50N5 Search Results

50n50

Abstract: 55N50 150N50 IXFK55N50
Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR

Contextual Info: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

50N60

Abstract: G 50N60 IXGH50N50B
Contextual Info: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n

ixys ixfn 55n50

Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
Contextual Info: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)

50n50

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW

AWCCA-50N50

Contextual Info: Wireless Charging Coil Assembly AWCCA-50N50 Pb RoHS / RoHS II Compliant 50 x 50mm Moisture Sensitivity Level MSL – MSL = 1 FEATURES: • Wireless Charging Coil for Transmitter or Receiver applications, (6.3 H & 24μH options) • Outline Dimensions: 50mm x 50mm, height options 3.5mm,

Contextual Info: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings

Contextual Info: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

50N60

Abstract: G 50N60 50n60b IXGH50N50B IXGH50N60B
Contextual Info: DIXYS HiPerFAST IGBT V CES IXGH 50N50B IXGH 50N60B 500 V 600 V ^C25 75 A 75 A V CE sat t,i 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2

50n60

Abstract: 50N50B IXGH50N50B IXGH50N60B
Contextual Info: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC

50n50

Contextual Info: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings

ixys ixfn 55n50

Abstract: ixys ixfn55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

fast IXFX

Abstract: ixf55n50 50N50 IXFX55N50 125OC PLUS247TM 55N50
Contextual Info: HiPerFETTM Power MOSFETs VDSS ID25 RDS on 500 V 50 A 100 mΩ Ω Ω 500 V 55 A 80 mΩ trr ≤ 250 ns IXFX 50N50 IXFX 55N50 Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

50n50

Abstract: IXFN55N50 IXFE50N50 IXFE55N50 55n50
Contextual Info: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

50n50

Abstract: IXFK55N50 ISOPLUS247 55n50
Contextual Info: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C

IXFN40N50

Contextual Info: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25

50N50

Abstract: IXFE50N50 IXFE55N50 IXFN55N50
Contextual Info: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

50N60

Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
Contextual Info: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW

55n50

Abstract: ixys ixfn 55n50 IXFK50N50
Contextual Info: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings

50n60

Abstract: G 50N60 50N50B wj 508 50n50 IXGH50N50B IXGH50N60B
Contextual Info: □ IXYS Preliminary data V CES HiPerFAST IGBT Symbol IXGH 50N50B IXGH 50N60B 50N50 50N60 500 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 500 600 V V GES Continuous ±20 V V GEM Transient ±30 V 'c 2 5 Tc = 25°C 75 A 'c 9 0 Tc = 90°C 50 A ' cm Tc = 25°C, 1 ms

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = Rectifier Diode 5500 V 4570 A 7180 A 73•103 A 0.8 V 0.107 m 5SDD 50N5500 Doc. No. 5SYA1169-01 Apr. 13 • Patented free-floating silicon technology  Low on-state and switching losses  Optimum power handling capability

50N60

Abstract: G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B
Contextual Info: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i