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    onsemi FDI150N10

    Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-262 Rail - Rail/Tube (Alt: FDI150N10)
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    onsemi EBMFDI150N10

    Trans MOSFET NCH 100V 57A 3Pin3Tab TO262 Rail (Alt: FDI150N10)
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    EBV Elektronik EBMFDI150N10 23 Weeks 50
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    FDI150N10 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDI150N10 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 57A I2PAK Original PDF

    FDI150N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features General Description • RDS on = 12 mΩ ( Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDI150N10 FDI150N10 PDF

    FDI150N10

    Abstract: No abstract text available
    Text: FDI150N10 tm N-Channel PowerTrench MOSFET 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDI150N10 O-262 FDI150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET 100 V, 57 A, 16 mΩ Features Description • RDS on = 12 mΩ (Typ.) @ VGS = 10 V, ID = 49 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		FDI150N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: FDI150N10 N-Channel PowerTrench MOSFET tm 100V, 57A, 16m Features General Description • RDS on = 12m ( Typ.) @ VGS = 10V, ID = 49A • Fast switching speed • Low gate charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDI150N10 O-262 PDF