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    onsemi NGTB50N60FLWG

    IGBT TRENCH FS 600V 100A TO-247
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    onsemi NGTG50N60FLWG

    IGBT TRENCH 600V 100A TO-247-3
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    Rochester Electronics LLC NGTG50N60FLWG

    IGBT TRENCH 600V 100A TO-247-3
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    onsemi NGTB50N60FL2WG

    IGBT TRENCH FS 600V 100A TO-247
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    50N60FL Datasheets Context Search

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    50N60FL

    Abstract: 50N60
    Text: 50N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTB50N60FLWG NGTB50N60FLW/D 50N60FL 50N60 PDF

    50N60FL

    Abstract: 50n60fl2
    Text: 50N60FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTB50N60FL2WG NGTB50N60FL2W/D 50N60FL 50n60fl2 PDF

    50N60FL

    Abstract: NGTB50N60FLWG 50N60
    Text: 50N60FLWG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.


    Original     		NGTB50N60FLWG NGTB50N60FLW/D 50N60FL 50N60 PDF