4PIN TRANSISTOR Search Results

TLP621F

Abstract: TLP521 4pin ic TLP521 MOSFET DRIVER TLP151 tlp762 TLP250 MOSFET DRIVER application note 4N26 Photodiode TLP521 SOP-4 TLP3507 TLP250 igbt driver applications
Contextual Info: 2. Selection Guide 6 5 4 2 1 3 4N38 SHORT 4N38A(SHORT) 6 MFSOP6 (4pin) (Mini Flat) AC input 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Standard TLP121 1 6 3 4 MFSOP6 (4pin) (Mini Flat) Low input current TLP124 1 3 6 4 MFSOP6 (4pin) (Mini Flat) AC input Low input current

Contextual Info: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Contextual Info: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Contextual Info: < Small Signal InGaP HBT > MGF3021AM 4pin flat lead package DESCRIPTION The MGF3021AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

Contextual Info: < Small Signal InGaP HBT > MGF3022AM 4pin flat lead package DESCRIPTION The MGF3022AM InGaP-HBT Heterojunction Bipolar Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance.

mgf4935am

Contextual Info: < Low Noise GaAs HEMT > MGF4935AM 4pin flat lead package DESCRIPTION The MGF4935AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4934

Abstract: mgf4934cm MGF4934CM-75 130/KU 601
Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4931AM

Abstract: MGF4931 77153
Contextual Info: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4921AM

Abstract: 5442
Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

MGF4921AM

Contextual Info: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: < Low Noise GaAs HEMT > MGF4934BM 4pin flat lead package DESCRIPTION The MGF4934BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

Contextual Info: Dec./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

InGaAs HEMT mitsubishi

Abstract: 4pin transistor top 205 MGF4934AM GD-30
Contextual Info: Feb./2006 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

mitsubishi 7805

Abstract: MGF4934AM
Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Abstract: MGF4931AM 77153
Contextual Info: May/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4931AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4931AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Contextual Info: Apr./2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934CM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934CM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost

GD-30

Abstract: MGF4934AM
Contextual Info: July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT 4pin flat lead package DESCRIPTION Outline Drawing The MGF4934AM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost