fhc40lg
Abstract: 18GHZ LG 932 fujitsu hemt
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
FCSI0598M200
fhc40lg
18GHZ
LG 932
fujitsu hemt
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Untitled
Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
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08/bup 3110 transistor
Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FHC40LG
2-12GHz
08/bup 3110 transistor
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Low Noise HEMT
Abstract: Super low noise figure and high associated gain
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
FCSI0598M200
Low Noise HEMT
Super low noise figure and high associated gain
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fhc40lg
Abstract: 18GHZ low noise hemt FH40LG
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FH40LG
2-12GHz
fhc40lg
18GHZ
low noise hemt
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ATC520L103KT16T
Abstract: ATC520L103KT16
Text: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz
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GSA504-12
GSA504-12
ATC520L103KT16T
ATC520L103KT16
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transistor Zo 105
Abstract: 6943-3 55086 HEMT marking P 05973
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz
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OT343
CFH800
OT343
D-130
Rn/50
transistor Zo 105
6943-3
55086
HEMT marking P
05973
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6943-3
Abstract: No abstract text available
Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications
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OT343
CFH800
Rn/50
6943-3
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transistor zo 107
Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
volt-69
Rn/50
transistor zo 107
831 transistor
Transistor 933
transistor 131-6
TRANSISTOR zo 109 ma
Hemt transistor
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GSM repeater circuit using transistor
Abstract: No abstract text available
Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz
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RT243
50MHz
43dBm
14GHz
45dBm
900MHz
IMT-2000
WP-12
GSM repeater circuit using transistor
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Untitled
Abstract: No abstract text available
Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz
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RT243
50MHz
43dBm
14GHz
45dBm
900MHz
IMT-2000
WP-12
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BFR360
Abstract: BFR360T GPS05996
Text: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,
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BFR360T
10dBm
VPS05996
P-SC-75
GPS05996
BFR360
BFR360T
GPS05996
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transistor zo 107
Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz
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OT343
CFH400
Q62702-G0116
OT343
vol51
Rn/50
transistor zo 107
9412 transistor
transistor zo 109
51687
72741
TRANSISTOR zo 109 ma
CFH400
9412 opt
i 72741
Hemt transistor
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Untitled
Abstract: No abstract text available
Text: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology
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RFHA3944
RF360-2
800MHz
2500MHz
-40dBc
DS120418
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RFHA3942
Abstract: RF360
Text: RFHA3942 RFHA3942 35W GaN Wideband Power Amplifier 35W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology Peak Modulated Power >30W
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RFHA3942
RFHA3942
RF360-2
800MHz
2500MHz
-40dBc
DS121109
RF360
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RFHA3944SB
Abstract: RFHA3944 RF360 IRL214 ha3944
Text: RFHA3944 RFHA3944 65W GaN Wideband Power Amplifier 65W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features Broadband Operation Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology Peak Modulated Power >65W
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RFHA3944
RFHA3944
RF360-2
800MHz
2500MHz
-42dBc
DS121108
RFHA3944SB
RF360
IRL214
ha3944
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fujitsu hemt
Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Text: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability
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FH40LG
2-12GHz
FHC40LG
FCSI0598M200
fujitsu hemt
fujitsu transistor HEMT
fhc40lg
280AM
low noise hemt
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2N6617
Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Text: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions
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2N66170
HXTR-6101)
HXTR-6102
2N6617)
HXTR-6102)
2N6617
HPAC-70GT,
MIL-S-19500
MIL-STD-750/883.
2N6617
HXTR-6101
HXTR-6102
HXTR6102
2N6617 S parameters
HPAC-70GT
transistor HXTR-6101
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HXTR-5002
Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz
Text: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz
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HXTR-5002
HXTR-5002
HXTR-5102
HXTR-5104
SM 97
S21E
HXTR5104
HXTR 5104
s parameters 4ghz
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Hewlett-Packard application note 967
Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Text: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions
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2N66170
HXTR-6101)
HXTR-6102
2N6617)
HXTR-6102)
2N6617
HPAC-70GT,
MIL-S-19500
MIL-STD-750/883.
Hewlett-Packard application note 967
HPAC-70GT
2N6617
HXTR-6102
equivalent of transistor D 2331
hewlett packard application note 972
2N6617 S parameters
TRANSISTOR noise figure measurements application
HXTR-6101
ghz transistor
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AO9T
Abstract: 2SK1233
Text: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film
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2SK1233
AO9T
2SK1233
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Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film
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2SK1234
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2SC2644
Abstract: 2SC264
Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC2644
55MAX.
SC-43
961001EAA2'
2SC2644
2SC264
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2SC2644
Abstract: No abstract text available
Text: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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2SC2644
55MAX.
SC-43
961001EAA2'
2SC2644
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