4606 fet
Abstract: No abstract text available
Text: WWWFASTRONGROUPCOM GpikpggtÓu"Mkv"<"GM/RKUP 905 407 502 907 æ":072"tgh 3502"ocz 502 407 33072"ocz RKUP 502 ;077"ocz Kpfwevcpeg RKUP/322O/26 RKUP/372O/26 RKUP/442O/26 RKUP/552O/26 RKUP/692O/26 RKUP/8:2O/26 RKUP/323O/26 RKUP/373O/26 RKUP/443O/26 RKUP/553O/26
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RKUP/322O/26
RKUP/372O/26
RKUP/442O/26
RKUP/552O/26
RKUP/692O/26
2O/26
RKUP/323O/26
RKUP/373O/26
RKUP/443O/26
RKUP/553O/26
4606 fet
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TD62501
Abstract: TD62501F TD62501P TD62502F TD62502P TD62503F TD62503P TD62504F TD62504P TD62505P
Text: TD62501~507P/F TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 7CH SINGLE DRIVER TD62501, 502, 503, 504P / F : COMMON EMITTER
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TD62501
507P/F
TD62501P
TD62501F
TD62502P
TD62502F
TD62503P
TD62503F
TD62504P
TD62504F
TD62504P
TD62505P
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2N6059
Abstract: 2N6058 1000C 100C
Text: TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502 Devices Qualified Level 2N6058 JANTX JANTXV 2N6059 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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MIL-PRF-19500/502
2N6058
2N6059
1000C
2N6058
O-204AA)
2N6059
1000C
100C
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5SDD0105Z0400
Abstract: 0105Z0400
Text: 5SDD 0105Z0400 5SDD 0105Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502
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0105Z0400
1768/138a,
DS/291/11
May-11
May-11
5SDD0105Z0400
0105Z0400
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2N6059
Abstract: 2N6058 100C 1000C
Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation 1
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2N6058
2N6059
MIL-PRF-19500/502
1000C
2N6058
2N6059
O-204AA)
100C
1000C
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Untitled
Abstract: No abstract text available
Text: 5SDD 0105Z0401 5SDD 0105Z0401 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502
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0105Z0401
1768/138a,
DS/318/13b
Jan-14
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2N6058
Abstract: 2N6059
Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current
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2N6058
2N6059
MIL-PRF-19500/502
1000C
2N6058
2N6059
O-204AA)
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SEMIX402GAL
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAL066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GAL066HDs
SEMiX402GAL066HDs
SEMIX402GAL
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GAR066HDs
SEMiX402GAR066HDs
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GAR066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V
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SEMiX402GAR066HDs
SEMiX402GAR066HDs
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Untitled
Abstract: No abstract text available
Text: 5SDD 0105Z0400 5SDD 0105Z0400 Housingless Welding Diode Properties • High forward current capability • Low forward and reverse recovery losses Applications Welding equipment High current application up to 2000 Hz Key Parameters = 400 V RRM = 10 502
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PDF
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0105Z0400
1768/138a,
DS/291/11b
May-12
May-12
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Untitled
Abstract: No abstract text available
Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules SEMiX402GB066HDs VGES tpsc Tj ICRM = 2xICnom VCC = 360 V
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SEMiX402GB066HDs
SEMiX402GB066HDs
E63532
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CN300
Abstract: CP500 CP501 CP502 CP503 CP504
Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS
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CP500
CP503
CN300
CP500
CP501
CP502
CP503
CP504
C-120
504Rev
CP501
CP502
CP504
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CP501
Abstract: CN300 CP500 CP502 CP503 CP504 IC 504
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS
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CP500
CP503
CN300
CP500
CP501
CP502
CP503
CP504
C-120
504Rev
CP501
CP502
CP504
IC 504
|
|
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Untitled
Abstract: No abstract text available
Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C
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SEMiX402GB066HDs
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semix igbt GAL
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C
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SEMiX402GAL066HDs
semix igbt GAL
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS CP500 / 501 / 502 CP503 / 504 TO-92 Plastic Package E BC General Purpose Audio Transistors Complementary CN300 series ABSOLUTE MAXIMUM RATINGS
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PDF
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CP500
CP503
CN300
CP500
CP501
CP502
CP503
CP504
C-120
504Rev
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herrmann bridge rectifier
Abstract: 2KHB05 2KHB10 2KHBR05 2KHBR10 2KHBS05 2KHBS10 C1500 2KHBS4 BC1-500
Text: Bulletin 55 - 502 KHEL Khandelwal Herrmann Electronics Limited VRRM : 50 - 1000 Volts V RMS : 20 - 500 Volts I O AVG : 2.5 Ampere TECHNICAL SPIFICATIONS OF SILICON BRIDGE RECTIFIER DIODES TYPE 2KHB05 TO 2KHB10 ; 2KHBR05 TO 2KHBR10 ; 2KHBS05 TO 2KHBS10 FEATURES
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2KHB05
2KHB10
2KHBR05
2KHBR10
2KHBS05
2KHBS10
Plot-101,
herrmann bridge rectifier
2KHB10
2KHBR10
2KHBS10
C1500
2KHBS4
BC1-500
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Untitled
Abstract: No abstract text available
Text: SEMiX402GB066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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SEMiX402GB066HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAL066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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Original
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PDF
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SEMiX402GAL066HDs
E63532
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Untitled
Abstract: No abstract text available
Text: SEMiX402GAR066HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 600 V Tc = 25 °C 502 A Tc = 80 °C 379 A 400 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 6 µs -40 . 175 °C
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SEMiX402GAR066HDs
E63532
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PL350
Abstract: No abstract text available
Text: PL3502GP N THRU PL3506GP(N) Glass Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ High reliability ¬ High surge current capability PRESS-FIT .506( O12.85) .502( O12.75)
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PL3502GP
PL3506GP
UL94V-0
90gram
300uS
MAR-04
PL350
|
Untitled
Abstract: No abstract text available
Text: PL6002JP N THRU PL6006JP(N) Polyimide Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 60 Ampere Features PRESS-FIT ¬ Low forward voltage drop ¬ High current capability .506( O12.85) .502( O12.75) ¬ High reliability .468( O11.9) .460( O11.7)
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PL6002JP
PL6006JP
UL94V-0
90gram
300uS
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Untitled
Abstract: No abstract text available
Text: PL3502JP N THRU PL3506JP(N) Polyimide Passivated Auto Rectifier YENYO Voltage Range 200 to 600 V Current 35 Ampere Features PRESS-FIT ¬ Low forward voltage drop ¬ High current capability .506( O12.85) .502( O12.75) ¬ High reliability .468( O11.9) .460( O11.7)
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PL3502JP
PL3506JP
UL94V-0
70gram
300uS
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