50CM2X Search Results

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ /¿PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1815 is a switching device which can be 8 driven directly by a 2.5-V power source. 5 The JUPA1815 features a low on-state resistance and

UPA1856GR

Abstract: PA1856 PA1856GR-9JG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BA5415A

Contextual Info: Audio ICs High-output dual power amplifier BA5415A/BA5416 The BA5415Aand BA5416 are dual power amplifier ICs that operate off a 9V to 15V supply. When driving a 4Q load off a 9V supply, the BA5415A does not require a heatsink. The BA5416 uses a lost-cost package. The basic charac­

Contextual Info: Regulator ICs System power supply for CD radio cassette players BA3940A With built-in 9V, 7V, and 5V outputs, the BA3940A system power supply 1C is best suited for use in CD radio cas­ sette players. •A pp lication s CD radio cassette players •F e a tu re s

PA1812

Abstract: uPA1812 UPA1812GR-9JG N354
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor jjl PA1812 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1812 is a switching device which can be driven directly by a 4V power source. The uPA1812 features a low on-state resistance and excellent

Contextual Info: DATA SHEET MOS Field Effect Transistor ß PA1802 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The//PA1802 is a switching device which can be driven directly by a 2.5V power source. The /x PA1802 features a low on-state resistance and excellent

d1273

Abstract: SS-220 10v PA1851 UPA1851GR-9JG
Contextual Info: DATASHEET MOS Field Effect Transistor H P A 1851 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The //PA1851 is a switching device which can be driven directly by a 4V power source. The n PA1851 features a low on-state resistance and excellent

BA5415A

Abstract: RF240 1000u capacitors 100HZ BA5416 HSIP-B12 ba5415a rl 8 12v AUDIO AMPLIFIER CIRCUIT DIAGRAM
Contextual Info: BA5415A / BA5416 Audio ICs High-output dual power amplifier BA5415A / BA5416 The BA5415A and BA5416 are dual power amplifier ICs that operate off a 9V to 15V supply. When driving a 4Ω load off a 9V supply, the BA5415A does not require a heatsink. The BA5416 uses a lost-cost package. The basic characteristics

PA1810

Abstract: 4360M
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1810 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1810 is a switching device which can be driven directly by a 2.5 V power source. The µPA1810 features a low on-state resistance and

UPA1801

Abstract: UPA1801GR-9JG
Contextual Info: DATA SHEET / n ec MOS Field Effect Transistor UPA1801 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The uPA1801 is a switching device which can be driven directly by a 2.5V power source. The uPA1801 features a low on-state resistance and excellent

g10q

Abstract: PA1853 uPA1853GR-9JG
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor H PA1853 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The ¡x PA1853 is a switching device which can be driven directly by a 4V power source. The n PA1853 features a low on-state resistance and excellent

UPA1800

Abstract: UPA1800GR-9JG NEC *50A nec 10D
Contextual Info: DATA SHEET MOS Held Effect Transistor UPA1800 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The uPA1800 is a switching device which can be driven directly by a 4.0V power source. The uPA1800 features a low on-state resistance and excellent

F520NS

Abstract: UPA1850 UPA1850GR-9JG
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS Field Effect Transistor UPA1850 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The uPA1850 is a switching device which can be driven directly by a 2.5V power source. The uPA1850 features a low on-state resistance and excellent

BA5415A

Abstract: 11POWER
Contextual Info: Audio ICs High-output dual power amplifier BA5415A/B A5416 The BA5415A and BA5416 are dual power am plifier ICs that operate off a 9V to 15V supply. When driving a 4 Q load off a 9V supply, the BA5415A does not require a heatsink. The BA5416 uses a lost-cost package. The basic charac­

PA1810

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Audio ICs High-output dual power amplifier B A 5 4 1 5 A /B A 5 4 1 6 The BA5415A and BA5416 are dual pow er am plifier ICs that operate off a 9V to 15V supply. When driving a 4 f i load off a 9V supply, the BA5415A does not require a heatsink. The BA5416 uses a lost-cost package. The basic charac­