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    4AM12 Search Results

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    CR04AM-12A-BA6#B00 Renesas Electronics Corporation 600V - 0.4A - Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR04AM-12A-DTB#BD0 Renesas Electronics Corporation 600V - 0.4A - Thyristor Low Power Use Visit Renesas Electronics Corporation
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    CR04AM-12A-BTB#BD0 Renesas Electronics Corporation 600V - 0.4A - Thyristor Low Power Use Visit Renesas Electronics Corporation
    CR04AM-12A-A#BD0 Renesas Electronics Corporation 600V - 0.4A - Thyristor Low Power Use Visit Renesas Electronics Corporation
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    SiTime Corporation SIT8924AM-12-33E-33.333330

    MEMS OSC XO 33.33333MHZ LVCMOS
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    JRH Electronics 527-474A-M12N

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    Renesas Electronics Corporation CR04AM-12A-TB-B00

    SCR 600V 630MA TO92-3
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    Festo SPTW-B2R-G14-A-M12

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    4AM12 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4AM12 Hitachi Semiconductor Silicon NPN Triple Diffused Original PDF
    4AM12 Hitachi Semiconductor Silicon N-Channel/P-Channel Power MOS FET Array Original PDF
    4AM12 Renesas Technology Silicon N-Channel/P-Channel Power MOS FET Array Original PDF
    4AM12 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    4AM12 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    4AM12 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    4AM12 Unknown FET Data Book Scan PDF
    4AM12-E Renesas Technology MOSFET: Enhancement Mode: N P Channel: SIP: 10-Pin Original PDF

    4AM12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SJ173

    Abstract: 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 2SJ173 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305

    4AM12

    Abstract: SP-10 Hitachi DSA0046
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 SP-10 4AM12 SP-10 Hitachi DSA0046

    Hitachi 2SJ

    Abstract: Hitachi DSA002751
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive


    Original     		PDF 4AM12 2SK971, 2SK1094 2SJ173, 2SJ176 SP-10 D-85622 Hitachi 2SJ Hitachi DSA002751

    4AM12

    Abstract: SP-10 Hitachi DSA00316
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1210 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A


    Original     		PDF 4AM12 ADE-208-1210 SP-10 4AM12 SP-10 Hitachi DSA00316

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • • • • •


    Original     		PDF 4AM12 Hitachi DSA002787

    4AM12

    Abstract: SP-10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    2SC 8550

    Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
    Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4


    Original     		PDF 3SK309 3SK317 3SK318 BB101C BB102C BB301C BB302C BB304C BB305C BB501C 2SC 8550 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545

    Untitled

    Abstract: No abstract text available
    Text: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive


    OCR Scan     		PDF 4AM12 2SJ173

    4AM12

    Abstract: 2SJ173 2SJ176 2SK1094 2SK971 2SK109
    Text: HITACHI 4AM12 S ILIC O N N -C H A N N E L /P -C H A N N E L POW ER M O S FET ARRAY HIGH SPEED POWER SWITCHING • FEATURES • L o w O n-R esistance N -c h a n n e l: RD£ on £ 0.075 Q, V cs - 10 V, l„ - 4 A P -ch a n n e l: Ros (on) £ 0.12 Q, VGS — -10 V,


    OCR Scan     		PDF 4AM12 2SK971, 2SK1094 2SJ173. 2SJ176 sp-10) 7\i-25 2SK971 2SJ173 2SK971 2SK109

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    FHX04FA

    Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
    Text: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop


    OCR Scan     		PDF 3SK38 3SK38A 3SK71 4AK15 4AK16 4AK17 60/115nstyp 2SK971/2SJ173 6AM13 CXD7500M FHX04FA FHR10X 3SK38 FHR01FH FHX05FA NEC 2501L

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2SK1778

    Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2SK971 2SK970 2SK972 2SK973 2SK975 4AK16 4AK17 4AK18

    HITACHI Power MOSFET Arrays

    Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 HITACHI Power MOSFET Arrays 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973

    6AM12

    Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 SP-12 6AM11 2SK970 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17