5101 STATIC RAM Search Results

HM435101

Abstract: JVC DR -E2LBK s5101* ami HM43 ram 5101 MCM5101 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: M O TO R O LA 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f CM O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-volt supp ly. The C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101 sram

Abstract: HM435101 ic 5101 ram HM435101 sram CM5101 HM43 3D03 SO65 MCM5101-65
Contextual Info: MOTOROLA MCM5101 MCM51LOI 256 x 4 BIT STATIC RAM CMOS The M CM 5101 fa m ily o f C M O S R A M s o ffe rs ultra lo w p o w e r and fu l­ ly sta tic ope ration w ith a single 5-v o lt supp ly. T he C M O S 1024-bit devices are organized in 256 w o rd s by 4 bits. Separate data in p u ts and

5101ab

Abstract: ic 5101 ram 5101 cmos ram L21S
Contextual Info: in t e i M5101-4, M5101L-4 256 x 4 BIT STATIC CMOS RAM Single +5V Power Supply Military Temperature Range: -55° C to +125° C Ultra Low Standby Current: 200nA/Bit C E 2 Controls Unconditional Standby Mode Fast Access Time — 800ns Three-State Output T h e Intel M 5101 is an u ltra -lo w p o w er 2 5 6 X 4 C M O S R A M sp e cifie d over th e - 5 5 ° C to + 1 2 5 °C tem p e ra tu re range. T h e R A M

5101 RAM

Abstract: intel 2101 Static RAM
Contextual Info: intei P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) 5101L 5101L-1 5101L-3 0.14 0.14 0.70 • Single +5V Power Supply ■ Ideal for Battery Operation (5101L) 0.2 0.2 1.0 RAM 5101 FAMILY x 256 x 4 BIT STATIQXMOSjRAM Max Access (ns) 650 450 650 ■ Directly TTL Compatible:

5101 RAM

Abstract: Intel 4289 CD4011AE Intel mcs-40 intel 4002 intel 2101 Static RAM MCS 4040 ttl 7404 draw pin configuration of ic 7404 4011AE
Contextual Info: irrte1 « In te l C o rp o ra tio n 1975 APPLICATION NOTE AP-12 Contents Designing Non-Volatile Memory Systems with Inters 5101 RAM IN T R O D U C T IO N . 1 D E V IC E D E S C R IP T IO N .

5101 RAM

Abstract: ram 5101 intel 5101 intel 2101 5101L ram 5101L-1 intel 2101 Static RAM 5101L-3 5101 intel 5101L
Contextual Info: intei 5101 FAMILY ^ 256 x 4 BIT STATIQX M O S jR A M P/N Typ. Current @ 2V Typ. Current @ 5V PA (HA) Max Access (ns) 0.14 0.2 0.2 1.0 650 450 650 5101L 5101L-1 5101L-3 0.14 0.70 •Single +5V Power Supply ■ Ideal for Battery Operation (5101L) ■ Directly TTL Compatible:

ic 5101 ram

Abstract: 5101 RAM LH5101 LH5101-30 5101 cmos ram intel 5101 1K x 8 static ram 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 4 Static RAM x FEATURES DESCRIPTION • 256 • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Standby: 10 (.tA x

LH5101

Abstract: LH5101-30 intel 5101 5101 static ram
Contextual Info: LH5101 CMOS 1K 256 x 4 Static RAM FEATURES DESCRIPTION • 256 x 4 bit organization • Access time: 300 ns (MAX.) The LH5101 is a static RAM organized as 256 x 4 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption:

Intel mcs-40

Abstract: intel 1101 2116 ram 5101 RAM transistor equivalenti Bipolar PROM programming Creative IC CT 1975 intel 3601 1702a eprom MCS-40
Contextual Info: PRIC E 15 00 memory design handbook m in ia i O k p a r » lio n 1 0 7 7 INTRODUCTION The Intel Memory Design Handbook contains information on the use of Intel’s memory components and support circuits in system application. It is intended to aid the system designer to gain a thorough

Contextual Info: In t e l M5101-4, M5101L-4 256 X 4 BIT STATIC CMOS RAM • Military Temperature Range: -5 5 °C to +125°C Single +5V Power Supply ■ Ultra Low Standby Current: 200nA/Bit CE 2 Controls Unconditional Standby Mode ■ Fast Access Time — 800ns Three-State Output

HM435101

Abstract: MCM5101 intel 5101 MCM51L01C45 S5101 HM43 HM6501 MCM5101C65 MCM5101C80 MCM51L01
Contextual Info: 8 < > MOTOROLA MCM5101 MCM51L01 256x4 BIT STATIC RAM CMOS The MCM5101 fam ily o f CMOS RAMs offers ultra low power and ful­ ly static operation w ith a single 5-volt supply. The CMOS 1024-bit devices are organized in 256 words by 4 bits. Separate data inputs and

saa6000

Abstract: 65536 page mode dynamic ITT4164 ITT5101S
Contextual Info: MOS MEMORIES ITT4164 65536-Bit Dynamic Random Access Memory Industry-Standard 16-Pin DIP Features 150 ns access time (ITT4164-15) 200 ns access time (ITT4164-20) All inputs including clocks are TTL compatible Standard power supply + 5 V, ±10% Three state TTL compatible output, Data out is not latched

5101-4

Abstract: 2101 256x4
Contextual Info: g g g # 8 8 3 /5 1 0 1 -4 256x4 Static CMOS RAM s c ie n tific Features Pin Configuration • Military Temperature Range: - 5 5 ° C t o + 125°C A3 I 1' ■ Low Power Replacement for 2101 NMOS RAMs a ■ Data retention to 2.0V ■ TrueTTL C om patibility

HM435101

Abstract: L0145 D11-CR HM43 MCM5101 ram 5101 s5101* ami D11/CR HM6501 MCM5101C65
Contextual Info: r> • r . @ M O T O R O L A \ > >.\ 0 u MCM5101 MCM51L01 2 5 6 x4 BIT STATIC RAM CMOS T h e M C M 5 1 0 1 fa m ily o f C M O S R A M s o ffe r s u ltra lo w p o w e r a n d f u l­ ly s ta tic o p e ra tio n w it h a s in g le 5 -v o lt s u p p ly . T h e C M O S 1 0 2 4 -b it

Heat Volume Counter MSP430

Abstract: tss721 msp430 TSS721 MSP430 Manual MSP430 MSP430C336 MSP430 General Purpose Subroutines zener diode 4148 code "pocket Scale" "gas Sensor"
Contextual Info: MSP430 Family Mixed-Signal Microcontroller Application Reports Author: Lutz Bierl Literature Number: SLAA024 January 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

RR-63

Contextual Info: inteT RELIABILITY REPORT RR-63 August 1989 4 Static RAM Reliability Report MADHU NIMGAONKAR COMPONENTS CONTRACTING DIVISION QUALITY AND RELIABILITY ENGINEERING Order Number: 240544-001 4-63 SRAM RELIABILITY DATA SUMMARY CONTENTS PAGE 1.0 IN T R O D U C T IO N .4-65

Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 62963 Product Preview 4 K x 1 0 B it S ynchronous S ta tic R A M with Output Registers The MCM62963 is a 40,960 bit synchronous static random access memory organized as >1096 words of 10 bits, fabricated using Motorola's second-generation high-performance

msp430 TSS721

Abstract: tss721 MSP430 169 Heat Volume Counter MSP430 MSP430 MSP430C336 EEPROM coding MSP430 General Purpose Subroutines ferra msp430 hall
Contextual Info: MSP430 Family Mixed-Signal Microcontroller Application Reports Author: Lutz Bierl Literature Number: SLAA024 November 1999 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue

47C400

Abstract: TMP47C423AF lg lcd monitor circuit diagram QFP64 Display 7 segment sec 5101 8 pin configuration LCD 5110 Display 7 segment sec 5101
Contextual Info: TO SH IBA TMP47C423A CMOS 4-BIT MICROCONTROLLER TMP47C423AF The 47C423A is a high speed and high performance 4-bit single chip microcomputer based on the TLCS-47 CMOS series with LCD driver, High Speed Event Counter and Pulse output circuit. PART No. ROM RAM

cs 2648

Abstract: lu 7821 PCF29F64 PCX8582 IE2K MC0272 PCF29F64P PCF29F64T S028 B1070
Contextual Info: 10 I»*-' INTEGRATED CIRCUITS PCF29F64 8 K x 8-bit static CMOS EEPROM with PAG E-ERASE option Preliminary specification File under Integrated Circuits, IC10 January 1993 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors Preliminary specification

diagram of 16x32 LED matrix display

Abstract: pin diagram 16x32 LED matrix display led matrix 16X32 16*32 LED Matrix 16x32 red LED 16x32 LED matrix display
Contextual Info: 2001. 2.8 A K T E N TA T IV E LED DOT MATRIX MODULE M ODEL : K L M -9 6 D C A N A U K CORP. 802- 12 Shinheung-Dong, Iksan, Korea TEL : 063 835-7111 FAX : (063) 835-2681 URL : http://ww w.auk.co.kr E -m ail : webmaster@auk.co.kr 2001. 2. 8 2001. 2.8 1. O VE R VIE W

intel 8282

Abstract: INTEL I7 microprocessor circuit diagram pin diagram of ic 8088 2817A 8031 Intel Microprocessor 8088 intel microprocessor pin diagram INTEL 2817a 2817A-2 8088 intel microprocessor circuit diagram intel 2816A
Contextual Info: r a iO M O lM W 2817A 16K 2K x 8 ELECTRICALLY ERASABLE PROM 5 Volt Only Operation • Write Protect Circuit to Preserve Data on Power Up and Power Down On-Chip Latches for Direct Microprocessor Interface ■ 10,000 Erase/Write Cycles per Byte Automatic Byte-Erase-before-Write

8X16

Abstract: KPM-240LAU
Contextual Info: 2002 . 1 . 7 A 0 K T E N TA T IV E LED DOT MATRIX MODULE M ODEL : K P M -2 4 0 L A U 3 Colors LD M for outdoor use A U K CORP. 802- 12 Shinheung-Dong, Iksan, Korea TEL : (063) 835-7111 FAX : (063) 835-2681 URL : http://ww w.auk.co.kr E -m ail : webmaster@auk.co.kr

MCM32100DG60

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM32100D Product Preview D PACKAGE SM ALL O UTLINE DIMM M ODULE CASE 992-01 1M x 32 Bit DRAM Small Outline Memory Module T h e M C M 32100D is a 5 V D RAM sm all outline m em ory m odule SO M M organized as 1,048,576 x 32 bits. The m odule is a JE D E C -standard 72-lead m em ber of th e