50N120 Search Results

50N120 Price and Stock

Filter by Manufacturer


STMicroelectronics SCT50N120 SICFET N-CH 1200V 65A HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCT50N120	Tube	594		1	1 $29.82 10 $29.82 100 $19.411 1000 $29.82 10000 $29.82	Buy Now
Mouser Electronics	SCT50N120		258			1 $26.76 10 $26.72 100 $18.75 1000 $18.75 10000 $18.75	Buy Now
STMicroelectronics	SCT50N120		258		1	1 $26.23 10 $26.19 100 $18.38 1000 $18.38 10000 $18.38	Buy Now
TME	SCT50N120		48		1	1 $38.49 10 $34.74 100 $34.59 1000 $34.59 10000 $34.59	Buy Now
Avnet Silica	SCT50N120		60	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip1Stop	SCT50N120	Tube	642			1 $22.5 10 $22.3 100 $22.2 1000 $22.2 10000 $22.2	Buy Now
EBV Elektronik	SCT50N120			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IKQ50N120CH3XKSA1 IGBT 1200V 100A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKQ50N120CH3XKSA1	Tube	472		1	1 $12.44 10 $12.44 100 $7.50133 1000 $6.125 10000 $6.125	Buy Now
Avnet Americas	IKQ50N120CH3XKSA1	Tube		19 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IKQ50N120CH3XKSA1		281			1 $11.91 10 $11.51 100 $6.36 1000 $6.12 10000 $6.12	Buy Now
Newark	IKQ50N120CH3XKSA1	Bulk	230		1	1 $12.54 10 $11.17 100 $8.01 1000 $7.63 10000 $7.63	Buy Now
TME	IKQ50N120CH3XKSA1				1	1 $10.15 10 $8.8 100 $7.99 1000 $7.99 10000 $7.99	Get Quote

EBV Elektronik	IKQ50N120CH3XKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics SCTWA50N120 SICFET N-CH 1200V 65A HIP247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SCTWA50N120	Tube	378		1	1 $21.8 10 $19.125 100 $19.125 1000 $19.125 10000 $19.125	Buy Now
Avnet Americas	SCTWA50N120	Tube	192	32 Weeks	30	1 - 10 - 100 $19.36709 1000 $19.36709 10000 $19.36709	Buy Now
Newark	SCTWA50N120	Bulk			600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	SCTWA50N120				1	1 $21.12 10 $18.75 100 $18.75 1000 $18.75 10000 $18.75	Buy Now
TME	SCTWA50N120				1	1 $47.12 10 $39.32 100 $35.26 1000 $30.58 10000 $29.65	Get Quote

Avnet Silica	SCTWA50N120		600	17 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	SCTWA50N120			33 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXYH50N120C3D1 IGBT 1200V 90A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH50N120C3D1	Tube	360		1	1 $13.29 10 $13.29 100 $8.56367 1000 $13.29 10000 $13.29	Buy Now
Mouser Electronics	IXYH50N120C3D1		538			1 $13.05 10 $10.84 100 $8.56 1000 $7.91 10000 $7.91	Buy Now
TTI	IXYH50N120C3D1	Tube	300		30	1 - 10 - 100 $10.98 1000 $10.98 10000 $10.98	Buy Now
TME	IXYH50N120C3D1		297		1	1 $13.83 10 $10.92 100 $9.88 1000 $9.88 10000 $9.88	Buy Now
IXYS Corporation IXYH50N120C3 IGBT 1200V 100A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXYH50N120C3	Tube	298		1	1 $11.24 10 $11.24 100 $7.14967 1000 $11.24 10000 $11.24	Buy Now
Mouser Electronics	IXYH50N120C3		240			1 $11.05 10 $10.41 100 $7.15 1000 $6.4 10000 $6.4	Buy Now
TTI	IXYH50N120C3	Tube	300		30	1 - 10 - 100 $8.89 1000 $8.89 10000 $8.89	Buy Now
TME	IXYH50N120C3				1	1 $11.23 10 $8.91 100 $8.01 1000 $8.01 10000 $8.01	Get Quote

Find more 50N120 price and stock on Findchips.com

50N120 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
50N120AU1		IXYS	High Voltage IGBT With Diode, Short Circuit SOA Capability		Original	PDF

50N120 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
50N120D1 Abstract: No abstract text available Text: Advance Technical Information NPT3 High Voltage IGBT with Diode VCES IC25 VCE sat tfi IXEX 50N120D1 Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous	Original	PDF	50N120D1 O-247TM 728B1 123B1 065B1 50N120D1
50N100 Abstract: 50N120 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623 Text: Advanced Technical Information IXRH 50N120 VCES = 1000 / 1200 V IXRH 50N100 IC25 = 60 A IGBT with Reverse Blocking capability VCE sat = 2.5 V tf = 75 ns C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Symbol	Original	PDF	50N120 50N100 O-247 50N120 50N100 IXRH 50N120 bi-directional switches IGBT induction heat resonant D-68623
IXLN50N120A Abstract: No abstract text available Text: IGBT IXLN 50N120A VCES IC25 VCE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data E Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V Transient	Original	PDF	50N120A IXLN50N120A
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXRH 50N60 VCES = 600/1200 V IXRH 50N120 IC90 = 50 A High Voltage RBIGBT Forward and Reverse Blocking IGBT VCE sat = 2.6 V tfi = 300 ns N-Channel, Enhancement Mode C TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Conditions	Original	PDF	50N60 50N120 O-247 D-68623
50N120AU1 Abstract: IXDN 50N120AU1 IXDN50N120AU1 V50017 Text: High Voltage IGBT with Diode IXDN 50N120AU1 C Short Circuit SOA Capability VCES = 1200 V IC25 = 70 A VCE sat typ = 2.5 V G Preliminary Data E E Maximum Ratings miniBLOC, SOT-227 B E153432 Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	50N120AU1 OT-227 E153432 50N120AU1 IXDN 50N120AU1 IXDN50N120AU1 V50017
100N120 Abstract: 25N120 100N-120 150N120 75N120 15N120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352 Text: Chip-Shortform2004.pmd IC TVJM 1200 IXED 15N120 IXED 25N120 IXED 50N120 IXED 75N120 IXED 100N120 IXED 50N120 1700 IXED 75N170 IXED 100N170 °C 150 Eoff Eon inductive load TVJ = 125°C Qg on Internal Gate Sithickn. A A mm • • • • • • 20 25 50	Original	PDF	15N120 25N120 50N120 75N120 100N120 150N120 75N170 100N170 100N-120 IC IGBT 25N120 100N170 IC IGBT 15N120 mj 1352
40N120 Abstract: IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623 Text: IXRH 40N120 Advanced Technical Information VCES = 1200 V IC25 = 55 A VCE sat = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E G = Gate, E = Emitter, C = Collector, TAB = Collector Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings	Original	PDF	40N120 O-247 40N120 IXRH 50N120 40N120 DATASHEET 50N120 bi-directional switches IGBT induction heating D-68623
Untitled Abstract: No abstract text available Text: 50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB50N120FL2WG NGTB50N120FL2W/D
Untitled Abstract: No abstract text available Text: 50N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited	Original	PDF	NGTB50N120FL2WG NGTB50N120FL2W/D
Untitled Abstract: No abstract text available Text: r IXLN 50N120A IGBT VCES I C25 V CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability ?c G r 1 c m 1 mi ic u y u c u a È T ' e Maximum Ratings Symbol Test Conditions V CES Tj V CGR T, = 25°C to 150°C; RGE = 1 M ii V GES 1200 V 1200 V Continuous	OCR Scan	PDF	50N120A 4bab22b
IXLN50N120A Abstract: No abstract text available Text: OIXYS IGBT IXLN 50N120A v¥ ces ^C25 vv CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability Preliminary data ° Symbol Test C onditions Maximum Ratings v CES ^ V CGR T,J = 25°C to 150°C; Rrc = 1 M ii Cat V GES 1200 V 1200 V Continuous +20 V	OCR Scan	PDF	50N120A OT-227 IXLN50N120A
jvv diode Abstract: IXDN 50N120AU1 50N120AU1 IXDN50N120AU1 0504N Text: □ IXYS High Voltage IGBT with Diode IXDN 50N120AU1 V CES 1200 V ^C25 70 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 1200 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	50N120AU1 OT-227 jvv diode IXDN 50N120AU1 IXDN50N120AU1 0504N
M232 Abstract: QGQ505L pu200 Rg241 Text: 2 Pack IGBT 2im 50N-120 S älL e IGBT MODULE N series -gv* n Outline Drawing n Features •S q u a re R BSO A • L o w S aturation Voltage •L e s s Total P o w e r D issip atio n •Im p ro v e d FW D C ha ra cte ristic •M in im iz e d in te rn a l S tra y In du cta nce	OCR Scan	PDF	125-C Eoff25 D-60528 M232 QGQ505L pu200 Rg241
IXBH 40N160 Abstract: 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1 Text: NPT Insulated Gate Bipolar Transistors IGBT D series (SCSOA) V T = 1 5 0 °C ► New V ► IXDP 20N60B 600 v CE(aal) c lM typ. typ. Tc - 25°C Tc = 90°C A A ► IXDP 35N60B ► IXDH 35N60B ► IXDA 20N120A 'c •c CES PF 21 2.0 800 58 40 2.0 ^ 1600 □	OCR Scan	PDF	20N60B 35N60B 20N120A 20N120 30N120 75N120A T0-220 9N140 9N160 IXBH 40N160 20N120D1 Insulated Gate Bipolar Transistors 55N120D1 20N120A 20N60BD1 9N140 ixbh9n160 30N120 35N60BD1

1V110 Abstract: inverter P VnF-10 Text: 7 in 1 IGBT 1200 V 50 A F U JI SUM öTGSOE IGBT MODULE N series n Features • Including Brake Chopper n Absolute Maximum Ratings ( t c=2 5 °c) Items Collector-Em itter Voltage Gate -E m itter Voltage (1) r 0» > n Outline Drawing Symbols V g es lc Collector Current	OCR Scan	PDF	tp125 Tp125Â 1V110 inverter P VnF-10
8n80 Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1	OCR Scan	PDF	CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
40N60A Abstract: G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A Text: Insulated Gate Bipolar Transistors IGBT "S" and "L" series with improved SCSOA capability Type Tjm = 150 C ► New ► IXSP 2N100 IXSH 30N60 IXSH 40N60 IXSH 25N100 IXSH 45N100 IXSH 45N120 IXSP 2N100A ► IXSH 10N60A IXSH 24N60A IXSH 30N6QA IXSH 40N60A IXSH 25N100A	OCR Scan	PDF	2N100 30N60 40N60 25N100 45N100 45N120 2N100A 10N60A 24N60A 30N6QA 40N60A G 40N60 igbt IXSN35N120AU1 IXSH 35N120AU1 50N60AU1 25N120AU1 IXLH35N120A IXLK35N120AU1 IXLN35N120AU1 IXLN50N120A
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	PDF	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
b14 smd diode Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60 Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60	OCR Scan	PDF	T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60

Privacy Settings

50N120 Search Results

50N120 Price and Stock

STMicroelectronics SCT50N120

Infineon Technologies AG IKQ50N120CH3XKSA1

STMicroelectronics SCTWA50N120

IXYS Corporation IXYH50N120C3D1

IXYS Corporation IXYH50N120C3

50N120 Datasheets (1)

50N120 Datasheets Context Search

50N120D1

50N100

IXLN50N120A

Untitled

50N120AU1

100N120

40N120

Untitled

Untitled

Untitled

IXLN50N120A

jvv diode

M232

IXBH 40N160

1V110

8n80

40N60A

DSE 130 -06A

b14 smd diode