4FL55M52 Search Results

Contextual Info: — — : OE DE I 4fl55M52 O ü D T ö C H I O R l INTERNATIONAL RECTIFIER 4855452 *4 | INTERN ATION AL R E C T I F I E R Data Sheet No PD-3 109 U3ïa öneei l>10* r u O. Ili» ~ 02E 07809 D 7 S52K SERIES 800-200 VOLTS R A N G E 2700 AM P RMS, RING AMPLIFYING GATE

ior e78996

Abstract: E78996 ior
Contextual Info: INTERNATIONAL RECTIFIER bSE » WÊ 4055452 DDlbBll T3T • INR Bulletin E27111 International ^ 1 Rectifier IRFK6H250,IRFK6J250 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996.

Contextual Info: International I R Rectifier Provisional Data Sheet No. PD-9.1475 REPETITIVE AVALANCHE AND dv/dt RATED IRHI7460SE HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.32Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

Contextual Info: Data Sheet No. PD-9.67DA INTERNATIONAL RECTIFIER AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHG7110 N-CHANNEL RAD HARD 100 Volt, 0.7DQ, RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown

Contextual Info: Inte rna 11o na I c*»si»* no.p«.«»c l R Rectifier IR2 1 1 7 SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

Contextual Info: PD-2.445 International ¡k?r]Rectifier HFA280NJ60C Ultrafast, Soft Recovery Diode HEXFRED LUG TERM INAL A NO D E 1 Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG TERMINAL ANODE 2 V r = 600V

Contextual Info: International M Redifier pd9.i4ib IRGMH40F preliminary INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

Contextual Info: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage

Contextual Info: PD-9.998 International k? r Rectifier IRFP344 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 450 V R DS on = 0 -6 3 Q

E.78996

Abstract: E.78996 scr E 78996 78996 d114 D113 T-25 40A 1000v scr
Contextual Info: • ■ H B ■- | ■ r n a H O n a i Db3 ■ INTERNATIONAL R E C T I F I E R Rectifier Power Modules 40A Features Glass passivated junctions for greater reliability Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V DRM High surge capability

IRFIP044

Abstract: DIODE B4N S4 43a DIODE 9740 marking
Contextual Info: HÛSSHS2 001SEÔG b*4û B I N R International iQg Rectifier _ IRFIP044 INTERNATIONAL REC TIFIER HEXFET Power MOSFET • • • • • • • PD-9.740 Isolated Package DC Package lsolation= 4.0KVDC AC Package lsolation= 2.0KVRMS © Lead to Lead Creepage Dist.= 7.5mm

Contextual Info: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,