48DBM Search Results

DS110505

Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

P0110009P

Abstract: gaas fet marking a ISO-14001 KP029J P0120009P RR0816 48dBm High power fet 2.4ghz
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package

Contextual Info: RFSA2644 RFSA2644 Serial Controlled Digital Step Attenuator SERIAL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 6-BIT, 0.5dB LSB High Linearity, IP3 >48dBm  3V and 5V Logic Compatible  Serial-to-Parallel Controller  Serial Programming Interface

TIM3536-60

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM 3536-60 FEATURES : •HIGH POWER ■ P1dB=48dBm ■ HIGH at 3 . 5 GH z to ■ at 3 . 5 GH z to HERMETICALLY ELECTRICAL CHARACTERISTICS PACKAGE > > CO o Il II Z Û Ul MIN. 47.0 TYP.

siemens g52

Abstract: LT5554
Contextual Info: LT5554 Broadband Ultra Low Distortion 7-Bit Digitally Controlled VGA DESCRIPTION FEATURES n n n n n n n n n n n 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω –88dBc IMD3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω 1.4nV/√Hz Input-Referred-Noise RTI

Contextual Info: RFSA2514 RFSA2514 Serial Controlled Digital Step Attenuator 50MHz to 4000MHz, 5Bit, 0.5dB LSB SERIAL CONTROLLED DIGITAL STEP ATTENUATOR 50MHz TO 4000MHz, 5-BIT, 0.5dB LSB High Linearity, IIP3 >48dBm  3V and 5V Logic Compatible  Serial-to-Parallel Controller

920MHz

Abstract: RFMD PA LTE class c tuned amplifier
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

LT5554

Contextual Info: News Release  www.linear.com Broadband, Super-Low Distortion Digitally Programmable IF VGA Improves Signal Integrity Performance MILPITAS, CA – December 16, 2008 – Linear Technology introduces the LT5554, a broadband digitally programmable gain IF amplifier, featuring a 48dBm OIP3 output 3rd order intercept at

variable attenuator at 15GHz with input power 12dBm

Abstract: bpf 200mhz LT5554 siemens g52 ETC1-1-13 LT5514 LTC5508 LT5570
Contextual Info: LT5554 Broadband Ultra Low Distortion 7-Bit Digitally Controlled VGA DESCRIPTION FEATURES n n n n n n n n n n n 1GHz Bandwidth at all Gains 48dBm OIP3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω –88dBc IMD3 at 200MHz, 2VP-P into 50Ω, ROUT = 100Ω 1.4nV/√Hz Input-Referred-Noise RTI

lte RF Transceiver 450MHz

Abstract: RFPA3800 RFMD LTE transceiver class c tuned amplifier RFPA3800PCK-410 RFPA3800PCK-411 RFPA3800SQ 5W amplifier tone RFPA3800TR7 RFMD PA LTE
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation

UMK105cg

Abstract: 500R07S1R2 GSM WCDMA repeater circuit LQP15MN 500R07S RFMD PA LTE DS120611 RFPA3800 500r07 MuRata Electronics Kamaya
Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency    Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation

11293

Contextual Info: HWF1688RA HSXAWAVS High Power GaAs FET September 1998 Rev.B Features • High Output Power PidB=36.5dBm typ. @2.4GHz • High Gain G l= OUTLINE DRAWING 12.5dB(typ.)@2.4GHz 1.625(0.065) • High Efficiency T|add =40%(typ.)@2.4GHz • High Linearity IP3=48dBm(typ.)@2.4GHz

Contextual Info: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=3.2dB at 945MHz  5V to 7V Operation

P0110009P

Abstract: Susumu RL series part Marking KP029J P0120009P RR0816 marking c7 sot-89
Contextual Info: P0120009P Technical Note 2W GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +31 dBm output power · Up to +48dBm Output IP3 · High Drain Efficiency · 11dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

Contextual Info: HWF1682CM HSXAWAVE High Power GaAs FET August 1998 Rev. A Features • High O u tp u t Pow er O U TLIN E D R A W IN G Pi<ffi=37dBm typ. @2.4GHz • High G ain 17.50 Gl= 12.5dB(typ.)@2.4GHz • High Efficiency • High L inearity Tjadd =40%(typ.)@2.4GHz IP3=48dBm(typ.)@2.4GHz

LTC3300

Abstract: LTspice DIODE ZENER 3.1V 250mW LTC3105 supercapacitor spice balancing circuit for supercapacitor thermoelectric generator model reports LTM8047 ltc4425 Sanyo supercapacitors
Contextual Info: January 2012 I N T H I S I S S U E integer-N synthesizer with integrated VCO in a 4mm x 5mm package 9 supercapacitor-based power supply ride-through system 15 ultralow-EMI, µModule Volume 21 Number 4 Dual Output DC/DC Controller Combines Digital Power System

Contextual Info: ALM-32120 0.7GHz – 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Features Avago Technologies’ ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain compression point, achieved through the

EFA480C-SOT89

Contextual Info: Excelics EFA480C-SOT89 DATA SHEET DC-4GHz Low Distortion GaAs Power FET Features     '5$,1 6285&     (Top View All Dimensions In Mils Applications • •  $ &# *$7( • • • LOW COST SURFACE-MOUNT PLASTIC PACKAGE

TRANSISTOR R1002

Abstract: R1002 TRANSISTOR R1002 84-1LMI XR1002
Contextual Info: 20.0-32.0 GHz GaAs MMIC Receiver R1002 October 2001 - Rev 10/05/01 Features Chip Device Layout y 20.0-32.0 GHz Frequency Range High Dynamic Range Receiver +4.0 dBm Third Order Intercept 3.0 dB Typical Noise Figure 18.0 dB Typical Image Rejection 100% On-Wafer RF and DC Testing

RF2316

Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures
Contextual Info: TA0015  TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data

12v 100w AUDIO AMPLIFIER CIRCUIT

Contextual Info: OPA 3695 OPA3693 www.ti.com . SBOS353A – DECEMBER 2006 – REVISED AUGUST 2008 Triple, Ultra-Wideband, Fixed-Gain,

ACL MARKING

Contextual Info: OPA846 OPA OPA84 846 6 SBOS250A – JULY 2002 – REVISED MARCH 2003 Wideband, Low-Noise, Voltage-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● HIGH BANDWIDTH: 400MHz G = +10 ● HIGH DYNAMIC RANGE ADC PREAMPS ● LOW-NOISE, WIDEBAND, TRANSIMPEDANCE

KESTX01

Abstract: KESTX02
Contextual Info: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a

Contextual Info: TGA2312-FL X-band 60W GaN Power Amplifier Applications • Commercial and Military Radar  Communications Product Features         Functional Block Diagram Frequency Range: 9 – 10 GHz PSAT : 48 dBm PAE: 38% Small Signal Gain: 13 dB