Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
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PDF
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50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
P2H4M44xH
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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PDF
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50V/500V
PD4M441H
PD4M440H
300KHz
PD4M441H
PD4M44xH
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induction heating Circuit
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
PD4M441L
PD4M440L
PD4M441L
PD4M44xL
induction heating Circuit
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MTM15N45
Abstract: TO-204AA
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: MTM15N45 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:
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PDF
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O-204AA
MTM15N45
MTM15N45
TO-204AA
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450v 15a mosfet
Abstract: induction heating Circuit
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
P2H4M44xL
450v 15a mosfet
induction heating Circuit
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES
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IXYH24N90C3D1
IF110
O-247
24N90C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH24N90C3D1 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V
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PDF
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IXYH24N90C3D1
O-247
IF110
24N90C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM w/Diode VCES IC90 VCE sat tfi(typ) IXYH24N90C3D1 High-Speed IGBT for 20-50 kHz Switching Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 900 900 V V VGES
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PDF
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IXYH24N90C3D1
O-247
IF110
24N90C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
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40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXYH40N90C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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PDF
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IC110
IXYH40N90C3D1
110ns
O-247
IF110
40N90C3D1
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IXYH40N90C3D1
Abstract: No abstract text available
Text: Advance Technical Information IXYH40N90C3D1 900V XPTTM IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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Original
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PDF
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IXYH40N90C3D1
IC110
110ns
O-247
IF110
062in.
IXYH40N90C3D1
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EN3457
Abstract: 2SK1454
Text: Ordering number:EN3457 N-Channel Silicon MOSFET 2SK1454 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1454] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4
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EN3457
2SK1454
2SK1454]
EN3457
2SK1454
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2SK1454
Abstract: No abstract text available
Text: Ordering number:EN3457 N-Channel Silicon MOSFET 2SK1454 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-state resistance. · Ultrahigh-speed switching. · Converters. unit:mm 2077A [2SK1454] 3.3 5.0 1.0 26.0 6.0 20.0 2.0 2.0 3.4
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EN3457
2SK1454
2SK1454]
PW10s,
2SK1454
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
150MAX
-441L
-440L
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|
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450v 15a mosfet
Abstract: 440L PD4M440L PD4M441L Mosfet 30A 250V
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Cascaded Circuit Dimension mm 108.0 * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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PD4M441L
PD4M440L
50V/500V
PD4M441L
Tem100
150MAX
450v 15a mosfet
440L
PD4M440L
Mosfet 30A 250V
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induction heating Circuit
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
PD4M441L
PD4M440L
PD4M441L
150iMAX
56i/W
-441L
-440L
induction heating Circuit
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220g
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
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Original
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PDF
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50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
150iMAX
56i/W
-441H
-440H
220g
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441H
Abstract: PD4M440H PD4M441H
Text: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by 108.0 SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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PDF
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PD4M441H
PD4M440H
50V/500V
300KHz
PD4M441H
441H
PD4M440H
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Mosfet 30A 250V
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441H / PD4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible
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Original
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PDF
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50V/500V
PD4M441H
PD4M440H
300KHz
PD4M441H
150iMAX
56i/W
-441H
-440H
Mosfet 30A 250V
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE PD4M441L / PD4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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PD4M441L
PD4M440L
50V/500V
PD4M441L
-441L
-440L
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Mosfet 30A 250V
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
150iMAX
56i/W
-441L
-440L
Mosfet 30A 250V
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induction heating Circuit
Abstract: mosfet vgs 5v
Text: MOSFET MODULE P2H4M441L / P2H4M440L Dual 30A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching 108.0 Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating
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Original
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PDF
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50V/500V
P2H4M441L
P2H4M440L
P2H4M441L
induction heating Circuit
mosfet vgs 5v
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Untitled
Abstract: No abstract text available
Text: MOSFET MODULE P2H4M441H / P2H4M440H Dual 30A 450V/500V OUTLINE DRAWING FEATURES * Dual MOS FETs Separated Circuit Dimension mm 108.0 * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Circuit Connected in Parallel * 300KHz High Speed Switching Possible
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Original
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PDF
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50V/500V
P2H4M441H
P2H4M440H
300KHz
P2H4M441H
-441H
-440H
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n -channel power mosfet
Abstract: YS160 34571
Text: 2SK1454 A P A dvanced Perform ance Series 2077 V dss = 4 5 0 V N Channel Power MOSFET 3457 F eatu res • Low ON-state resistance. - Very high-speed switching • Converters. A bsolute M axim um R atings at T a= 25°C Drain to Source Voltage Vdss Gate to Source Voltage
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OCR Scan
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PDF
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2SK1454
--i30V
n -channel power mosfet
YS160
34571
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