4BS54S2 Search Results

Contextual Info: | , ,• I P D -5041 International IS2R Rectifier CPV364M 4U preliminary IGBT SIP MODULE Features • • • • UltraFast IGBT Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes

5d3 diode

Abstract: A/SMD 5d3 diode
Contextual Info: PD -9.1488 International l R Rectifier IRFI9634G PRELIMINARY HEXFET Power M OSFET • • • • • • Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Voss = -250V R DS on = 1 -0Q

Contextual Info: PD 9.1623 International IGR Rectifier IRF3315 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDss = 150 V ^D S c n = Description 0.082Q

3B0 International Rectifier

Abstract: RS30F
Contextual Info: 4855452 INTERNATIONAL RECTIF I E R 02E 07894 D INTERNATIONAL RECTIFIER IOR_ 1 5 3 - ^ 3ta Slleet NO. P D -2 . Ì 0 3 ])E 14S554S2 □0D7fi'i4 □ | R23DF AND R23DFR SERIES 2000-1800 VOLTS RANGE REVERSE RECOVERY TIME 2.0/ys 150 AMP AVG STUD MOUNTED

Contextual Info: International [ragRectifier PD — IRLI2505 PRELIMINARY H EXFET^ Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Ultra Low On-Resistance • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm

10JTF10

Abstract: 10CTF40 10JTF40 10CTF10 3304N 10JTF20
Contextual Info: INTERNATIONAL RECTIFIER bSE D • 4 0 5 5 45 2 DD17bfl7 40G ■ INR Data Sheet No. PD-2.198 INTERNATIONAL RECTIFIER I«R 10CTF & 10JTF SERIES 10 Amp Ultrafast; Recovery Dual Center Tap Rectifiers Major Ratings and Characteristics 10CTF10 10CTF20 10JTF10 10JTF20