IXGK50N60A2D1
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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IXGK50N60A2D1
50N60A2D1
IC110
IF110
50N60B2D1
O-264
PLUS247
405B2
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50n60
Abstract: ixsk50n60au1 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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50N60AU1
O-264
50n60
ixsk50n60au1
50N60AU1
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50N60A
Abstract: IXGH50N60A
Text: HiPerFASTTM IGBT IXGH 50N60A VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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50N60A
50N60A
IXGH50N60A
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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50N60A2U1
ISOPLUS247
E153432
IC110
IF110
50N60A2U1
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60A2D1
IC110
O-264
IF110
50N60B2D1
PLUS247
405B2
50N60A2D1
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mj 340
Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Text: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM
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50N60AU1
O-264
D-68623
mj 340
MJ340
IXSK50N60AU1
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50n60
Abstract: 50N60A IF110 PLUS247
Text: Advance Technical Data IGBT with Diode IXGK 50N60A2D1 VCES IXGX 50N60A2D1 IC25 VCE sat = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES
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50N60A2D1
IC110
IF110
50N60B2D1
O-264
405B2
50N60A2D1
50n60
50N60A
IF110
PLUS247
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50N60A
Abstract: IF110 PLUS247 IXGX50N60A2U1
Text: Advance Technical Information IGBT with Diode IXGK 50N60A2U1 VCES IXGX 50N60A2U1 IC25 VCE sat Low Saturation Voltage IGBT with Low Forward Drop Diode = 600 V = 75 A = 1.6 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C
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50N60A2U1
IC110
IF110
50N60A2D1
50N60A2U1
50N60A
IF110
PLUS247
IXGX50N60A2U1
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931 diode smd
Abstract: 50n60 IXGX50N60AU1 50N60AU1 IXGX50N60AU1S ic 931
Text: Preliminary data HiPerFASTTM IGBT with Diode 50N60AU1 50N60AU1S Combi Pack VCES IC25 VCE sat tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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IXGX50N60AU1
IXGX50N60AU1S
O-247
50N60AU1S)
931 diode smd
50n60
IXGX50N60AU1
50N60AU1
IXGX50N60AU1S
ic 931
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50n60
Abstract: 50N60AU1
Text: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600
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50N60AU1
O-264
50n60
50N60AU1
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IF110
Abstract: ISOPLUS247 IXGR50N60A2U1 IGBT g
Text: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings
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50N60A2U1
IC110
IF110
50N60A2U1
IF110
ISOPLUS247
IXGR50N60A2U1
IGBT g
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Untitled
Abstract: No abstract text available
Text: ! a i x Y S Preliminary data V CES 50N60AU1 50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C
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IXSX50N60AU1
IXSX50N60AU1S
O-247
50N60AU1S)
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50N60A
Abstract: IXGH50N60AS IXGH50N60A
Text: HiPerFAST IGBT IXGH 50N60A IXGH 50N60AS VCES lC26 = 600 V = 75 A V = C E s a „ tfi 2 - 7 V = 275 ns Prelim inary data OE Symbol Test Conditions vt c e s Td = 25°C to 150°C vt c g r Tj V G ES v G EM ^C25 ^C90 ^CM SSOA (RBSOA P c Maximum Ratings 600
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50N60A
50N60AS
O-247
D94006DE,
IXGH50N60AS
IXGH50N60A
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IXGH50N60A
Abstract: 100-200Q IXGH50N60AS
Text: CUXYS HiPerFAST IGBT Surface Mountable IXGH 50N60A IXGH 50N60AS v CES = = = = ^C25 v CE sat 600 V 75 A 2.7 V 275 ns <) Symbol Test Conditions Maximum Ratings VCEs Tj = 25°C to ISO^C 600 V VCGB Tj = 25°C to 150“C; RQE = 1 M n 600 V V GES Continuous
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50N60A
50N60AS
O-247
50N60A)
B2-91
IXGH50N60A
100-200Q
IXGH50N60AS
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Untitled
Abstract: No abstract text available
Text: □ IXYS IXGK 50N60AU1 Hi Per FAST IGBT with Diode V C ES I C 25 VC E sat Combi Pack tn = = = = 600 V 75 A 2.7 V 275 ns ?C G OE Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20
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PDF
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50N60AU1
O-264
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Untitled
Abstract: No abstract text available
Text: D IX Y S IXSX 50N60AU1 IGBT with Diode VCES = 600 V •ca PLUS 247 package = 75A W 2JV Short Circuit S O A Capability Preliminary data Symbol Test Conditions Maximum Ratings VCES T j =25°Cto 150°C 600 V vCQR Tj = 25°Cto 150°C; RG6 = 1 Mi2 600 V VGES
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OCR Scan
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PDF
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247TM
50N60AU1
O-247
PLUS247TM
50N60AU1)
80A/ns
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50N6
Abstract: 50N60A IXGH50N60A
Text: o ix y s HiPerFAST IGBT IXGH 50N60A VCES IC25 V— tfi Surface Mountable = 600 V = 75 A = 2.7 V = 275 ns ÔE Maximum Ratings Symbol Test Conditions V CEs T j = 2 5 °C to 1 5 0 °C 600 V Vce„ T ,J = 2 5 ° C to 15 0 °C; R jfc „ = 1 MQ 600 V v GES Continuous
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50N60A
O-247
50N60A
50N60AU1
50N6
IXGH50N60A
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60N60A
Abstract: c5021-0
Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90
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50N60AU1
O-264
JEDECTO-264AA
100-C
50N60AU1
60N60A
c5021-0
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C8750
Abstract: No abstract text available
Text: m xY S IGBT with Diode IXSK 50N60AU1 VCES I C25 v* CE sat Short Circuit S O A Capability 600 V 75 A 2.7 V ?c G OE Maximum Ratings Symbol Test Conditions VCES T0 = 25° C to 150° C 600 V VCGR Tj = 25° C to 150°C; RGE= 1 Mi2 600 V VGES VGEM Continuous ±20
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50N60AU1
O-264AA
C8750
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Untitled
Abstract: No abstract text available
Text: XYS IGBT with Diode vC E S IXSK 50N60AU1 ^C 25 v C E sat = 600V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES T j = 25°C to 150°C 600 V v CGR T j = 25°C to 150°C; RQE = 1 600 V v GES Continuous ±20 V v GEM
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PDF
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50N60AU1
125-C
O-264
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Untitled
Abstract: No abstract text available
Text: P1XYS HiPerFAST IGBT with Diode IXGK 50N60AU1 v CES ^C25 v ¥ CE sat tfi Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V v COR v GES T, = 25°C to 150°C; RGE = 1 MQ 600 V Continuous ±20 V vyoem T ransient ±30 V ^C25 Tc = 25°C, limited by leads
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50N60AU1
O-264
IXGK56N60AU1
B2-97
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Untitled
Abstract: No abstract text available
Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20
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50N60AU1
25cCto
O-247
50N80AU1
1999IXYS
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50N60
Abstract: 50N6
Text: IGBT with Diode vCES 50N60AU1 50N60AU1S ^C25 v* CE sat PLUS 247 package Short Circuit SOA Capability PLUS 247™ SMD (50N60AU1S) Preliminary data ¿ Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V VC0B Tj = 25°C to 150°C; R ^ = 1 M£2
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247TM
IXSX50N60AU1
IXSX50N60AU1S
50N60AU1S)
O-247
247TM
50N60AU1)
50N60
50N6
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ic tea 1090
Abstract: smd tea 521 27AD
Text: Preliminary data HiPerFAST IGBT with Diode 50N60AU1 50N60AU1S v CES ^C25 v* CE sat % Combi Pack = = = = 600 V 75 A 2.7 V 275 ns T0-247 Hole-less SMD (50N60AU1S) Symbol Test Conditions v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MO
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IXGX50N60AU1
IXGX50N60AU1S
T0-247
50N60AU1S)
O-247
s1997
ic tea 1090
smd tea 521
27AD
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