WE 251
Abstract: UG12M43602KBT UG12M43602KBG
Text: UG12M43602KBG T 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M x 4 & 4M x 1 General Description Features The UG12M43602KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG12M43602KBG(T) is assembled using 8 pcs of 4Mx4 2K refresh DRAMs 300mil Package and 4 pcs of 4Mx1
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UG12M43602KBG
72Pin
300mil
1000mil)
WE 251
UG12M43602KBT
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IBM01164004M
Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
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IBM0116400B4M
Abstract: IBM01164004M IBM0116400M
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
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IBM01164004M
Abstract: IBM0116400B4M IBM0116400M
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - last order; 3/99 last ship IBM01164004M x 412/10, 5.0VMMDD31DSU-011010328. IBM0116400P 4M x 412/10, 3.3V, LP, SRMMDD31DSU-011010328. IBM0116400M 4M x 412/10, 5.0V, LP, SRMMDD31DSU-011010328. IBM0116400B4M x 412/10, 3.3VMMDD31DSU-011010328.
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IBM01164004M
0VMMDD31DSU-011010328.
IBM0116400P
SRMMDD31DSU-011010328.
IBM0116400M
IBM0116400B4M
3VMMDD31DSU-011010328.
IBM0116400
IBM0116400M
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Untitled
Abstract: No abstract text available
Text: UG9M43622 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43622(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M436202(4)KBG(T) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4
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UG9M43622
72Pin
UG9M436202
300mil
1000mil)
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Untitled
Abstract: No abstract text available
Text: UG9M43702 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG9M43702(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43702(4)KBG(T) is assembled using 9 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin
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UG9M43702
72Pin
300mil
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Untitled
Abstract: No abstract text available
Text: UG9M43722 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG9M43722(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43722(4)KBG(T) is assembled using 9 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin
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UG9M43722
72Pin
300mil
1000mil)
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4m dram 72-pin simm 32
Abstract: No abstract text available
Text: UG9M43602 4 KBG(T) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43602(4)KBG(T) is a 4,149,304 bits by 36 SIMM module.The UG9M43602(4)KBG(T) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4
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UG9M43602
72Pin
300mil
1000mil)
4m dram 72-pin simm 32
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Untitled
Abstract: No abstract text available
Text: UG54E642 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54E642(4)4GJ(T)G is a 4,149,304 bits by 64 EDO DRAM module. The UG54E642(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 2K/4K refresh DRAMs in 300mil SOJ
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UG54E642
168Pin
300mil
ABT16244
240mil
168-pin
1000mil)
190Max
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edo dram 50ns 72-pin simm
Abstract: No abstract text available
Text: UG10M44022 4 KBG(T) 16M Bytes (4M x 40) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG10M44022(4)KBG(T) is a 4,149,304 bits by 40 SIMM module.The UG10M44022(4)KBG(T) is assembled using 10 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin
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UG10M44022
72Pin
300mil
edo dram 50ns 72-pin simm
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4Mx4 dram simm
Abstract: No abstract text available
Text: UG10M44002 4 KBG(T) 16M Bytes (4M x 40) DRAM 72Pin SIMM w/ECC based on 4M X 4 General Description Features The UG10M44002(4)KBG(T) is a 4,149,304 bits by 40 SIMM module.The UG10M44002(4)KBG(T) is assembled using 10 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package mounted on 72 Pin
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UG10M44002
72Pin
300mil
4Mx4 dram simm
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"24 pin" DRAM
Abstract: No abstract text available
Text: UG9M43622 4 KBJ(N) 16M Bytes (4M x 36) DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG9M43622(4)KBJ(N) is a 4,149,304 bits by 36 SIMM module.The UG9M43622(4)KBJ(N) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4
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UG9M43622
72Pin
300mil
"24 pin" DRAM
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DRAM72PIN
Abstract: No abstract text available
Text: UG9M43602 4 KBJ(N) 16M Bytes (4M x 36) DRAM 72Pin SIMM based on 4M X 4 General Description Features The UG9M43602(4)KBJ(N) is a 4,149,304 bits by 36 SIMM module.The UG9M43602(4)KBJ(N) is assembled using 8 pcs of 4Mx4 2K/4K refresh DRAMs 300mil SOJ Package and 1 piece of 4Mx4
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UG9M43602
72Pin
300mil
DRAM72PIN
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Untitled
Abstract: No abstract text available
Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W662
168Pin
300mil
168-pin
540Min)
120Max
05Max)
010Max
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A42U2604
Abstract: A42U2604S A42U2604S-50 A42U2604S-60 A42U2604V A42U2604V-50 A42U2604V-50U A42U2604V-60
Text: A42U2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information
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A42U2604
A42U2604
A42U2604S
A42U2604S-50
A42U2604S-60
A42U2604V
A42U2604V-50
A42U2604V-50U
A42U2604V-60
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Untitled
Abstract: No abstract text available
Text: A42U2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information
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A42U2604
A42U2604
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Untitled
Abstract: No abstract text available
Text: UG54W662 4 4GJ(T)G 32M Bytes (4M x 64) DRAM 168Pin DIMM based on 4M x 4 General Description Features The UG54W662(4)4GJ(T)G is a 4,194,304 bits by 64 EDO DRAM module. The UG54W662(4)4GJ(T)G is assembled using 16 pcs of 4Mx4 DRAMs in a 300mil SOJ/TSOP package,and one 2k EEPROM for SPD in
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UG54W662
168Pin
300mil
168-pin
350Max
89Max
540Min)
100Min
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PDF
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A42L2604
Abstract: A42L2604S-45 A42L2604S-50 A42L2604V-45 A42L2604V-45U A42L2604V-50 ATA56
Text: A42L2604 Series 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Document Title 4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History History Issue Date Remark 0.0 Initial issue June 13, 2001 Preliminary 0.1 Modify symbol HE dimensions in TSOP 24L package information
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A42L2604
Identificati12
A42L2604S-45
A42L2604S-50
A42L2604V-45
A42L2604V-45U
A42L2604V-50
ATA56
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Untitled
Abstract: No abstract text available
Text: STI644004G1-60LVG 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-60LVG is a 4M x 64 bits Dynamic RAM high density memory module. The Simple Technology STI644004G1-60LVG consist of sixteen CMOS 4M
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OCR Scan
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STI644004G1-60LVG
144-PIN
104ns
STI644004G1-60LVG
24-pin
300-mil
144-igh
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Untitled
Abstract: No abstract text available
Text: 168-PIN DIMMS STI724107D1 -xxVG 4M X 72 Bit DRAM DIMM with EDO Mode and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI724107D1-xxVG is a 4M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 4M x 4 bit DRAMs in a 24-pin 300-mil
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STI724107D1
168-PIN
-60VG
-70VG
110ns
130ns
STI724107D1-xxVG
24-pin
300-mil
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PDF
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SM5408
Abstract: 4k2k
Text: SMRTD004 SM ART Modular Technologies QUICK REFERENCE G U ID E: WORKSTATION DRAM MODULES DENSITY ORG. REFSH. DRAMS 4M 16M DIMEN. LxHxT ' in. SMART PART NO.2 COMMENTS 2 0 0 PIN, 5 V , FAST PAGE MODE (FPM) 1 4 4 BIT I/O 64MB 64MB 4M X 144 4M X 144 4K 2K 32MB
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SMRTD004
SM51444000A6/7
SM514440006/7
SM514420006/7
SM514410006/7
SM51441000LP6/7
VKIT029t>
SM5408
4k2k
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS / KMM372F41 OBK/BS Fast Page with EDO Mode 4M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F40 1 0B is a 4M x72bits Dynamic • Part Identification
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OCR Scan
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KMM372F400BK/BS
KMM372F41OBK/BS
KMM372F41
KMM372F40
x72bits
372F400BK
cycles/64m
372F400BS
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44C4104
Abstract: No abstract text available
Text: KMM5324004CK/CKG KMM5324104CK/CKG DRAM MODULE KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Sam sung KMM53240 1 04CK is a 4M x32bits RAM high density memory
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OCR Scan
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KMM53240
x32bits
KMM5324004CK/CKG
KMM5324104CK/CKG
KMM5324004CK/CKG
KMM5324104CK/CKG
5324004CK
cycles/64m
5324004CKG
44C4104
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