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    49A SMA Search Results

    49A SMA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-058SMAX200-002 Amphenol Cables on Demand Amphenol CO-058SMAX200-002 SMA Male to SMA Male (RG58) 50 Ohm Coaxial Cable Assembly 2ft Datasheet
    CO-174SMAX200-007 Amphenol Cables on Demand Amphenol CO-174SMAX200-007 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 7ft Datasheet
    CO-316SMAX200-004 Amphenol Cables on Demand Amphenol CO-316SMAX200-004 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 4ft Datasheet
    CO-174SMAX200-003 Amphenol Cables on Demand Amphenol CO-174SMAX200-003 SMA Male to SMA Male (RG174) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-316SMAX200-001 Amphenol Cables on Demand Amphenol CO-316SMAX200-001 RG316 High Temperature Teflon Coaxial Cable - SMA Male to SMA Male 1ft Datasheet
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    49A SMA Price and Stock

    Micro Commercial Components SMAJ4749A-TP

    Zener Diodes 1.0W 24V
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    Mouser Electronics SMAJ4749A-TP 7,367
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    PanJit Semiconductor 1SMA4749-AU_R1_000A1

    Zener Diodes 1000mW,ZENER,SMA,24V
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    Mouser Electronics 1SMA4749-AU_R1_000A1
    • 1 $0.28
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    • 1000 $0.126
    • 10000 $0.069
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    Micro Commercial Components SMAJ4749AQ-TP

    Zener Diodes
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    Mouser Electronics SMAJ4749AQ-TP
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    49A SMA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75329p

    Abstract: 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 File Number 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G HUF75329P3 HUF75329S3ST TB334 75329S HUF75329G3 HUF75329S3S 75329

    Untitled

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel tm PowerTrench SyncFETTM 30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS

    AN7254

    Abstract: AN7260 AN9321 AN9322 HRFZ44N TB334
    Text: HRFZ44N Data Sheet December 2001 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HRFZ44N AN7254 AN7260 AN9321 AN9322 HRFZ44N TB334

    FDMS8660AS

    Abstract: No abstract text available
    Text: FDMS8660AS N-Channel PowerTrench SyncFET tm TM 30V, 49A, 2.1mΩ Features General Description „ Max rDS on = 2.1mΩ at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS

    Untitled

    Abstract: No abstract text available
    Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HRFZ44N TA75329or

    FDMS8660AS

    Abstract: 4410 mosfet fairchild top marking fdms8660
    Text: FDMS8660AS N-Channel PowerTrench SyncFET TM tm  30V, 49A, 2.1m: Features General Description „ Max rDS on = 2.1m: at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and


    Original     		PDF FDMS8660AS FDMS8660AS 4410 mosfet fairchild top marking fdms8660

    75329G

    Abstract: 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329G 75329P 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334

    75329p

    Abstract: 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST
    Text: HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75329G3, HUFA75329P3, HUFA75329S3S 75329p 75329G HUFA75329S3S TB334 75329S HUFA75329G3 HUFA75329P3 HUFA75329S3ST

    5A66

    Abstract: No abstract text available
    Text: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement


    Original     		PDF N5700 N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A 5989-1330EN 5A66

    N5765A

    Abstract: N5741A N5700 N5747A N5740A N5746 N5752A N5766A N5770A Xantrex
    Text: Agilent N5700 Series System DC Power Supplies Models: N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A Data Sheet • 24 Models: 750 W and 1500 W output power • Up to 600 V and up to 180 A • Small high density 1 U package • Built-in voltage and current measurement


    Original     		PDF N5700 N5741A-49A, N5750A-52A, N5761A-69A, N5770A-72A com/find/N5700 5989-1330EN N5765A N5741A N5747A N5740A N5746 N5752A N5766A N5770A Xantrex

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDI150N10 O-262

    Untitled

    Abstract: No abstract text available
    Text: FDMS8662 N-Channel tm PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description „ Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS8662 FDMS8662

    FDP150N10

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDP150N10 O-220 FDP150N10

    FDB150N10

    Abstract: marking 49a
    Text: FDB150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDB150N10 FDB150N10 marking 49a

    FDMS3500

    Abstract: No abstract text available
    Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5mΩ Features General Description „ Max rDS on = 14.5mΩ at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS3500 FDMS3500

    Untitled

    Abstract: No abstract text available
    Text: FDMS3500 tm Trench N-Channel Power MOSFET 75V, 49A, 14.5m: Features General Description „ Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS3500

    FDMS3500

    Abstract: No abstract text available
    Text: FDMS3500 tm N-Channel Power Trench MOSFET 75V, 49A, 14.5m: Features General Description „ Max rDS on = 14.5m: at VGS = 10V, ID = 11.5A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS3500 FDMS3500

    FDMS8460

    Abstract: No abstract text available
    Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS on = 2.2m: at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has


    Original     		PDF FDMS8460 FDMS8460

    Untitled

    Abstract: No abstract text available
    Text: FDMS3662 tm Trench N-Channel Power MOSFET 100V, 49A, 14.8m: Features General Description „ Max rDS on = 14.8m: at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS3662

    pd25a

    Abstract: FDMS8460
    Text: FDMS8460 tm N-Channel Power Trench MOSFET 40V, 49A, 2.2mΩ Features General Description „ Max rDS on = 2.2mΩ at VGS = 10V, ID = 25A „ Advanced Package and Silicon combination for low rDS(on) This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has


    Original     		PDF FDMS8460 FDMS8460 pd25a

    Untitled

    Abstract: No abstract text available
    Text: FDMS5352 tm Trench N-Channel Power MOSFET 60V, 49A, 6.7m: Features General Description „ Max rDS on = 6.7m: at VGS = 10V, ID = 13.6A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		PDF FDMS5352

    Untitled

    Abstract: No abstract text available
    Text: FDP150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 15mΩ Features General Description • RDS on = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		PDF FDP150N10 O-220 FDP150N10

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDI150N10 O-262 FDI150N10

    FDMS8662

    Abstract: 207 fairchild
    Text: FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m: Features General Description „ Max rDS on = 2.0m: at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest


    Original     		PDF FDMS8662 FDMS8662 207 fairchild