4E12 Search Results

NE425S01

Abstract: NE425S01-T1 NE425S01-T1B
Contextual Info: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB

gunn diode ghz s-parameter

Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.

NE34018 equivalent

Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Contextual Info: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and

BJT BF 331

Abstract: BF 331 50e3
Contextual Info: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108

Q1104

Abstract: NE72218
Contextual Info: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1

Contextual Info: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters

1E-16

Contextual Info: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1

Contextual Info: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance

Contextual Info: NONLINEAR MODEL SCHEMATIC NE856M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries

PJ 3236

Abstract: 50E-12 20E-3 40E-12 OPA2604M
Contextual Info: * OPA2604M OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * "M" IS MULTIPLE POLE/ZERO TOPOLOGY * CREATED 7/8/92 BCB * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

op amp 741 model PSpice

Abstract: SSM2131S
Contextual Info: ANALOG DEVICES □ Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES The SSM-2131 's common-mode rejection of 80dB minimum over a± 1 1 range is exceptional for a high-speed amplifier. HighCMR, combined with a minimum 500V/mV gain into a 10kQ load en­

22S21

Abstract: NE329 NEC Ga FET marking A
Contextual Info: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm

1uF SMD 1206 TANTALUM CAPACITOR 16V

Abstract: DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd
Contextual Info: AN/RF/RFDes_1/1 December 1999 The CMX017 and CMX018 Designer’s Notebook A collection of designer’s notes and other useful information Part 1-Alternative Peripheral Devices for the EV0171 and EV0181 Evaluation Boards The CMX017 and CMX018 represent CML’s latest RF Transmitter and Receiver ICs. These two devices enable the

Contextual Info: tm ä n S w it c h x- E123MUX Device s E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION ^ • • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)

a13468

Contextual Info: □RAWINTO MADE IN THIRD ANGLE PROJECTION T H I S DRAWI NG IS UNPUBLISHED. C COPYRIGHT 79 LOC RELEASED FOR PUBLICATION ,79 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. DI ST AF 50 REVISIONS p F ZONE LTR D E SC R IP T IO N REDRAWN AF-6499 c 1 DATE

NE325S01

Contextual Info: NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO

V64 SOT 23

Abstract: 16118 transistor marking v64 ghz NE34018-TI-63-A NE34018-TI-64-A NE34018 NE34018-A marking V64 sot343
Contextual Info: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 20 mA FEATURES • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) • LOW NOISE FIGURE: 0.6 dB typical at 2 GHz NE34018 25 4 Noise Figure, NF (dB)

transistor T1J

Abstract: NEC 9319 bjt npn
Contextual Info: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:

BV-1 501

Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Contextual Info: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1

fds8896

Abstract: FDS8896 S
Contextual Info: FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0mΩ Features General Description r DS ON = 6.0mΩ, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

Contextual Info: FDD120AN15A0 N-Channel PowerTrench MOSFET 150 V, 14 A, 120 mΩ Features Applications • RDS on = 101 mΩ ( Typ.) @ VGS = 10 V, ID = 4 A • Consumer Appliances • QG(tot) = 11.2 nC ( Typ.) @ VGS = 10 V • LED TV • Low Miller Charge • Synchronous Rectification

JFET bf 245

Abstract: ISL28110
Contextual Info: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are

bf 331

Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
Contextual Info: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

Contextual Info: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are