AN-7528
Abstract: 50us60s TA49468 mosfet 600V 50A 25A10 an7528
Text: tm FFH50US60S Features 50A, 600V, Stealth Diode • Stealth Recovery, Trr = 113 ns @ IF = 50 A The FFH50US60S is a Stealth™ diode optimized for low loss performance in output rectification. The Stealth™ family exhibits low reverse recovery current (IRM(REC), low VF and soft
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FFH50US60S
FFH50US60S
AN-7528
50us60s
TA49468
mosfet 600V 50A
25A10
an7528
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rju60c6
Abstract: No abstract text available
Text: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg
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RJU60C6WDPK-M0
R07DS0875EJ0100
PRSS0004ZH-A
rju60c6
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJU60C6WDPK-M0 600V - 50A - Dual Diode Super Fast Recovery Diode R07DS0875EJ0100 Rev.1.00 Sep 03, 2012 Features • Fast reverse recovery time: trr = 100 ns typ. at IF = 30 A, di/dt = 100 A/s Per Leg Low forward voltage: VF = 1.4 V typ. (at IF = 50 A) Per Leg
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RJU60C6WDPK-M0
R07DS0875EJ0100
PRSS0004ZH-A
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TOPSWITCH 242
Abstract: topswitch StackFET
Text: LXA08T600C Qspeed Family 600 V, 8 A X-Series Common-Cathode Diode Product Summary IF AVG per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V
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LXA08T600C
O-220AB
Bangalore-560052
TOPSWITCH 242
topswitch StackFET
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rjh60f7
Abstract: rjh60f7bdpqa0t0 RJH60F7BDPQ-A0
Text: Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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RJH60F7BDPQ-A0
R07DS0633EJ0100
PRSS0003ZH-A
O-247A)
rjh60f7
rjh60f7bdpqa0t0
RJH60F7BDPQ-A0
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RJH60F7
Abstract: RJH60F7BD RJH60F7BDPQ RJH60F7BDPQ-A0 rjh60f7bdpqa0t0 RJH60F7B
Text: Preliminary Datasheet RJH60F7BDPQ-A0 600V - 50A - IGBT High Speed Power Switching R07DS0633EJ0100 Rev.1.00 Feb 17, 2012 Features • Low collector to emitter saturation voltage VCE sat = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) Built in fast recovery diode in one package
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RJH60F7BDPQ-A0
R07DS0633EJ0100
PRSS0003ZH-A
O-247A)
RJH60F7
RJH60F7BD
RJH60F7BDPQ
RJH60F7BDPQ-A0
rjh60f7bdpqa0t0
RJH60F7B
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Untitled
Abstract: No abstract text available
Text: MUR20005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR20060CT(R) SUPER FAST DIODE MODULE TYPES 200A Features 200 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM TWIN TOWER A R Maximum Ratings B Operating Temperature: -55 C to+175 Storage Temperature: -55 C to +175
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MUR20005CT
MUR20060CT
MUR20010CT
MUR20020CT
MUR20040CT
Sur00
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Untitled
Abstract: No abstract text available
Text: MUR30005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR30060CT(R) SUPER FAST DIODE MODULE TYPES 300A Features 300 Amp Rectifier 50-600 Volts High Surge Capability Types Up to 600V V RRM TWIN TOWER A R Maximum Ratings B Operating Temperature: -55 C to+175 Storage Temperature: -55 C to +175
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MUR30005CT
MUR30060CT
MUR30010CT
MUR30020CT
MUR30040CT
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lxa04t600
Abstract: DIODE 200A 600V schottky AN-300 SCHOTTKY 4A 600V TOPSWITCH 242 lxa04
Text: LXA04T600, LXA04B600 QSpeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 A V nC A General Description This device has the lowest QRR of any 600V
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LXA04T600,
LXA04B600
O-220AC
O-263AB
LXA04T600
lxa04t600
DIODE 200A 600V schottky
AN-300
SCHOTTKY 4A 600V
TOPSWITCH 242
lxa04
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TOPSWITCH 242
Abstract: D803
Text: LXA04T600, LXA04B600 Qspeed Family 600 V, 4 A X-Series PFC Diode Product Summary IF AVG VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 4 600 50 2.6 0.8 General Description A V nC A This device has the lowest QRR of any 600V
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LXA04T600,
LXA04B600
O-220AC
LXA04T600
O-263AB
LXA04B600
Bangalore-560052
TOPSWITCH 242
D803
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSKD 150E IFAV VRRM = 272 A = 200-600V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 150E/02 PSKD 150E/04 PSKD 150E/06 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine
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00-600V
150E/02
150E/04
150E/06
30iF/dt
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSKD 100E IFAV VRRM = 136 A = 200-600V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 100E/02 PSKD 100E/04 PSKD 100E/06 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine
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00-600V
100E/02
100E/04
100E/06
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200E-02
Abstract: 200E
Text: Fast Recovery Epitaxial Diode FRED Module PSKD 200E IFAV VRRM = 408 A = 200-600V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSKD 200E/02 PSKD 200E/04 PSKD 200E/06 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine
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00-600V
200E/02
200E/04
200E/06
200E-02
200E
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PSMD150E
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSMD 150E IFAV VRRM = 272 A = 200-600V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSMD 150E/02 PSMD 150E/04 PSMD 150E/06 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine
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00-600V
150E/02
150E/04
150E/06
30/dt
PSMD150E
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED Module PSND 150E IFAV VRRM = 272 A = 200-600V Preliminary Data Sheet VRSM V 200 400 600 VRRM V 200 400 600 Type PSND 150E/02 PSND 150E/04 PSND 150E/06 Symbol Test Conditions IFAV IFSM TC = 70°C TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine
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00-600V
150E/02
150E/04
150E/06
30/dt
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APPLICATION NOTES IGBT
Abstract: 4101 transistor 25CC
Text: 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID T k J g ^ f a a f\ 4 4 1 U I M.S. KENNEDY CORP. 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • 600V, 50 Amp Capability • Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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S134300
4101B
Mil-H-38534
APPLICATION NOTES IGBT
4101 transistor
25CC
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Untitled
Abstract: No abstract text available
Text: MUR20005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR20060CT(R) SUPER FAST DIODE MODULE TYPES 200A Features High Surge Capability Types Up to 600V V rrm 200 Amp Rectifier 50-600 Volts TWIN TOWER 4- A R Maximum Ratings 1 Operating Temperature: -55 C to+175 °C
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OCR Scan
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MUR20005CT
MUR20060CT
MUR20040CT
MUR20020CT
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PDF
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Untitled
Abstract: No abstract text available
Text: M UR5005 R THRU DACO SEMICONDUCTOR CO., LTD. M U R5060(R) SUPER FAST RECOVERY DIODE STUD TYPES 50A Features 50 Amp Rectifier 50-600 Volts High Surge C apability Types Up to 600V V rrm Maximum Ratings O p e ra tin g T e m p e ra tu re : Storage T e m p e r a tu re :
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MUR5005
R5060
MUR5010
MUR5020
MUR5040
MUR5060
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PDF
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: MUR30005CT R DACO SEMICONDUCTOR CO., LTD. THRU MUR30060CT(R) SUPER FAST DIODE MODULE TYPES 300A Features High Surge Capability Types Up to 600V V rrm 3 0 0 A m p R e c tifie r 5 0 - 6 0 0 V o lts TWIN TOWER A 4- R Maximum Ratings Maximum RMS Voltage 50 V
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OCR Scan
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MUR30005CT
MUR30060CT
MUR30040CT
MUR3001
r30060c
r3000
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PDF
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. M U RH 10005 R THRU MURH 10060(R) SU PER FAST DIODE MODULE TYPES 100A Features High Surge Capability 100 A m p Rectifier Types Up to 600V Vrrm 50-600 Volts Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to+175 °C Storage Temperature: -55 C to+175 °C
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OCR Scan
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MURH10005
MURH10010
MURH10020
MURH10040
MURH10060
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PDF
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. M U RH 10005 R THRU MURH 10060(R) SU PER FAST DIODE MODULE TYPES 100A Features High Surge Capability 100 A m p Rectifier Types Up to 600V VRRM 50-600 Volts Maximum Ratings HALF PACKAGE Operating Temperature: -55 C to+175 °C Storage Temperature: -55 C to +175 °C
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OCR Scan
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MURH10005
MURH10010
URH10020
URH10040
URH10060
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PDF
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. MURF30005 R THRU MURF30060(R) SUPER FAST DIODE MODULE TYPES 300A 300 Amp Rectifier Features High Surge Capability 50-600 Volts Types Up to 600V V rrm Full Pack A 4 - Maximum Ratings Storage T e m p e ra tu re :-55 C to + 1 7 5 ° C
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OCR Scan
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MURF30005
MURF30060
MURF300051R)
MURF30010IR)
MURF30020
f30005
f30060
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PDF
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Untitled
Abstract: No abstract text available
Text: DACO SEMICONDUCTOR CO., LTD. M U R F4 0 0 0 5 R THRU M U R F4 0 0 6 0 (R ) SUPER FAST DIODE MODULE TYPES 400A 400 Amp Rectifier Features High Surge Capability 50-600 Volts Types Up to 600V V rrm Full Pack A 4 - Maximum Ratings Storage Temperature:-55 C to + 1 7 5 °C
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MURF40005
MURF40060
MURF40010IR)
MURF40020
MURF40040covery
f40060
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