IRF*260
Abstract: irfp260
Text: International 1@ r]Rectifier 4Ö55452 HEXFET P o w e r M O S F E T INTERNATIONAL • • • • • • □ D lS M 'ît fi 7 7 • I N R PD-9.755 IRFP260 RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching
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IRFP260
5545E
IRF*260
irfp260
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transistor c246
Abstract: transistor c245 c245 transistor
Text: PD - 9.773 International üüRectffier IRGBF30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features JI* Lc J *.J • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
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IRGBF30F
10kHz)
O-220AB
C-247
46S5455
TQ-220AB
C-248
transistor c246
transistor c245
c245 transistor
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Untitled
Abstract: No abstract text available
Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter
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IRGCH50FE
IRGCH50FE
250pA,
250pA
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hf50c120
Abstract: No abstract text available
Text: International IO R Rectifier PD'2-496 H F 50C 120A C B TARGET HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form D e s c rip tio n P a ra m e te r G u a ra n te e d (M in /M a x ) T e s t C o n d itio n s
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HF50C120ACB
250pA
hf50c120
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Untitled
Abstract: No abstract text available
Text: PD-9.1443 International l R Rectifier IRGCH50SE TARGET IRGCH50SE IGBT Die in Wafer Form 1200 V Size 5 Standard Speed 5" Wafer Electrical Characteristics Wafer Form D escription G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
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OCR Scan
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IRGCH50SE
IRGCH50SE
250pA,
250pA
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Untitled
Abstract: No abstract text available
Text: PD-9.1429 International lö R Rectifier IRGCC30UE TARGET IRGCC30UE IGBT Die in Wafer Form 600 V Size 3 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) 3.3V Max. lc = 12A, T j = 25°C, V GE = 15V
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IRGCC30UE
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: I O R — INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER Diod^ Thyristor 2bE D • and Triac Junctions 4355452 0010280 1 ■ 0h 0$^ T^Q ^O S * POWER SEMICONDUCTOR JUNCTIONS THE APPLICATION AND CUSTOM ASSEMBLY OF POWER SEMICONDUCTOR JUNCTIONS INTRODUCTION
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier PD‘2500 H F30A 060A C B TARGET HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Param eter V fm BV r I RM Description Guaranteed (Min/Max) Forward Voltage Test Conditions 1.8V Max.
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HF30A060ACB
250pA
100mm,
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Untitled
Abstract: No abstract text available
Text: International I Q R Rectifier PD'2-498 H F 40A 060A C B TARGET HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n V fm BVr Forward V oltage I RM G u a ra n te e d (M in /M a x )
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HF40A060ACB
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 2bE D • 4fi554S2 O O I Q I C H 2 ■ Schottky Rectifiers International Schottky Die @¡*1Rectifier Part Number Die A mm in. Size B mm (In.) Anode Metal Tj Max °C SC090H035A SC090H045A 2.29 (0.090) 2.29 (0.090) 2.03 (0.080) 2.03 (0.080)
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4fi554S2
SC090H035A
SC090H045A
12CTQ
SC090S150A
10CTQ
SC090S035A
SC090S045A
15CTQ
SC125H035A
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PDF
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MT29VZZZAD8DQKSM-053 W ES.9D8
Abstract: No abstract text available
Text: International ICR Rectifier pm.-mìi IRGCH30SE TARGET IRGCH30SE IGBT Die in Wafer Form 1200 V Size 3 Standard Speed 5” Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) V c e (on) Collector-to-Emitter Saturation Voltage 3.3V Max.
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IRGCH30SE
IRGCH30SE
250pA,
250pA
MT29VZZZAD8DQKSM-053 W ES.9D8
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Untitled
Abstract: No abstract text available
Text: International IO R Rectifier PD'2'501 H F 10A 060A C B TARGET HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) Test Conditions Forward Voltage 1.8V Max. bvr
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HF10A060ACB
250pA
100mm,
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PDF
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier PD-9.1442 IRGCH40SE TARGET IRGCH40SE IGBT Die in Wafer Form 1200 V Size 4 Standard Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VcE(on) C ollector-to-Em itter Saturation V oltage
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IRGCH40SE
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1419 International IQ R Rectifier IRGCH70KE TARGET IRGCH70KE IGBT Die in Wafer Form 1200 V Size 7 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE(on) Param eter Collector-to-Emitter Saturation Voltage
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IRGCH70KE
IRGCH70KE
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.
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IRGCH50KE
IRGCH50KE
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 4ÖSS4S5 GQ1G151 3 • SbE D International Rectifier Rectifiers Fast Recovery T - ô 3-¿2.3 _ Snubber and Free Wheeling Diodes >F AV <@ Tc Part Number Vr r m R18CF25AA R18SF25AA R23DF25AA R23AF25AA R34BF45 R52KF45 2500 2500 2500 2500
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GQ1G151
R18CF25AA
R18SF25AA
R23DF25AA
R23AF25AA
R34BF45
R52KF45
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Untitled
Abstract: No abstract text available
Text: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.
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OCR Scan
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P-944
IRGCC50KE
IRGCC50KE
250pA,
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PDF
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Untitled
Abstract: No abstract text available
Text: International pd-2 .6 08 lO R Rectifier_ target H F30C 060A C E HF30C060ACE Hexfred Die in W afer Form 600 V Size 30 5" Wafer Electrical Characteristics W afer Form Param eter Description Guaranteed (Min/Max) 1.7 V Max. Test Conditions V fm F orw ard V oltag e
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HF30C060ACE
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PDF
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Untitled
Abstract: No abstract text available
Text: International is s r Rectifier pd-9.«3i IRGCC20UE TARGET IRGCC20UE IGBT Die in Wafer Form 600 V Size 2 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (M in/M ax) V ce (on) Parameter Collector-to-Emitter Saturation Voltage
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IRGCC20UE
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: International TOR Rectifier PM-'4!1 IRGCH50ME TARGET IRGCH50ME IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M ax) V c e (on) Collector-to-Em itter Saturation Voltage
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IRGCH50ME
250pA,
250pA
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-9.1430 International lö R Rectifier IRGCC30FE TARGET IRGCC30FE IGBT Die in Wafer Form 600 V Size 3 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D e s c rip tio n G u a ra n te e d (M in /M a x ) V c E (o n ) P a ra m e te r Collector-to-Em itter Saturation Voltage
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IRGCC30FE
IRGCC30FE
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PDF
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4055452 0[]lfl:L73 ETT M I N R Data Sheet No. PD-6.014 INTERNATIONAL. RECTIFIER IO R IR 2110C HIGH VOLTAGE MOS GATE DRIVER General Description The IR2110C is the die form of the IR2110 refer to D ata S h e et No. PD-6.011B ; a high voltage, high speed
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2110C
IR2110C
IR2110
IR2110C
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PDF
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Untitled
Abstract: No abstract text available
Text: International pc-9.1428 IRGCC40FE IQRRectifi Gf_ TARGET IRGCC40FE IGBT Die in Wafer Form 600 V Size 4 Fast Speed 5" Wafer Electrical Characteristics Wafer Form P a ra m e te r D e s c rip tio n G u a ra n te e d (M in /M a x ) VCE (on) Cotlector-to-Em itter Saturation Voltage
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OCR Scan
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IRGCC40FE
IRGCC40FE
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PDF
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Untitled
Abstract: No abstract text available
Text: International IOR Rectifier PD-9.1427 IRGCC40KE TARGET IRGCC40KE IGBT Die in Wafer Form 600 V Size 4 Ultra-Fast Speed 5 " Wafer Electrical Characteristics Wafer Form Param eter Description G uaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage
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OCR Scan
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P-947
IRGCC40KE
IRGCC40KE
250pA,
250pA
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PDF
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