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Untitled Abstract: No abstract text available Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees	OCR Scan	PDF	HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi
Untitled Abstract: No abstract text available Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU
Untitled Abstract: No abstract text available Text: ‘H Y U N D A I HY534256A Series 256KX 4-bit CMOS DRAM DESCRIPTION The HY534256A is the 2nd generation and fast dynamic RAM organized 262,144 x 4-bit. The HY534256A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating	OCR Scan	PDF	HY534256A 256KX 300mil 100BSC 300BSC 3-11dÂ 1AB06-10
HY5118160 Abstract: No abstract text available Text: H Y 5 1 1 8 1 6 0 ‘H Y U N D A I S e r ie s 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5118160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide	OCR Scan	PDF	16-bit HY5118160 16-bit. HY5118160 1AD15-10-MAY94 4b75Dflfl 322fi HY5118160JC
HYM540A100MG Abstract: No abstract text available Text: “H YUN D AI HYM540A100 M-Series 1M X 40-blt CMOS DRAM MODULE DESCRIPTION The HYM540A100 is a 1M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM540A100 40-blt 40-bit HY514400A HYM540A100M/LM HYM540A100MG/LMG 00Q3M3S 1CC06-01-FEB94 HYM540A100MG
HY6264 RAM Abstract: HY6264 Hyundai Semiconductor hy6264 Hyundai I30 Hyundai HY6264 A12C HY6264-12 HY6264-15 HY6264-70 HY6264-85 Text: HYUNDAI ELECTRONICS SI E D • 4L7SOÛÔ O OOlll 5 130 « H Y N K HY6264 «H Y UNDA I SEMICONDUCTOR 8KX 8-Bit CMOS SRAM M221201B-MAY92 DESCRIPTION FEATURES The HY6264 is a high speed, low power 8,192 words by 8-bit CMOS static RAM fabrica ted using high performance CMOS process	OCR Scan	PDF	G0D1115 HY6264 HY6264 M221201B-MAY92 4b750flfl T-3-12 600MIL HY6264 RAM Hyundai Semiconductor hy6264 Hyundai I30 Hyundai HY6264 A12C HY6264-12 HY6264-15 HY6264-70 HY6264-85
5B33 Abstract: MJ002 HYM536410 HY5117400A HYM53641OAMG Text: -HYUNDAI HYM536410A M-Series 4M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY5141 OOAin 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.	OCR Scan	PDF	HYM536410A 36-bit HYM53641OA HY5117400A HY5141 HYM53641OAM/ALM/ATM/ALTM HYM536410AMG/ALMG/ATMG/ALTMG 72WIH 020f5 5B33 MJ002 HYM536410 HYM53641OAMG