4GHZ TRANSISTOR Search Results

fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

2N6617

Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

HXTR-5002

Abstract: HXTR-5102 HXTR-5104 SM 97 S21E HXTR5104 HXTR 5104 s parameters 4ghz
Contextual Info: NEW LINEAR POWER TRANSISTOR CHIP COMPONENTS Features - - HXTR-5002 CIRCUITS H E W L E T T ^ PACKARD 380 0.015 TYPICAL INTEGRATED HIGH P1dB LINEAR POWER 29 dBm Typical at 2GHz 27.5 dBm Typical at 4GHz HIGH ASSOCIATED GAIN 12.5 dB Typical at 2GHz 7.5 dB Typical at 4GHz

fhc40lg

Abstract: 18GHZ LG 932 fujitsu hemt
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

08/bup 3110 transistor

Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Low Noise HEMT

Abstract: Super low noise figure and high associated gain
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

fhc40lg

Abstract: 18GHZ low noise hemt FH40LG
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

ATC520L103KT16T

Abstract: ATC520L103KT16
Contextual Info: GSA504-12 InGaP HBT Gain Block Product Features Product Description ● DC to 4GHz Package The GSA504-12 is a 50 Ohm matched General Purpose Gain Block Amplifier that covers the 1MHz to 4GHz frequency range with 20dB nominal gain at 2GHz. ● +15 dBm P-1dB at 2GHz

transistor Zo 105

Abstract: 6943-3 55086 HEMT marking P 05973
Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz

AO9T

Abstract: 2SK1233
Contextual Info: SANYO SEMICONDUCTOR CORP 22E » 7T=i 707L . OOÜ bñ TB T '- 3 1 - 2 5 2SK1233 2071 N-Channel GaAs M ES FET 4GHz-Band Local OSC, Amp Applications 3162 F e a tu re s •C asting mold package • Suited for 4GHz-band local oscillator ■Adoption of high reliable protection film

6943-3

Contextual Info: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications

Contextual Info: SANYO SEMICONDUCTOR CORP SEE D GODbäi4 1 imOlh T -3 1 -2 5 2SK1234 2071 N -C h a n n e l G aA s M E S FET 4GHz-Band Local OSC, Amp Applications 3163 F e a tu r e s • C asting mold package • Suited for 4GHz-band local oscillator • Adoption of high reliable protection film

GSM repeater circuit using transistor

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

Contextual Info: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz • High Output Power P1dB = 43dBm Typ. @2.14GHz P3dB = 45dBm(Typ.)@2.14GHz • High Efficiency • High In/Out Impedance • High Power Gain G1dB = 16dB(Typ.)@900MHz G1dB = 12dB(Typ.)@2.14GHz

2SC2644

Abstract: 2SC264
Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5.1 MAX. , • • • High Gain Low IMD fp = 4GHz Typ. 0.55M AX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

BFR360

Abstract: BFR360T GPS05996
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Target Data • • • • For Low Voltage / Low Current Applications For Low Noise Amplifiers For Oscillators up to 4GHz and Pout > 10dBm Low Noise Figure : 1.1dB at 2.0GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,

transistor zo 107

Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
Contextual Info: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz

Contextual Info: RFHA3944 60W GaN WIDEBAND POWER AMPLIFIER RFHA3944 Proposed 60W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology

Contextual Info: RFHA3942 35W GaN WIDEBAND POWER AMPLIFIER RFHA3942 Proposed 35W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology

2SC2644

Contextual Info: TOSHIBA 2SC2644 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2644 Unit in mm VHF-UHF BAND WIDEBAND AMPLIFIER APPLICATIONS. 5 .1 M A X . , • • • High Gain Low IMD fp = 4GHz Typ. 0 .5 5 M A X . 0.45 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

RFHA3942

Abstract: RF360
Contextual Info: RFHA3942 RFHA3942 35W GaN Wideband Power Amplifier 35W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology  Peak Modulated Power >30W

RFHA3944SB

Abstract: RFHA3944 RF360 IRL214 ha3944
Contextual Info: RFHA3944 RFHA3944 65W GaN Wideband Power Amplifier 65W GaN Wideband Power Amplifier Package: Flanged Ceramic, 2-pin, RF360-2 Features  Broadband Operation  Tunable from DC to 4GHz Instantaneous: 800MHz to 2500MHz Advanced GaN HEMT Technology  Peak Modulated Power >65W