470 TRANSISTOR Search Results

transistor MAR 826

Abstract: A Wideband hybrid coupled amplifier 470 - 860 MHz Wideband hybrid coupled amplifier BLV57 Philips 2222 344 capacitors NCO8101 Philips 2222 capacitor philips 2222 030 capacitor philips 111J
Contextual Info: APPLICATION NOTE A Wideband hybrid coupled amplifier 470 − 860 MHz with 2 balanced transistors BLV57 NCO8101 Philips Semiconductors A Wideband hybrid coupled amplifier (470 − 860 MHz) with 2 balanced transistors BLV57 CONTENTS 1 ABSTRACT 2 INTRODUCTION

96-417-C323T

Abstract: IMD14 FMG12
Contextual Info: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576

2322-211

Abstract: Wideband hybrid coupled amplifier 470 860 MHz "capacitor philips" capacitor philips NCO8101 stripline hybrid BLV57 NCO8201 NCO8205 A Wideband hybrid coupled amplifier 470 - 860 MHz
Contextual Info: APPLICATION NOTE A wide-band class-AB hybrid coupled amplifier 470 − 860 MHz with two balanced transistors BLV57 NCO8205 Philips Semiconductors A wide-band class-AB hybrid coupled amplifier Application Note (470 − 860 MHz) with two balanced transistors BLV57

PM7520

Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
Contextual Info: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION

linear amplifier 470-860

Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
Contextual Info: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS

0021L

Contextual Info: e PTE 10049* 85 Watts, 470–860 MHz LDMOS Field Effect Transistor Description The 10049 is an internally matched, common source, n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications in the 470 to 860 MHz band. It is rated at 85 watts minimum

ericsson 10159

Abstract: PTF 10159 10159 atc 174 capacitor siemens 4700 35 G200 K1206 UT-85-25 470-860 mhz Power amplifier w UT85-25
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, LDMOS FET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 130 watts power output. Nitride surface passivation and

Contextual Info: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. C FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System

ULBM2

Abstract: ASI10675
Contextual Info: ULBM2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Base • PG = 10 dB at 2.0 W/470 MHz • Omnigold Metalization System

ASI10680

Contextual Info: ULBM5 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System

H2 SOT-89 RF amplifier

Abstract: GRM188R71H104KA01 sot-89 H3 uhf gp bjt START499D
Contextual Info: DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor Preliminary Data Features • Excellent thermal stability ■ Frequency: 430 - 470 MHz ■ Supply voltage: 3.6 V ■ Output power: 29 dBm ■ Power gain: 19 dB ■ Efficiency: 52 %

ULBM2TE

Abstract: ic 4570 ASI10679
Contextual Info: ULBM2TE NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2TE is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO-39GE FEATURES: B C ØA • Common Emitter • PG = 8.0 dB at 2.0 W/470 MHz • Omnigold Metalization System

ericsson 10159

Abstract: PTF10159 470-860 mhz Power amplifier w
Contextual Info: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power

MRF629

Contextual Info: MRF629 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF629 is Designed for UHF large signal, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO 205AD FEATURES: • Grounded Emitter • PG = 8.0 dB at 2.0 W/470 MHz • Omnigold Metalization System

ULBM5SL

Abstract: Unelco "Unelco Mica" ASI10681
Contextual Info: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. C FEATURES: • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System

ASI10681

Contextual Info: ULBM5SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM5SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Emitter • PG = 8.5 dB at 5.0 W/470 MHz • Omnigold Metalization System

ULBM2T

Abstract: ASI10676 transistor 335
Contextual Info: ULBM2T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2T is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE TO-39 FEATURES: • Common Emitter • PG = 6.0 dB at 2.0 W/470 MHz • Omnigold Metalization System B C

ASI10682

Abstract: ULBM10
Contextual Info: ULBM10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM10 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L STUD FEATURES: A • Common Emitter • PG = 7.0 dB at 10 W/470 MHz • Omnigold Metalization System

ULBM2SL

Abstract: ASI10678
Contextual Info: ULBM2SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM2SL is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .280 4L PILL FEATURES: • Common Emitter • PG = 10 dB at 2.0 W/470 MHz • Omnigold Metalization System

TMF8901B

Abstract: d1413
Contextual Info: TMF8901B Semiconductor Si RF LDMOS Transistor Unit in mm SOT-223 □ Applications 6.5 - VHF and UHF wide band amplifier 3.0 □ Features 4 3.5 GP = 12.4 dB at VDS = 4.5 V, IDset = 200 mA, f = 470 MHz GP = 14.7 dB at VDS = 6.0 V, IDset = 200 mA, f = 470 MHz

4700 IC

Abstract: ic 4700 20091
Contextual Info: e PTB 20091 30 Watts, 470–860 MHz UHF TV Linear Power Transistor Description The 20091 is an NPN, common emitter RF power transistor intended for 25 Vdc class A operation from 470 to 860 MHz. It is rated at 30 watts P-sync output power. Ion implantation, nitride surface passivation

ASI10683

Abstract: ULBM25 470 6L
Contextual Info: ULBM25 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ULBM25 is Designed for Class C, FM Land Mobile Applications up to 470 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.5 dB at 25 W/470 MHz • Omnigold Metalization System

3SK252

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK252 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS VDS = 3.5 V (Unit: mm) NF1 = 2.0 dB TYP. (f = 470 MHz) 2 GPS = 19.0 dB TYP. (f = 470 MHz)

JX - 638

Abstract: 20190 UT85-25 UT-85-25 0280 212 010 microstrip
Contextual Info: e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically