Untitled
Abstract: No abstract text available
Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.
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HYM581000B
HY514400A
22//F
HYM581000BM/BLM
1BB05-00-MAY93
4b750fifi
4b75Dflfl
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,
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HY51V4403B
050f1
1AC1S-00-MAY94
HY51V4403BJ
HY51V4403BU
HYS1V4403BSU
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Untitled
Abstract: No abstract text available
Text: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A-I
1DC02-11-MA
4b75GflÃ
1DC02-11-MAY94
4b750A
0003f
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.
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HYM536400B
36-bit
HY5116400
HYM536400BM/BLM
HYM536400BMG/BLMG
1CE05-00-MAY93
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM532100A Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532100A is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each DRAM.
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HYM532100A
32-bit
HY514400A
22/iF
HYM5321OOAM/ALM
HYM532100AMG/ALMG
1CC03-00-M
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Untitled
Abstract: No abstract text available
Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,
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HY51V4403B
576x4-bit.
HY51V4403B
1AC16-10-MAY95
HY51V4403BJ
HY51V4403BLJ
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Untitled
Abstract: No abstract text available
Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs
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16Mbit
HY57V164010-
HY57V168010-
HY57V161610-
1Mx16bit
HY57V164010,
HY57V168010,
HY57V161610
512Kbit
1SD10-Q3-NOV96
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HY53C464LS
Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
CMO442)
335ie
P-021
A02-20-MA
HY53C464LS
HY53C464F
hy53c464lf
HY53C464LF70
HY53C464S
An-313
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling
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HYM536220
36-bit
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
DQ0-DQ35)
4b750flfl
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HY62256A
Abstract: hyundai HY62256AJ55
Text: HY62256A Series • H Y U N D A I 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A
55/70/85/100ns
HY6264A-I
HY62256AP
HY62256ALP
HY62256ALLP
HY62256AJ
hyundai
HY62256AJ55
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Untitled
Abstract: No abstract text available
Text: • • H Y U N D A I H Y M 5 9 4 0 0 0 B M -S e r ie s 4M * 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22jiF decoupling
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HYM594000B
HY5117400
HY514100A
22jiF
HYM594000BM/BLM
1BC06-11-MAR94
50fifi
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Untitled
Abstract: No abstract text available
Text: HY234000 Series -H Y U N D A I 512K X 8-bit CMOS MASK ROM PRELIMINARY DESCRIPTION The HY234000 is a 4Mbit mask-programmable ROM organized as 524,288 x8bit. It is fabricated using HYUNDAI’S advanced CMOS process technology. The HY234000 operates with a 5V power supply and all inputs are i n
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HY234000
120ns
525mil
HY234000P-XXX
HY234000G-XXX
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY531000A
300mil
1AB05-10-APR93
HY531000AS
HY531000ALS
HY531000AJ
HY531000AU
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Untitled
Abstract: No abstract text available
Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words
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HY57V16161
476x16
4b75Gflfi
1SD03-00-MAY95
400mil
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: ♦HYUNDAI H Y 5 1 4 1 0 0 S e rie s 4M X 1-bit CMOS DRAM SEMICONDUCTOR DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514100
DDD14Ã
3380i8
1AC01-20-APR93
4L750flfl
HY514100J
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY514400 Series SEMICONDUCTOR 1Mx 4-bit CMOS DRAM DESCRIPTION The HY514400 is the new generation and fast dynamic RAM organized 1,048,576 x 4 bits. The HY514400 utilizes Hyundai’s C M O S silicon gate process technology a s well as advanced circuit techniques to provide wide operating
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HY514400
ai050
1AC02-30-APR93
HY514400J
00014M0
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5116100
fam35)
1AD01
-10-APR93
HY5116100JC
HY5116100UC
HY5116100TC
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY514400B
1AC11-00-MAY94
4b75Gflfl
HY514400BJ
HY514400BU
HY514400BSU
HY514400BT
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Untitled
Abstract: No abstract text available
Text: •H Y U N D A I HYM564414A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION H ie HYM564414A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY5117404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and 0.01 nF
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HYM564414A
64-bit
HY5117404A
HYM564414AKG/ATKG/ASLKG/ASL7KG
A0-A10)
DQ0-DQ63)
1CE1S-10-APR96
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Untitled
Abstract: No abstract text available
Text: HY6718110/111 HYUNDAI 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a
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HY6718110/111
486/Pentium
15ns/20ns/25ns
50MHz
486/Pentium
4b75066
1DH03-11-MAY95
HY6718110/111
4b75DÃ
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Untitled
Abstract: No abstract text available
Text: "HYUNDAI HY51V17404A Series 4M X 4-bit CMOS DRAM With Extended Data Out DESCRIPTION The H Y51V17404Ais the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V17404A
Y51V17404Ais
HY51V17404A
1AD40-00-MAY95
HY51V17404AJ
HY51V17404ASLJ
HY51V17404AT
HY51V17404ASLT
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HYM591000
Abstract: No abstract text available
Text: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted
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HYM591000A
HY514400
HY531000
HYM591000AM
0177G
1BB04-20-M
0QG1771
HYM591000
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