asus
Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
Text: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;
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DDR2-800MHz
4800mAH
2400mAH
4800mAH;
7200mAH
7200mAH;
638pin
TL-50/52/56/60)
asus
FA8142
PT8300
RS690M ATI M76-M
m64m
H5401
PT8700
M64-M
ATXP1
8632e
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PDF
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BRS105
Abstract: No abstract text available
Text: Data Sheet Model No.: 160CK Type : Rechargeable Nickel Cadmium Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 26.2mm H = 50.0mm : Recommended discharge current 320 to 4800mA Voltage (V) 1.6 Nominal Voltage : 1.2V 1.4 Nominal Capacity : Minimim : 1600mAh
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160CK
4800mA
1600mAh
1680mAh
320mA
160mA
800mA
10-20mV
800mA
BRS105
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage
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NRS8030T2R2NJGJV
4900mA,
4800mA
AEC-Q200
1000pcs
100kHz
4900mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage
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Original
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NRS8030T2R2NJGJV
4900mA,
4800mA
AEC-Q200
1000pcs
100kHz
4900mA
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PDF
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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NRS8030T2R2NJGJ
4900mA,
4800mA
1000pcs
100kHz
4900mA
60MHz
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PDF
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GP160AAHC
Abstract: No abstract text available
Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage
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Original
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GP160AAHC
4800mA
1550mAh
1600mAh
320mA
160mA
800mA
1600mA
GP160AAHC
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PDF
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NRS8030T
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions
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Original
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NRS8030T2R2NJGJ
4900mA,
4800mA
1000pcs
100kHz
4900mA
60MHz
NRS8030T
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PDF
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ASUS
Abstract: M64-M ATI M64-M H5401 U4100 f3K inverter U2900 TPA6017 RS690M f7kr
Text: 5 4 3 2 1 */ &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. PAGE 29 Dual Channel DDR2 DDR2-800MHz D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;
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Original
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DDR2-800MHz
4800mAH
2400mAH
4800mAH;
7200mAH
7200mAH;
638pin
TL-50/52/56/60)
1600MT/s
ASUS
M64-M
ATI M64-M
H5401
U4100
f3K inverter
U2900
TPA6017
RS690M
f7kr
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage
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Original
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GP160AAHC
4800mA
1550mAh
1600mAh
320mA
160mA
800mA
1600mA
|
PDF
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GP160AAHC
Abstract: CQS3361 GP rechargeable battery GP BATTERY
Text: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage
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Original
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GP160AAHC
4800mA
1550mAh
1600mAh
320mA
160mA
800mA
1600mA
20min
GP160AAHC
CQS3361
GP rechargeable battery
GP BATTERY
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PDF
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XP1073-BD
Abstract: xp1073 DM6030HK XP107
Text: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing
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P1073-BD
16-Feb-10
MIL-STD-883
XP1073-BD
XP1073-BD
xp1073
DM6030HK
XP107
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PDF
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4800MAH
Abstract: No abstract text available
Text: DLG BATTERY CO. LTD Data Sheet Model No: Document Number DRS-187-S rev: 0 Type: Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension : <5=14.5mm with sleeve H=50.5mm Applications: Recommended discharge current 235 to 7050 mA Nominal Voltage:
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OCR Scan
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AA250J
DRS-187-S
2350mAh
2500mAh
250mA
1200mA
IEC61951-2
25Cx2hrs20mins
4800MAH
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PDF
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Untitled
Abstract: No abstract text available
Text: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache
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OCR Scan
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DM4M32SJ6
454-Gbyte/sec
DM4M32SJ
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PDF
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Untitled
Abstract: No abstract text available
Text: LUXEON MZ Best combination of brightness, uniformity and luminance enabling precision light control Introduction LUXEON MZ emitters are illumination grade LEDs designed to enable indoor, outdoor and industrial applications with all of the features of LUXEON M including the identical solder footprint, but allowing for tighter beam control
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DS136
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PDF
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Untitled
Abstract: No abstract text available
Text: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
Drain-40
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PDF
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FLM3742-18F
Abstract: 4532 fet
Text: FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω
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FLM3742-18F
-46dBc
FLM3742-18F
4532 fet
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PDF
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FLM3135-18F
Abstract: No abstract text available
Text: FLM3135-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 32.0dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω
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FLM3135-18F
-45dBc
FLM3135-18F
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PDF
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FLM5964-18DA
Abstract: 5964-18DA 5964-18D
Text: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz
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FLM5964-18DA
-45dBc
5964-18D
FLM5964-18DA
5964-18DA
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PDF
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FLM5359-18F
Abstract: No abstract text available
Text: FLM5359-18F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω
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FLM5359-18F
-46dBc
FLM5359-18F
Pow4888
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PDF
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U/25/20/TN26/15/850/FLM6472-18DA
Abstract: No abstract text available
Text: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q
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OCR Scan
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FLM6472-18DA
-45dBc
FLM6472-18DA
VD-164
U/25/20/TN26/15/850/FLM6472-18DA
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PDF
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FLM7177-18DA
Abstract: T-34038
Text: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q
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OCR Scan
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FLM7177-18DA
-45dBc
FLM7177-18DA
Symbo474
T-34038
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PDF
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aeg 3589
Abstract: 1 928 404 072
Text: FLM4450-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 4.4 ~ 5.0 GHz Impedance Matched Zin/Zout = 50W
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FLM4450-18F
-46dBc
FLM4450-18F
FCSI0499M200
aeg 3589
1 928 404 072
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PDF
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P240C
Abstract: P-240C 0033C 35C6
Text: INDIVIDUAL DATA SHEETS Typical Charge Characteristics P-240C C size KR26/50 Type: N Dimensions (with tube) (mm) 1.8 Voltage (V) 1.7 +0 25.8 - 1.0 (+) 1.6 0˚C 1.5 20˚C 1.4 1.3 45˚C 1.2 1.1 25.8 +- 01.0 Charge : 240mA(0.1C)x 15hrs. 1.0 0.9 (+ ) 3 6 9 12
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P-240C
KR26/50)
240mA
15hrs.
800mA
120mA
30hrs.
45hrs.
7200mA
4800mA
P240C
0033C
35C6
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PDF
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PAGE12
Abstract: PAGE13 QKR032-D MLB-451616-0060P-N1 6090R
Text: MAG.LAYERS Scientific- Technics Co., Ltd. MLB-451616-0060P-N1 Reliability Report TEL：886-3-5972488 Fax ：886-3-5972477 http：//www.maglayers.com.tw MAG. LAYERS Scientific-Technics Co., Ltd. TEL：886-3-5972488 Fax：886-3-5972477 http：//www.maglayers.com.tw
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MLB-451616-0060P-N1
TEL886-3-5972488
Fax886-3-5972477
PAGE12
PAGE13
QKR032-D
MLB-451616-0060P-N1
6090R
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PDF
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