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    4717E Search Results

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    4717E Price and Stock

    Vishay Semiconductors MMSZ4717-E3-08

    DIODE ZENER 43V 500MW SOD123
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    DigiKey MMSZ4717-E3-08 Digi-Reel 8,983 1
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    MMSZ4717-E3-08 Cut Tape 8,983 1
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    MMSZ4717-E3-08 Reel 6,000 3,000
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    Maxim Integrated Products MAX4717ETB-T

    IC SW SPDT-NO/NCX2 3OHM 10TDFN
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    DigiKey MAX4717ETB-T Digi-Reel 7,960 1
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    MAX4717ETB-T Cut Tape 7,960 1
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    MAX4717ETB-T Reel 7,500 2,500
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    Maxim Integrated Products MAX4717EBC-T

    IC SWITCH SPDT X 2 4.5OHM 12UCSP
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    DigiKey MAX4717EBC-T Digi-Reel 2,500 1
    • 1 $5.91
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    MAX4717EBC-T Cut Tape 2,500 1
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    MAX4717EBC-T Reel 2,500 2,500
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    onsemi NLAS4717EPFCT1G

    IC SW SPDTX2 3.5OHM 10MICROBUMP
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    DigiKey NLAS4717EPFCT1G Cut Tape 2,135 1
    • 1 $1.5
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    NLAS4717EPFCT1G Digi-Reel 2,135 1
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    Avnet Americas NLAS4717EPFCT1G Reel 0 Weeks, 2 Days 1,283
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    Rochester Electronics NLAS4717EPFCT1G 21,965 1
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    EBV Elektronik NLAS4717EPFCT1G 143 Weeks 3,000
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    Flip Electronics NLAS4717EPFCT1G 45,000
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    TE Connectivity 154717-E

    SMC F VERT B 12POS SMT 9.00MM
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    DigiKey 154717-E Cut Tape 640 1
    • 1 $3.03
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    154717-E Digi-Reel 640 1
    • 1 $3.03
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    154717-E Reel 560 280
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    Avnet Americas 154717-E Reel 560 14 Weeks, 1 Days 280
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    Mouser Electronics 154717-E 241
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    Newark 154717-E Cut Tape 257 1
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    154717-E Reel 280
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    Interstate Connecting Components 154717-E
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    Avnet Abacus 154717-E 1,960 9 Weeks 280
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    Avnet Asia 154717-E 9 Weeks, 1 Days 280
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    Master Electronics 154717-E 1,580
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    New Advantage Corporation 154717-E 840 1
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    Find more 4717E price and stock on Findchips.com

    4717E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G PDF

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/ z Voltage Operation: 1.8V to 5.5V double-throw SPDT CMOS analog switch designed to z On-Resistance: 4.5Ω (TYP) at 5.0V


    Original     		SGM4717EP 300MHz SGM4717EP 300MHz 300MHz) -57dB 10MHz -99dB PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10 PDF

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP PDF

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G PDF

    SGM4717EP

    Abstract: No abstract text available
    Text: 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch 4717EP GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/double -throw SPDT CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. It features high-bandwidth (300MHz) and low ON-resistance (4.5Ω


    Original     		300MHz SGM4717EP SGM4717EP 300MHz) PDF

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D PDF

    4717EP

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original     		NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D PDF