48F512 Search Results

Contextual Info: seeQ 48F512 5 1 2 K F L A S H E E P R O M PRELIMINARY DATA SHEET M y 1989 Description Features • 64K Byte Flash Erasable Non-Volatile M em ory ■ Lo w Power CMOS P rocess ■ E le ctrica l B yte W rite a n d C hip/Sector Erase The 48F512is a 512Kbit CMOS FLASH EEPROM organ¡zed as 6 4 K x8 b its. SEEQ'48F512 brings together the

Contextual Info: S E E <3 TECHNOLOGY INC l^E D • f l i n a i 3 G G 05425 Ü 48F512 512K FLASH EEPROM July 1989 PRELIMINARY DATASHEET Description Features ■ ■ ■ ■ ■ ■ m ■ U ■ n 64K Byte Flash Erasable Non-Volatile Memory Low Power CMOS Process Electrical Byte Write and Chip/Sector Erase

288-BIT

Contextual Info: ADVANCE INFORMATION Semiconductor 48F512 National 48F512 524,288-Bit 64k x 8 CMOS FLASH EEPROM General Description Features The N M C 48F512 is a high speed e lectrically erasable and program m able read only m emory, ideal fo r on-line, in-sys­ tem firm w are m odifications. The NM C 48F512 com bines the

48F512

Contextual Info: seeQ 48F512 512K FLASH EEPROM PRELIMINARY DATA SHEET July 1989 Features Description • 64K Byte Flash Erasable Non-Volatile Memory ■ Low Power CMOS Process ■ Electrical Byte Write and Chip/Sector Erase ■ Input Latches for Writing and Erasing The 48F512is a 512Kbit CMOS FLASH EEPROM organ­

D28F512

Abstract: flash eeprom D28F010
Contextual Info: SEEQ TECHNOLOGY FLASH EEPROM ALTERNATE SOURCE DIRECTORY Alternate Manufacturer INTEL INTEL NATIONAL NATIONAL Functionally Configuration Part# 6 4KX8 128K X 8 64KX8 128K X 8 D28F512 D28F010 48F512 MC48F010 1024K Flash EEPROM Technology, Incorporated 2-1 Equivalent

SEEQ eeprom

Contextual Info: SEES TECHNOLOGY INC 11E D 011=1233 GQ0S7S4 3 E/48F512 512K CMOS FLASH EEPROM • 'T W & - r 2 » - z - 7 October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ n ■ ■ ■ m ■ 64K Byte Flash Erasable Non-Volatile Memory FLASH EEPROM Cell Technology

47F512-200

Abstract: 47F512-250 47F512-300 48F512-200 48F512-250 48F512-300 E47F512-250 E47F512-300 E48F512-200 E48F512-250
Contextual Info: — 130 — 2 8 F 5 12 X 4 •■/ * > %. i&SEIE a 45 CC TAAC max <ns) TCAC max ns) TOH max (ns) TOE (ns) TOD max (ns) VDD (V) m ft i\/n A 1 DD/STANDBY (mA) VII max (V) VIH min (V) Ci max (pF) V O L / 1 VOL max (V/raA) % € «5 VOH/IVOH min (V/jiA) Co

Contextual Info: E/48F512 0 0 0 Q 512K CMOS FLASH EEPROM PR ELIM IN A R Y D A TA S H EET O ctober 1989 Block Diagram Features • 6 4 K B yte Flash E rasable N on-Volatile M em ory ■ F LA SH E E P R O M C ell Technology ■ E lectrical C hip a n d 512 B yte Sector Erase

Contextual Info: S@@Q E/48F512 512K CMOS FLASH EEPROM PRELIMINARY DATA SHEET October 1989 Block Diagram Features • ■ ■ ■ ■ ■ ■ 64K Byte Flash Erasable Non-Volatile Memory FLASH EEPROM Cell Technology Electrical Chip and 512 Byte Sector Erase Input Latches for Writing and Erasing