5-PIN SUPER MINI PACKAGE PACKAGE OUTLINE DIMENSIONS Search Results

Contextual Info: 5-Pin Extreme Super Mini Package ESV Package Outline Dimensions Outline Dimensions Unit: mm 1.6 ±0.05 0.2 ±0.05 1.6 ±0.05 4 1.2 ±0.05 5 0.12 ±0.05 0.5 0.5 1.0 ±0.05 Land Pattern Example 0.55 ±0.05 3 1 Unit: mm 1.35 0.45 0.3 Toshiba package name 0.5

transistor Toshiba

Abstract: SSOP5-P-0.65A 5-Pin Super Mini Package Package Outline Dimensions
Contextual Info: 5-Pin Ultra Super Mini Package USV Package Outline Dimensions Outline Dimensions Unit: mm 2.0 ±0.2 0.15 +0.1 –0.05 0.2 +0.1 –0.05 1 2.1 ±0.1 4 1.25 ±0.1 5 3 0.65 0.65 0 ~0.1 0.9 ±0.1 1.3 ±0.1 Land Pattern Example Unit: mm 1.9 0.8 0.4 Toshiba package name

Contextual Info: 5-pin Ultra Super Mini Flat Package UFV Package Outline Dimensions Outline Dimensions Unit: mm 2.0 ±0.1 0.16 +0.06 –0.05 0.3 +0.1 –0.05 1 2.1 ±0.1 4 1.7 ±0.1 5 3 0.65 1.3 ±0.1 Land Pattern Example 0.7 ±0.05 0.65 Unit: mm 1.9 0.8 0.45 Toshiba package name

transistor toshiba

Abstract: 5-Pin Super Mini Package Package Outline Dimensions
Contextual Info: 5-Pin Super Mini Package SMV Package Outline Dimensions Outline Dimensions Unit: mm 2.9 ±0.2 0.16 +0.1 –0.06 0.4 ±0.1 1 2.8 +0.2 –0.3 4 1.6 +0.2 –0.1 5 3 0.95 0.95 0 ~0.1 1.1 +0.2 –0.1 1.9 ±0.2 Land Pattern Example 0.95 1.0 2.4 0.95 Unit: mm Toshiba package name

SSOP8 Package

Abstract: land pattern ssop8 SSOP8 ssop8 Package dimension SSOP8-p-0.65
Contextual Info: 8-Pin Super Mini Package SM8 Package Outline Dimensions Outline Dimensions Unit: mm 2.9 ±0.1 0.15 ±0.05 1 4.0 ±0.1 5 2.8 ±0.1 8 0.2 +0.1 –0.05 4 0.65 0.65 0.65 0 ~0.1 1.1 ±0.1 2.9 ±0.1 Land Pattern Example Unit: mm 3.4 0.9 0.4 Toshiba package name

JEDEC MO-187

Abstract: land pattern ssop8 SSOP8 Package SSOP8 MO-187 ssop8 Package dimension transistor toshiba us8 Package
Contextual Info: 8-Pin Ultra Super Mini Package US8 Package Outline Dimensions Outline Dimensions Unit: mm 2.0 ±0.1 0.2 +0.1 –0.05 3.1 ±0.1 5 2.3 ±0.1 8 0.12 ±0.04 0 ~0.1 0.5 0.5 0.5 0.7 ±0.1 4 1 Land Pattern Example Unit: mm 2.7 0.7 0.3 Toshiba package name Toshiba

5-Pin Super Mini Package Package Outline Dimensions

Contextual Info: 5-Pin Fine Pitch Super Mini Package fSV Package Outline Dimensions Outline Dimensions 0.1 ±0.05 4 0.8 ±0.05 5 3 0.35 0.35 0.1 ±0.05 1 0.1 ±0.05 5 3 1 Bottom view 0.48 +0.02 –0.04 0.7 ±0.05 4 1.0 ±0.05 0.15 ±0.05 0.15 max 1.0 ±0.05 0.15 max Unit: mm

MARKING V58

Contextual Info: C TO X BAND N-CHANNEL GaAs MESFET FEATURES NE72218 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz GATE LENGTH: Lg = 0.8 PACKAGE OUTLINE 18 (recessed gate) - 2.1 ± 0 .2 - H .25 ± 0.1 H GATE WIDTH: W g = 400 jim 0-3^0.05 4 PIN SUPER MINI MOLD

ne72218 v58

Abstract: tom 1157
Contextual Info: NEC C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz • NE72218 PACKAGE OUTLINE 18 - 2.1 0 .2 ± - O |to;o5

LOT CODE NE NEC

Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
Contextual Info: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.

ne72218 v58

Abstract: NE72218 NE72218-T1 4E12
Contextual Info: NE72218 C TO X BAND N-CHANNEL GaAs MESFET FEATURES PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.0 dB TYP at f = 12 GHz • LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 11 GHz GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WIDTH: WG = 400 µm

P3Z smd code

Abstract: smd code marking NEC g
Contextual Info: QUICK REFERENCE GUIDE 5 PACKAGING SPECIFICATION FOR "SMD PACKING INFORMATION . _ BULK PACKING 2 /3 PIN ULTRA SUPER MINI MOLD TYPE N0->T1 TYPE N 0. -T2 Q 'ty 3 0 0 0 pcs./reel 8 mm TAPE 2 PIN SUPER MINI MOLD TYPE NO.: -T 1 TYPE NO >T2 Q 'ty 3 0 0 0 pcs./reel

SMD 015 lg

Abstract: C870 OHLQ2146
Contextual Info: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I fa 0-.004 (O-ÿ.1) .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)

2608 surface mount transistor

Abstract: A 3760 0549
Contextual Info: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW

23E16

Abstract: 2SC5004 NE58219 NE58219-T1 S21E 152.01 br 903
Contextual Info: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1

Contextual Info: SIEMENS LS C870 ORANGE LO C870 YELLOW LY C870 GREEN LG C870 PURE GREEN LP C870 super red Mini SIDELED Lamp Dimensions in inches mm .228 (5.8) .212 (5.4) i_ .063 (1.6) .047 (1.2) ♦ -T— I 0-.004 (O-ÿ.1) fa .024 (0.6) I “ 7 .016 (0 .4 1 * 047 (1.2)

2SC5004

Abstract: NE58219 S21E on 5295 transistor 152.01 23E16
Contextual Info: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1

BJT 5240

Abstract: 13170
Contextual Info: NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz BOTTOM VIEW

m33 tf 130

Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Contextual Info: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP

bga 6x8

Abstract: A64S0616 A64S0616G-70 A64S0616G-85
Contextual Info: A64S0616 1M X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 1M X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue November 30, 2001 Preliminary November, 2001, Version 0.0 AMIC Technology, Inc.

bga 6x8 Package

Abstract: A64S9316 A64S9316G-70 bga 6x8
Contextual Info: A64S9316 512K X 16 Bit Low Voltage Super RAMTM Preliminary Document Title 512K X 16 Bit Low Voltage Super RAMTM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue May 16, 2002 Preliminary May, 2002, Version 0.0 AMIC Technology, Inc.

Contextual Info: PRELIMINARY DATA SHEET 3 V SILICON RFIC UPC8106TB FREQUENCY UPCONVERTER INTERNAL BLOCK DIAGRAM FEATURES • RECOMMENDED OPERATING FREQUENCY: fRFout = 0.4 GHz to 2.0 GHz, fIFin = 100 MHz to 400 MHz Top View • SUPPLY VOLTAGE: VCC = 2.7 to 5.5 V LO Input

Contextual Info: PRELIMINARY DATA SHEET 3 V SILICON RFIC FREQUENCY UPCONVERTER UPC8106TB INTERNAL BLOCK DIAGRAM FEATURES RECOMMENDED OPERATING FREQUENCY: = 0.4 GHz to 2.0 GHz, fiF in = 1 00 MHz to 400 MHz Top View fR F o u t SUPPLY VOLTAGE: V cc = 2.7 to 5.5 V LO Input PS

vfo 200v 0.4kw

Abstract: dipipm dipipm application note
Contextual Info: <Dual-In-Line Package Intelligent Power Module> MOSFET Super mini DIPIPM APPLICATION NOTE PSM03S93E5-A / PSM05S93E5-A Table of contents CHAPTER 1 INTRODUCTION .2