472A Search Results

K646

Abstract: NASA Group 100BC
Contextual Info: MIL-M-38510/472A NASA 9 Auqust 1983 w E T R S E ï ï n r c r -MIL-M-38510/472(NASA) 20 J u n e 1980 I Q U A L I F I CA T I O N | I REQUIREMENTS I 1 REMOVED I MILITARY SPECIFICATION M I C R O C I R C U I T S , D I G I T A L , CMOS, 512 WORD x 8 - B I T S T A T I C READ ONLY MEMORY (ROM)

marking code MOG 8

Contextual Info: ADVANCE 2, 4 MEG X 72 SDRAM DIMMs m ic r o n I TEC H N O LO G Y, M C. SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT 18LSD(T)472A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

Contextual Info: ADVANCE 2, 4 MEG X 72 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • Utilizes 83 and 100 MHz SDRAM components

tc 97101

Abstract: 5 PEN PC TECHNOLOGY advance oQ26
Contextual Info: ADVANCE M lf~ a n M 1 2, 4 M EG BURST EDO DRAM MODULE M T9LD 272A B, M T18LD 472A B 72 B U RST EDO DRAM M O D ULES X 2, 4 MEG x 72 16, 32 MEGABYTE. NONBUFFERED, 3.3V, ECC, 8 CAS, BURST EDO FEATURES • • • • • • PIN ASSIGNMENT Front View 168-Pin DIMM

ADE-208-472A

Abstract: "marking code Z" "0.6"V Hitachi DSA002750
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472A Z 2nd. Edition November. 1996 Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

HN62435

Abstract: HN62435FA-12 HN62435FA-15 HN62435P-12 HN62435P-15 HN62435TT-12 HN62435TT-15 Hitachi DSA0077 Hitachi DSA00777
Contextual Info: ADE-203-472A Z HN62435 Series 262144-word x 16-bit/ 524288-word × 8-bit CMOS Mask Programmable ROM Rev. 1.0 Nov. 16, 1995 The HN62435 is a 4-Mbit CMOS maskProgrammable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Ordering Information

cj cl a17

Contextual Info: ADE-203-472A Z HN62435 Series 262,144-word x 16-bit / 524,288-word x 8-bit CMOS Programmable Mask ROM U IT Ä P U I• I r i I I I The HN62435 is a 4-Mbit CMOS Programmable Mask ROM organized either as 262,144 words by 16 bits or 524,288 words by 8 bits.

SH7750

Abstract: SH7750R SH7750S SH7751 SH7751R Hitachi DSA00206
Contextual Info: date: 2003/03/28 HITACHI SEMICONDUCTOR TECHNICAL UPDATE Classification of Production THEME No MPU Manual correction about the package dimensions of SH7750/SH7751 Classification of Information 1. 2. 3. 4. 5. TN-SH7-472A/E Rev Spec change Supplement of Documents

12vdc Buzzer

Abstract: buzzer 12VDC EFM-472 EFM-472ML EFM-472A EFM-472AL 472A
Contextual Info: TEFM-472 472A,472ML,472AL Piezo Buzzer EFM-472, EFM-472A, EFM-472ML, EFM-472AL FEATURES: ● Low voltage ● high output Low current consumption ● DIMENSIONS: (Unit: mm) CHARACTERISTICS: EFM-472, 472A EFM-472ML, 472AL ELECTRICAL SPECIFICATIONS : Model No.

"Piezo Buzzer"

Abstract: EFM-472A2 12VDC P0417
Contextual Info: EFM-472A2 Piezo Buzzer EFM-472A2 FEATURES: ● Low voltage high output ● Low current consumption ● DIMENSIONS: Unit: mm CHARACTERISTICS: ELECTRICAL SPECIFICATIONS : Model No. Min. Sound Pressure Level (dB) EFM-472A2 100 /12VDC/30cm Rated Voltage (VDC)

Contextual Info: ADVANCE M IC R O N 2, 4 MEG X 72 SDRAM DIMMs SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES Li □□□□□□□□□ iimwuiJ i.umumiimtmmmi iimmiimmmiiiiniijll.ilmiiiiiiWI SYMBOL PIN SYMBOL 1 2 Vss 43 Vss DOO 44 DU 3 DQ1 45 S2# 4 DQ2

Contextual Info: ADVANCE 2, 4 MEG X 72 SDRAM DIMMs MICRON I TECHNOLOGY, INC. SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JED EC-standard 168-pin, dual in-line m em ory module (DIMM) • Utilizes 83 and 100 M H z SDRAM com ponents

MD1224

Contextual Info: HN62435 Series 262144-word x 16-bit/524288-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-472A Z Rev. 1.0 Nov. 16, 1995 Description The HN62435 is a 4-Mbit CMOS mask-Programmable ROM organized either as 262144 words by 16 bits or 524288 words by 8 bits. Realizing a access speed o f 120/150 ns (max) depend upon technology o f a high

Contextual Info: Surface Acoustic Wave Filter SAW Filter TQS-472AA-7R Features Application Miniature size : 7.0(W) x 5.0(D) x 1.5 max.(H) mm High attenuation High selectivity IF filter for W-CDMA B/S system Specifications TQS-472AA-7R min. typ. Nominal frequency [fo] max.

48LC

Abstract: MT18LSDT472
Contextual Info: ADVANCE 2. 4 M E G X 72 S D R A M DIM Ms |U |IC = R O N SYNCHRONOUS DRAM MODULE MT9LSD T 272A MT18LSD(T)472A FEATURES OPTIONS (DE-7) 2 Meg x 72 TSOP (shown), (DE-8) 4 Meg x 72 TSOP, (DE-27) 2 Meg x 72 SOJ, (DE-28) 4 Meg x 72 SOJ MARKING • Components SO J

SA266M

Abstract: MT18LSD472AG10A
Contextual Info: 2’4 M E Gx72 MICRON I SDRAM DIMMs TECHNOLOGY, INC. MT9LSD T 272A MT18LSD(T)472A SYNCHRONOUS DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC-standard 168-pin, dual in-line memory module (DIMM) • PCI00-compliant functionality (-10A) • Utilizes 83 MHz, 100 MHz and 125 MHz SDRAM

pj 87 diode

Abstract: ICF CP 1005 pj 57 diode marking c260 UZ113 2SC3012 54HC30 si 13003 SR 13003 SR 13003 b
Contextual Info: MIL-M-38510/650A 22 M a y 19 87 SUPERSEDING M I L - M -38510/650 2 5 A u g u s t 1985 r s MILITARY SPECIFICATION M I C R O C I R C U I T S , D I G I T A L , H I G H S P E E D , C M OS , NAND GATES MONOLITHIC SILICON, POSITIVE LOGIC T h i s s p e c i f i c a t i o n is a p p r o v e d f o r u s e by all D e p a r t ­

Contextual Info: r z 7 ^7# M54/M74HC192 MQ[R] a i[LiOlI[HmD(gs_ M54/M74HC193 S G S -T H O M S O N HC192 - SYNCHRONOUS UP/DOWN DECADE COUNTER HC193 - SYNCHRONOUS UP/DOWN BINARY COUNTER • HIGHSPEED fMAx = 54 MHz (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C

Contextual Info: 0U| 1X6 o |oul |o x U0J3|1/\| ‘9 6 6 1. eo ito u suoiiE o^ioeds io s p n p o jd e B u e ijo o i m 6u e q i s e A ie s e j ‘ ou| ‘À6o|ouLjoej_ u o jo i^ I 96/1.1. ''© y - g w d 09|/\ld SIMIMIQ IW d Q p®J©^nquof\] ZL * 8 ‘t ‘Z y A|uo uo|sj0a a|/\|t?g ,

001C

Abstract: 68B4
Contextual Info: APPLICATION NOTE H8/300L Super Low Power Series Block Transfer 2: Example Usage of the EEPMOV Instruction MOVE2 Introduction The software MOVE2 moves a block of data from one data memory area to another. Data can be moved even where the source data memory area overlaps the destination data memory area. This is an example of the application software

Contextual Info: VSC8221 Data Sheet 1 GENERAL DESCRIPTION Ideally suited for Ethernet Switches with SGMII/SerDes MAC Interfaces, Media Converter applications, and SFP/GBIC modules, the industry-leading, low-power VSC8221 from Vitesse integrates a high-performance 1.25Gbps SerDes and

AmSYS29

Abstract: RBS 3106 DEC PDP-11 F-11 MACRO8000 LT 5226 Z8000 RBS 6600 AM8085 RBS 2109 manual book Zilog cross reference
Contextual Info: Advanced Micro Devices AmZ8000 User’s Manual ^1 ^ i . R ra m 'e Y lectron Advanced Micro Devices AmZ8000 User’s Manual The International Standard of Quality guarantees these electrical AQLs on all parameters over the operating tempera­ ture range: 0.1% on MOS RAMs & ROMs;

Contextual Info: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS For airbag module, 105℃ LBG Series ・For airbag application ・High capacitance, low impedance, and good low temperature behavior ・Endurance with ripple current : 5,000 hours at 105℃ ・Solvent resistant type see PRECAUTIONS AND GUIDELINES

"write only memory"

Abstract: 8MB SDRAM MPC603UM/AD SDRAM Controller SDRAM DIMM 1997 sdram pcb layout MPC106 MPC950 MPC972 MPC980
Contextual Info: AN1722/D Motorola Order Number 12/97 REV 1 Application Note AR Y SDRAM System Design using the MPC106 by Gary Milliorn RISC Applications 1.1 Overview PR EL IM There are numerous possibilities available in designing systems, although most will probably fall into the typical category shown in Figure 1. This document refers to