Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    4MX16BITS Search Results

    4MX16BITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HYM76V4M655HGLT6-8

    Abstract: HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S
    Text: 4M x64 bits P C 1 0 0 S D R A M S O D IM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M655HG L T6 Series D E S C R IP T IO N The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original
    PDF PC100 4Mx16 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYM76V4M655HGLT6-8 HYM76V4M655HGLT6-P HYM76V4M655HGLT6-S HYM76V4M655HGT6-P HYM76V4M655HGT6-S

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F404CS KMM372F404CS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404C consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original
    PDF KMM372F404CS KMM372F404CS 4Mx16 KMM372F404C 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original
    PDF KMM372V804CS KMM372V804CS 4Mx16 KMM372V804C 8Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM374F804CS1 KMM374F804CS1 Fast EDO Mode without buffer 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F804CS1 is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F804CS1 consists of eight CMOS 4Mx16bits


    Original
    PDF KMM374F804CS1 KMM374F804CS1 4Mx16 8Mx72bits 4Mx16bits 400mil 300mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original
    PDF 8Mx64 PC133 4Mx16 HYM76V8M635HG HYM76V8M635AT6 8Mx64bits 4Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series Preliminary DESCRIPTION The Hyundai HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original
    PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    KMM372F804BS

    Abstract: No abstract text available
    Text: KMM372F804BS DRAM MODULE KMM372F804BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original
    PDF KMM372F804BS KMM372F804BS 4Mx16 KMM372F804B 8Mx72bits KMM372F804B 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: KMM372V804BS DRAM MODULE KMM372V804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in


    Original
    PDF KMM372V804BS KMM372V804BS 4Mx16 KMM372V804B 8Mx72bits KMM372V804B 4Mx16bits 400mil 168-pin

    KMM372F404BS

    Abstract: No abstract text available
    Text: KMM372F404BS DRAM MODULE KMM372F404BS EDO Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in


    Original
    PDF KMM372F404BS KMM372F404BS 4Mx16 KMM372F404B 4Mx72bits KMM372F404B 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: M372V0405DT0-C DRAM MODULE M372V0405DT0-C Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M372V0405DT0-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M372V0405DT0-C consists of four 4Mx16bits & two 4Mx4bits


    Original
    PDF M372V0405DT0-C M372V0405DT0-C 4Mx16 4Mx72bits 4Mx16bits 400mil 168-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4CS1 KMM366F40(8)4CS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4CS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4CS1 consists of four CMOS 4Mx16bits


    Original
    PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin

    K4E641612D-T

    Abstract: No abstract text available
    Text: DRAM MODULE M374F0405DT1-C M374F0405DT1-C EDO Mode without buffer 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung M374F0405DT1-C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung M374F0405DT1-C consists of four CMOS 4Mx16bits DRAMs


    Original
    PDF M374F0405DT1-C M374F0405DT1-C 4Mx16 4Mx72bits 4Mx16bits 300mil 168-pin K4E641612D-T

    KMM5328000BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5328000BSW/BSWG KMM5328000BSW/BSWG Fast Page Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328000B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328000B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original
    PDF KMM5328000BSW/BSWG KMM5328000BSW/BSWG 4Mx16, KMM5328000B 8Mx32bits KMM5328000B 4Mx16bits 72-pin KMM5328000BSW

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original
    PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4635HGT6 Series DESCRIPTION The Hynix HYM76V4635AT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original
    PDF 4Mx64 PC133 4Mx16 HYM76V4635HGT6 HYM76V4635AT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    KMM366F404BS1

    Abstract: No abstract text available
    Text: DRAM MODULE KMM366F40 8 4BS1 KMM366F40(8)4BS1 EDO Mode without buffer 4M x 64 DRAM DIMM Using 4Mx16, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F40(8)4BS1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(8)4BS1 consists of four CMOS 4Mx16bits


    Original
    PDF KMM366F40 4Mx16, 4Mx64bits 4Mx16bits 400mil 168-pin KMM366F404BS1

    KMM5328004BSW

    Abstract: KMM5328004BSWG
    Text: DRAM MODULE KMM5328004BSW/BSWG KMM5328004BSW/BSWG EDO Mode 8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5328004B is a 8Mx32bits Dynamic RAM high density memory module. The Samsung KMM5328004B consists of four CMOS 4Mx16bits DRAMs in TSOP packages


    Original
    PDF KMM5328004BSW/BSWG KMM5328004BSW/BSWG 4Mx16, KMM5328004B 8Mx32bits KMM5328004B 4Mx16bits 72-pin KMM5328004BSW KMM5328004BSWG

    KMM5324004BSW

    Abstract: KMM5324004BSWG
    Text: DRAM MODULE KMM5324004BSW/BSWG KMM5324004BSW/BSWG EDO Mode 4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5324004B is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM5324004B consists of two CMOS 4Mx16bits DRAMs in TSOP packages


    Original
    PDF KMM5324004BSW/BSWG KMM5324004BSW/BSWG 4Mx16, KMM5324004B 4Mx32bits KMM5324004B 4Mx16bits 72-pin KMM5324004BSW KMM5324004BSWG

    HYNIX process code

    Abstract: S08H hynix internal process code hynix module internal process code hym76v8m655hgt sdram dimm module hynix so 128 144
    Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V8M655HG L T6 Series DESCRIPTION The Hynix HYM71V8M655HG(L)T6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin


    Original
    PDF 8Mx64 PC100 4Mx16 HYM76V8M655HG HYM71V8M655HG 8Mx64bits 4Mx16bits 400mil 54pin 168pin HYNIX process code S08H hynix internal process code hynix module internal process code hym76v8m655hgt sdram dimm module hynix so 128 144

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC133 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM76V4M635HG L T6 Series DESCRIPTION The Hynix HYM76V4M635HGT6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original
    PDF 4Mx64 PC133 4Mx16 HYM76V4M635HG HYM76V4M635HGT6 4Mx64bits 4Mx16bits 400mil 54pin 168pin

    HYM7V65801B BLTQ-10S BA

    Abstract: No abstract text available
    Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series DESCRIPTION The Hyundai’ s HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP


    Original
    PDF 8Mx64 PC100 4Mx16 HYM7V65801B 8Mx64bits 4Mx16bits 400mil 54pin 144pin HYM7V65801B BLTQ-10S BA

    Untitled

    Abstract: No abstract text available
    Text: HYM76V4M655HG L T6 4Mx64, 4M x 16 based, PC100 DESCRIPTION The Hynix HYM76V4M655HG(L)T6 Series are 4Mx64bits Synchronous DRAM Modules. The modules are composed of four 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in Spin TSSOP package on a 168pin


    OCR Scan
    PDF HYM76V4M655HG 4Mx64, PC100 HYM76V4M655HG 4Mx64bits 4Mx16bits 400mil 54pin 168pin HYW6V4M655HG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005ASW/ASWG KMM5368005ASW/ASWGEDO Mode 8M X 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5368005A is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368005A consists of four CMOS 4Mx16bits and two CMOS Quad CAS


    OCR Scan
    PDF KMM5368005ASW/ASWGEDO KMM5368005ASW/ASWG 4Mx16 KMM5368005ASW cycles/64ms KMM5368005ASWG 1000mil) KMM5368005A 8Mx36bits

    EM009

    Abstract: EM-009
    Text: HYM76V8M635HG L T6 8Mx64, 4Mx16 based, PC133 DESCRIPTION The Hynix HYM76V8M635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 4Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    OCR Scan
    PDF HYM76V8M635HG 8Mx64, 4Mx16 PC133 HYM76V8M635AT6 8Mx64bits 4Mx16bits 400mil 54pin 168pin EM009 EM-009