4AS54S5 Search Results

PJ2519

Abstract: S16C 10BS ASO1 IQR 2400 mex 83 pj-25 S15C
Contextual Info: 4855452 INTERNATIONAL R E C T I FI ER 05 Data Sheet No. PD-3.116 in t e r n a t io n a l r e c t i f i e r IO R DE I 4AS54S5 DDOTST? 4 | T-25-19 S15C & S15CH SERIES 400-200 VOLTS RANGE 140 AMP RMS, CENTER GATE PHASE CONTROL TYPE STUD MOUNTED SCRs VOLTAGE RATINGS

T2D 87 diode

Abstract: T2D 49 DIODE Rectifier t2d
Contextual Info: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAO HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs

Contextual Info: 4655452 DQmSflM Q4R • INR PD-9.455D International ioR R ectifier _ IRC830 INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: INT ERN AT IO NAL RECTIFIER 4T Dl F 4f i554S2 0004744 S Data Sh eet No. PD-3.067 IN T E R N A T IO N A L R E C T I F I E R I O R -r*ss-£Q 1410A, 1 100A RMS Hockey Puk Thyristors 900PE, 700PE SERIES Description The 700PE and 900 P E series o f converter type hockey puk thyristors

2388 jrc

Abstract: jrc 2368 2388 84 JRC 700PE20 900PE20 RS-397 700PE120
Contextual Info: INTERNA TIO NAL RECTIFIER MT dËTJ 4 0 5 5 4 5 2 D004744 Data Sh eet No. PD-3.067 IN T E R N A T IO N A L IOR R E C T IF IE R - T - S S ' - A O 1410A, 1100A RMS Hockey Puk Thyristors 9 0 0 P E , 7 0 0 P E S E R IE S Description The 700PE and 900PE series of converter type hockey puk thyristors

IRGTIN075M12

Abstract: diode C546 C541 DIODE DIODE C545 irgtin igb1 diode c544 Diode C541
Contextual Info: International P r]Rectifier PM1,H' IRGTIN075M12 "HALF-BRIDGE" IGBT INT-A-PAK Low conduction loss IGBT Half-Bridge p i f-o 3 VCE= 1200V 4o— 1|^ , lc = 7 5 A 5=— -4_ •Rugged Design ■Simple gate-drive ■Switching-Loss Rating includes all “tail"

IRF620

Contextual Info: HE D I 4055*452 GOGflMflQ Ü | 3 7 -"tf Data Sheet No. PD-9.317G INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET’ TRANSISTORS IOR IRF620 IRF621 'd IRF6SS N-Channel Ls 200 Volt, 0.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International Rec­

Contextual Info: PD-2.454 International SRectifier HFA160MD40C Ultrafast, Soft Recovery Diode HEXFRED" Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters LUG LUG LI JG TERMINAL TER «INAL TERMINAL ANODE 1 CAT1-IOOE ANODE 2

AVL 5M 03 300

Abstract: D1P 22 16B diodo 1000A diodo 1000A 1200V taig S23AF12A 15a negetive diode
Contextual Info: INTERNATIONAL RECTIFIER IlO R 73 dT | 4ÛSS4SS □□□7001 0 Data Sheet No. PD-3.156 in t e r n a t io n a l r e c t if ie r S23AF SERIES 1200-1000 VOLTS RANGE STANDARD TURN-OFF TIME 16 /j s 380 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs

C268

Contextual Info: International [^Rectifier PD - 9.767A IRGPF50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all “tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International SRectifier Data Sheet No. PD-6.019D IR2130 3-PHASE BRIDGE DRIVER Features channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V ■ F lo atin g

N mosfet 100v 200A

Contextual Info: International lira] Rectifier PD-9.813 IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • • • • • • Electrically Isolated Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast operation > 10 kHz