4MBIT EEPROM Search Results

Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

FM22LD16-55-BGTR

Abstract: FM22LD16-55-BG
Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22LD16 FM22LD16-55-BG
Contextual Info: Preliminary FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 256KX16
Contextual Info: Preliminary FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

TSOP-II 44 Recommended PCB Footprint

Abstract: FM22L16-55-TG FM22L16
Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

MSL3 RoHS FBGA

Abstract: FM22LD16 FM23MLD16 FM22LD16-55-BG
Contextual Info: Pre-Production FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM20L08

Abstract: FM22L16 FM22L16-55-TG FM22L16-5 e1 fram
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

FM22L16-55-TG

Abstract: FM20L08 FM22L16 MS-024g TSOP-II 44 Recommended PCB Footprint
Contextual Info: Preliminary FM22L16 4Mbit FRAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

TSOP-II 44 Recommended PCB Footprint

Abstract: FM22L16-55
Contextual Info: FM22L16 4Mbit Asynchronous F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

Contextual Info: FM22LD16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16  Configurable as 512Kx8 Using /UB, /LB  1014 Read/Write Cycles  NoDelay Writes  Page Mode Operation to 40MHz  Advanced High-Reliability Ferroelectric Process

FM22L16

Abstract: FM22L16-55-TG
Contextual Info: Pre-Production FM22L16 4Mbit F-RAM Memory Features 4Mbit Ferroelectric Nonvolatile RAM • Organized as 256Kx16 • Configurable as 512Kx8 Using /UB, /LB • 1014 Read/Write Cycles • NoDelay Writes • Page Mode Operation to 40MHz • Advanced High-Reliability Ferroelectric Process

A1815

Abstract: 10101B 10010b
Contextual Info: NROM4EE SAIFUN PROPRIETARY 4Mbit 512K x 8 PARALLEL EEPROM 2.7 Volt Low Power EEPROM With Basic Flash Functionality LOGIC DIAGRAM GENERAL DESCRIPTION The NROM4EE is a 4Mbits high performance, low power parallel EEPROM device that supports also basic Flash functionality. The device is typically

SST29SF040

Contextual Info: 4 Mbit x8 Small-Sector Flash SST29SF040 / SST29VF040 Preliminary Specifications SST29SF/VF040 4Mbit (x8) Byte-Program, Small-Sector flash memories FEATURES: • Organized as 512K x8 • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST29SF040

noise immunity for IC 7432

Abstract: .dd2 nRF24Z1 schematic atx 250 digital ic 7432 virtual surround dsp mcu N-7075 nRF24xx QFN36 ATX 2005 schematic diagram
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION nRF24Z1 2.4GHz wireless audio streamer FEATURES APPLICATIONS • Low cost 0.18u CMOS process, 36 pin 6x6mm QFN package Single chip 2.4GHz RF transceiver 4Mbit/sec RF link Input/output sample rate up to 48kSPS, 24 bit Programmable latency

M128E32

Abstract: 4Mbit eeprom 28 pin 128k eeprom
Contextual Info: M128E32 128K x 32 EEPROM Issue 2.1 December 2007 General Description Features The M128E32 is a high reliability 4Mbit EEPROM with access times of 120, 150 and 200ns. The part is normally organised as 128Kx32bits wide but is user configurable as 256Kx16 or 51Kx8. For surface

f173

Contextual Info: 4 Mbit x8 Small-Sector Flash SST29SF040 / SST29VF040 Preliminary Specifications SST29SF/VF040 4Mbit (x8) Byte-Program, Small-Sector flash memories FEATURES: • Organized as 512K x8 • Single Voltage Read and Write Operations – 4.5-5.5V-only for SST29SF040

Contextual Info: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

Contextual Info: 128K x 32 EEPROM Module PUMA 68E4001/A-12/15/20 Issue 4.2 : November 1998 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The PUMA 68E4001/A is a 4Mbit CMOS EEPROM module in a JEDEC 68 pin surface

AVR 8515 microcontroller

Abstract: FPGA AMI coding decoding tri state AOI222 AOI2223 AOI2223H AOI222H ATL35 0.35-um CMOS standard cell library inverter
Contextual Info: Features • System Level Integration Technology • 0.35 µm Geometry in Triple-level Metal • I/O Interfaces; CMOS, LVTTL, LVDS, PCI, USB – Output Currents up to 20 mA, 5V Tolerant I/O • Embedded Flash Memory with Capacities of 1Mbit, 2Mbit or 4Mbit

ATX 2005 schematic diagram

Abstract: .dd2 nRF24Z1 atx schematic CC1608-0603 nRF24xx atx power supply schematic dc schematic atx 250 2.4GHz RECEIVER IC atx power supply schematic
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION nRF24Z1 2.4GHz wireless audio streamer FEATURES APPLICATIONS • • • • • • • • • • • • • • • Low cost 0.18u CMOS process, 36 pin 6x6mm QFN package Single chip 2.4GHz RF transceiver 4Mbit/sec RF link

max3843

Abstract: pc646
Contextual Info: PSD835G2V Flash PSD, 3V Supply, for 8-bit MCUs 4Mbit + 256 Kbit Dual Flash Memories and 64Kbit SRAM PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ FLASH IN-SYSTEM PROGRAMMABLE ISP PERIPHERAL FOR 8-BIT MCUs DUAL BANK FLASH MEMORIES

Contextual Info: 128K x 32 EEPROM Module PUMA 68E4001/A-12/15/20 Issue 4.3 : May 2001 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0 191 2930500 Fax. +44 (0) 191 2590997 Description The PUMA 68E4001/A is a 4Mbit CMOS EEPROM module in a JEDEC 68 pin surface