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    4600 FET TRANSISTOR Search Results

    4600 FET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4600 FET TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2

    CGHV96050F2

    Abstract: CGHV96
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    CGHV96100F2

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96050F2

    Abstract: No abstract text available
    Text: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2

    40VPulse

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2

    CGHV96100F1

    Abstract: taconic
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    CGHV96050F1

    Abstract: No abstract text available
    Text: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison


    Original     		PDF CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1

    Untitled

    Abstract: No abstract text available
    Text: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14250 CGHV14250 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    Untitled

    Abstract: No abstract text available
    Text: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar


    Original     		PDF CGHV14500 CGHV14500 CGHV14

    2SJ605

    Abstract: 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z a2231 1720M
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE


    Original     		PDF 2SJ605 2SJ605 O-220AB 2SJ605-S O-262 2SJ605-ZJ O-263 2SJ605-Z O-220SMDNote 2SJ605-S 2SJ605-Z 2SJ605-ZJ MP-25 MP-25Z a2231 1720M

    LTM4600

    Abstract: ALUMINUM ELECTROLYTIC CAPACITOR SURFACE MOUNT G4 100UF 6V transistor t18 FET
    Text: LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModules for 20A Output Current


    Original     		PDF LTM4600 100pF C3216X5R1E106MT JMK316BJ226ML-T501 4TPE470MCL 4600f ALUMINUM ELECTROLYTIC CAPACITOR SURFACE MOUNT G4 100UF 6V transistor t18 FET

    T20 96 diode

    Abstract: 470uf 16V tantalum LTM4600 6TPE330MIL K19 FET LTM4600IV LTM4600EV PN01 4600 fet transistor 4600 mosfet
    Text: LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A


    Original     		PDF LTM4600 L-T501 4TPE470MCL LTC2900 LTC2923 LT3825/LT3837 4600fa T20 96 diode 470uf 16V tantalum LTM4600 6TPE330MIL K19 FET LTM4600IV LTM4600EV PN01 4600 fet transistor 4600 mosfet

    4600 fet transistor

    Abstract: LTM4600 LTM4600S n20 n21 fet sanyo CAP 330uF 35V 320 5400 capacitor 4600 fet LTM4600EV LTM4600IV PN01
    Text: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current


    Original     		PDF LTM4600 100pF C3216X5R1E106MT JMK316BJ226ML-T501 4TPE470MCL 4600p 4600 fet transistor LTM4600 LTM4600S n20 n21 fet sanyo CAP 330uF 35V 320 5400 capacitor 4600 fet LTM4600EV LTM4600IV PN01

    LTM4600

    Abstract: PN01 transistor marking A21 4600P LTM4600EV LTM4600IV 4600 fet transistor 15V REGULATOR 78 L15 transistor J6 LTM4600S
    Text: Electrical Specifications Subject to Change LTM4600 10A High Efficiency DC/DC µModule U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current


    Original     		PDF LTM4600 100pF C3216X5R1E106MT JMK316BJ226ML-T501 4TPE470MCL 4600p LTM4600 PN01 transistor marking A21 4600P LTM4600EV LTM4600IV 4600 fet transistor 15V REGULATOR 78 L15 transistor J6 LTM4600S

    LTM4600

    Abstract: No abstract text available
    Text: LTM4600 10A High Efficiency DC/DC µModule FEATURES n n n n n n n n n n n n n n DESCRIPTION Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two µModule DC/DC Converters for 20A Output Current


    Original     		PDF LTM4600 LTM4601-1 LTM4602 LTM4603 LTM4603-1 LTM4601 4600fc LTM4600

    LTM4600

    Abstract: 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600
    Text: LTM4600 10A High Efficiency DC/DC µModule FEATURES n n n n n n n n n n n n n n DESCRIPTION Complete Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 20V 10A DC, 14A Peak Output Current Parallel Two Module DC/DC Converters for 20A Output Current


    Original     		PDF LTM4600 Included601 LTM4601-1 LTM4602 LTM4603 LTM4603-1 LTM4601 4600fc LTM4600 4600 fet transistor 4600 fet 6TPE330MIL LTM4600EV LTM4600IV PN01 4600 mosfet MOSFET 4600