo Communications Inc 0151-09CD PLIERS FLAT NOSE 9.38"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0151-09CD	Bulk	1		1	1 $47.55 10 $47.55 100 $47.55 1000 $47.55 10000 $47.55	Buy Now
Texas Instruments PT5109CT DC DC CONVERTER 5.6V 5W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PT5109CT	Reel			200	1 - 10 - 100 - 1000 $10.8794 10000 $10.8794	Buy Now
Tempo Communications Inc 0151-09CM PLIERS FLAT NOSE 9.38"
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0151-09CM	Bulk			1	1 $51.9 10 $51.9 100 $51.9 1000 $51.9 10000 $51.9	Buy Now
HellermannTyton MSMP5-109C2 CABLE TIE HLDR MULT SCREW #10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MSMP5-109C2	Bag			100	1 - 10 - 100 $2.02 1000 $2.02 10000 $2.02	Buy Now
Newark	MSMP5-109C2	Pack			1	1 $258.28 10 $183.52 100 $158.6 1000 $158.6 10000 $158.6	Buy Now
Central Semiconductor Corp CP229-2N5109-CT RF TRANS NPN 20V 1.2GHZ DIE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CP229-2N5109-CT	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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5109C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 5109C Linear ICs Analog Multiplier/Squarer status Military/High-RelN Maximum Frequency Hz 5.0M Nom. Supp (V)30 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)65 Package StyleN/A Mounting StylePinout Equivalence CodeN/A # PinsN/A Ckt. (Pinout) Number	Original	5109C	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFC16N50P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings	Original	IXFC16N50P 200ns 220TM E153432 16N50P 5J-745 5-1-09-C	PDF
Contextual Info: PolarHTTM Power MOSFET VDSS ID25 I XTA16N50P IXTP16N50P IXTQ16N50P RDS on = = ≤ 500V 16A Ω 400mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions (TAB) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	XTA16N50P IXTP16N50P IXTQ16N50P O-263 16N50P 5J-745 5-1-09-C	PDF
Contextual Info: PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFA16N50P IXFP16N50P IXFH16N50P = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions	Original	IXFA16N50P IXFP16N50P IXFH16N50P 200ns O-263 O-220AB 16N50P 5J-745 5-1-09-C	PDF
IXFC16N50P Abstract: 16n50 16N50P F16N f16n50 Contextual Info: IXFC16N50P PolarHVTM HiPerFET Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 500V 10A Ω 450mΩ 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISOPLUS 220TM E153432 Symbol Test Conditions Maximum Ratings	Original	IXFC16N50P 200ns 220TM E153432 16N50P 5J-745 5-1-09-C IXFC16N50P 16n50 F16N f16n50	PDF
IXTP16N50P Abstract: IXTA16N50P 16N50 IXTQ16N50P 16N50P 500V N-Channel MOSFET TO-3P 5109C Contextual Info: I XTA16N50P PolarHTTM Power MOSFET VDSS ID25 IXTP16N50P IXTQ16N50P RDS on = = ≤ 500V 16A Ω 400mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	XTA16N50P IXTP16N50P IXTQ16N50P O-263 16N50P 5J-745 5-1-09-C IXTP16N50P IXTA16N50P 16N50 IXTQ16N50P 500V N-Channel MOSFET TO-3P 5109C	PDF
IXFH16N50P Abstract: IXFA16N50P IXFP16N50P Z 728 Contextual Info: IXFA16N50P IXFP16N50P IXFH16N50P PolarTM HiperFETTM Power MOSFET VDSS ID25 = 500V = 16A Ω ≤ 400mΩ ≤ 200ns RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXFA) G S D (Tab) TO-220AB (IXFP) Symbol Test Conditions	Original	IXFA16N50P IXFP16N50P IXFH16N50P 200ns O-263 O-220AB O-247 16N50P 5J-745 5-1-09-C IXFH16N50P Z 728	PDF
16N50 Abstract: 16N50P IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation Contextual Info: IXFA16N50P IXFP16N50P IXFH16N50P PolarHVTM HiperFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500V = 16A Ω ≤ 400mΩ ≤ 200ns TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS	Original	IXFA16N50P IXFP16N50P IXFH16N50P 200ns O-263 O-220 O-24icoFarads 16N50P 5J-745 16N50 IXFA16N50P IXFH16N50P IXFP16N50P IXYS Corporation	PDF