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Anatech Electronics Inc AE2450NS2197 RF FILTER 2.45GHZ MODULE
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DigiKey	AE2450NS2197	Box			1	1 $1575 10 $1250 100 $1250 1000 $1250 10000 $1250	Buy Now
Renata Batteries CR2450NSM Coin Cell Battery 2 PIN HORZ SURF MNT 540mAh 24.5x5.3mm
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Mouser Electronics	CR2450NSM		248			1 $2.59 10 $2.5 100 $2.36 1000 $2.1 10000 $1.55	Buy Now
SMC Corporation of America NCA1R200-0450N-SF CYLINDER, TIE ROD, NCA1 SERIES \| SMC Corporation NCA1R200-0450N-SF
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RS	NCA1R200-0450N-SF	Bulk		5 Weeks	1	1 $119.35 10 $119.35 100 $119.35 1000 $119.35 10000 $119.35	Get Quote
SMC Corporation of America NCA1F325-0450N-SF CYLINDER, TIE ROD, NCA1 SERIES \| SMC Corporation NCA1F325-0450N-SF
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RS	NCA1F325-0450N-SF	Bulk		5 Weeks	1	1 $243.6 10 $243.6 100 $243.6 1000 $243.6 10000 $243.6	Get Quote
SMC Corporation of America NCA1B325-0450N-SF CYLINDER, TIE ROD, NCA1 SERIES \| SMC Corporation NCA1B325-0450N-SF
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RS	NCA1B325-0450N-SF	Bulk		5 Weeks	1	1 $206.1 10 $206.1 100 $206.1 1000 $206.1 10000 $206.1	Get Quote

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450NS Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TSOP40 Flash Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS	Original	PDF	M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
FDIP24W Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040 Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS	Original	PDF	M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
B2716 Abstract: m2716 FDIP24W M271616 Text: M2716 16 Kbit 2Kb x 8 NMOS UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE	Original	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns AI00784B B2716 FDIP24W M271616
NTE2708 Abstract: 1702 eprom 1702 eprom programmer 74LS Text: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–	Original	PDF	NTE2708 450ns NTE2708 1702 eprom 1702 eprom programmer 74LS
1N914 Abstract: FDIP24W M2716 Text: M2716 NMOS 16K 2K x 8 UV EPROM 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM	Original	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W 1N914 FDIP24W
B2716 Abstract: FDIP24W M2716 m2716 dip M2716* eprom Text: M2716 NMOS 16K 2K x 8 UV EPROM DATA BRIEFING 2048 x 8 ORGANIZATION 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns SINGLE 5V SUPPLY VOLTAGE STATIC-NO CLOCKS REQUIRED INPUTS and OUTPUTS TTL COMPATIBLE DURING BOTH READ and PROGRAM	Original	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns B2716 FDIP24W m2716 dip M2716* eprom
AM2716 Abstract: circuit diagram of m2716 m2716 1N914 FDIP24W Text: M2716 NMOS 16 Kbit 2Kb x 8 UV EPROM NOT FOR NEW DESIGN • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: – M2716-1 is 350ns – M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS and OUTPUTS TTL COMPATIBLE	Original	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W AM2716 circuit diagram of m2716 1N914 FDIP24W
M111M Abstract: 55115 256X8 515S5 Intel 2708 2308 rom intel 8308 Text: 2607-F,l,N FEATURES • • • • • • • • • • • • • PIN DESIGNATION Static operation—no clocks Access time: 450ns max Single 5V power supply T TL compatible inputs and outputs Power dissipation: 525mW Tri-state outputs Mask programmable chip select for easy	OCR Scan	PDF	450ns 525mW 24-pin 1024X4 M111M 55115 256X8 515S5 Intel 2708 2308 rom intel 8308
nec 2716 eprom Abstract: 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764 Text: NEC NMUS juPD2364 NEC Electronic U.S.A. Inc. Electronic A rrays Division READ ONLY MEMORY 8192 WORDS, 8 BITS/WORD FEATURES: GENERAL DESCRIPTION: • Three Fast Access Times -450nsec -350nsec -300nsec • All Inputs and Outputs TTL Compatible • Single +5V ± 10% Power Supply	OCR Scan	PDF	uPD2364 iPD2364 -450ns35PC 2364-30PC 450nsec 350nsec 300nsec nec 2716 eprom 2364 eprom NEC 2732 pin diagram of ic 2764 pin diagram of ic 2732 2732 rom 2732 eprom Electronic Arrays 2732 memory chip ROM 2764
XL2804A-250 Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06 Text: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation	OCR Scan	PDF	250ns, 300ns, 350ns, 450ns 100pF) 100pF XL2804A XL2804A-250 XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
CDP1823 Abstract: No abstract text available Text: h a r r is Œ CDP1823 d^P1 S E M I C O N D U C T O R 128-Word X 8-Bit LSI Static RAM M arch 1 9 9 2 Features Description • Fast Access Time - Vqq = 5 V .450ns - VDO= 1 0 V .250ns	OCR Scan	PDF	CDP1823 128-Word 450ns 250ns CDP1823, CDP1823C
m2716a Abstract: No abstract text available Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED	OCR Scan	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W m2716a
R09128 Abstract: R09128B Text: »I N i K A l IN S I K U M l N I R09128B/C/D PRELIMINARY INFORMATION 131,072 Bit Static Read Only Memory READ ONLY M EM O R Y I FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 16,384 x 8 Organization Single + 5 Volt S upply 450ns Max Access Tim e: R09128B 300ns Max Access Time: R09128C	OCR Scan	PDF	R09128B/C/D 450ns R09128B 300ns R09128C 200ns R09128D R09128 R09128B
2364 Abstract: A12CE SMM2364C pf051 SMM2364 Text: PF051-05 SMM2364C CMOS 64K-BIT MASK ROM •L o w Supply Current •A ccess Time 350ns/450ns #8,192 Words X 8 Bits Asynchronous • DESCRIPTION The SMM2364C is an 8,192 words X 8 bits asynchronous, static, mask programmable ROM on a monolithic CMOS chip and is characterized by fast access time and very low power dissipation. The nature "static”	OCR Scan	PDF	PF051-05 SMM2364C 64K-BIT 350ns/450ns 2364C 24-pin 2364 A12CE pf051 SMM2364

M2764F1 Abstract: sgs M2764 sgs M2764f1 EPROM 2764-25 m2764-4f1 EPROM M2764 2764-25 m2764 M2764-2F1 m2764 f1 Text: M2764 a s 64K 8 K x 8 UV ERASABLE PROM • FAST ACCESS TIME: 200ns 250ns 300ns 450ns M AX MAX MAX MAX M2764-2F1 M 2764F1/-25F1/F6 M 2764-3F1/-30F1 M 2764-4F1/-45F1/-4F6 • SINGLE + 5 V POWER SUPPLY • LOW STAND BY CUR RENT 40mA MAX • INPUTS AND O UTPU TS TTL COM PATIBLE	OCR Scan	PDF	M2764 200ns M2764-2F1 250ns M2764F1/-25F1/F6 300ns M2764-3F1/-30F1 450ns M2764-4F1/-45F1/-4F6 M2764HF1 M2764F1 sgs M2764 sgs M2764f1 EPROM 2764-25 m2764-4f1 EPROM M2764 2764-25 m2764 m2764 f1
HM472114P-3 Abstract: 2114L HM-472114-3 HM472114-3 HM472114P3 HM472114-4 HM472114P-4 Text: H M 472114 -3 ,H M 4 7 2 1 14-4, H M 472114P-3,H M 472114P -4 1 0 2 4 -word X 4-bit Static Random Access Memory • Fast Access T im e . H M 4 7 2 1 14-3 300ns {max. HM 472114-3, HM 472114-4 H M 4 7 2 1 14-4 450ns m ax.)	OCR Scan	PDF	HM472114-3 HM472114-4, HM472114P-3 HM472114P 1024-word 300ns HM472114-4 450ns 200mW 2114L HM-472114-3 HM472114P3 HM472114P-4
Untitled Abstract: No abstract text available Text: XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns , ■ 5 Volt-only Operation ■ Industrial Temperature Range Available XLE2865A ■ Fast Nonvolatile Write Cycle	OCR Scan	PDF	XL2865A 250ns, 300ns, 350ns, 450ns XLE2865A) 200ns XL2865A
2864A Abstract: No abstract text available Text: eXe L MICROELECTRONICS noC A A XLZO O H A M k n l.f' 8K X 8 Electrically Erasable PROM FE A TU R ES • Fast Read A ccess Tim es — 250ns, 300ns, 350ns, 450ns ■ 5 V o lt-o nly O peratio n Including W rite ■ ■ ■ Industrial T em p e ra tu re R ange A vailab le	OCR Scan	PDF	250ns, 300ns, 350ns, 450ns 200ns XL2864A XL2864A 2864A
SM2716 Abstract: No abstract text available Text: Æ T S C S -T H O M S O N M2716 M W & i( O T K !]D ( g S NMOS 16K (2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED	OCR Scan	PDF	M2716 525mW 132mW M2716-1 350ns M2716 450ns SM2716
Untitled Abstract: No abstract text available Text: rZ J SGS'THOMSON ^7 # E ülD »[llLll @ (M a(@ i M 2716 NMOS 16K (2Kx 8 UV EPROM • 2048x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED	OCR Scan	PDF	2048x 525mW 132mW M2716-1 350ns M2716 450ns
MOSTEK MEMORY MK36000 Abstract: MK36000-4 MK36000 MOSTEK 36000 MK36000-5 8k mostek mk36 10PA2 mostek rom mk36000 Text: MOSTEK 64K-BIT READ-ONLY MEMORY M K36000 P/J/N -4/5 O M K 3 6 0 0 0 8 K x 8 O rganization— "E d g e A c tiva te d " * operation (C E) P/N M K 3 6 0 0 0 -4 M K 3 6 0 0 0 -5 Access 250n s 300ns Cycle 375ns 450ns □ Single + 5 V ± 1 0 % Power Su p p ly □	OCR Scan	PDF	64K-BIT MK36000 MK36000-4 250ns 375ns MK36000-5 300ns 450ns MOSTEK MEMORY MK36000 MOSTEK 36000 8k mostek mk36 10PA2 mostek rom mk36000
2142-2 Abstract: No abstract text available Text: in te ! 2142 1024 X 4 BIT STATIC RAM 2142-2 2142-3 2142 2142L3 2142L Max. Access Time ns 200 300 450 300 450 Max. Power Dissipation (mw) 525 525 525 370 370 High Density 20 Pin Package No Clock or Timing Strobe Required Access Time Selections From 200-450ns	OCR Scan	PDF	2142L3 2142L 200-450ns 4096-bit VT/771/1 2142-2
XCS50 Abstract: No abstract text available Text: HARRIS SEMICOND SECTOR HARRIS SEMICONDUCTOR • M 3 Q 2 2 7 1 003101=1 1 H H A S - r - 4 g ,- 2 3 - 12. C D P C D P 1 1 8 8 2 2 3 3 C 128-Word x 8-Bit LSI Static RAM March 1992 Features Description • Fast Access Time . Vdd = 5 V . 450ns	OCR Scan	PDF	128-Word P1823 P1823C DP1823 bidirectiona600 CDP1823, CDP1823C XCS50
Untitled Abstract: No abstract text available Text: MICROELECTRONICS XL2865A 8K X 8 Electrically Erasable PROM PIN CONFIGURATION FEATURES 28 Pin PDIP Type "P" Package • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 28 Pin CERDIP Type "C" Package ■v ^ r , ■ 5 Volt-only Operation — Including Write	OCR Scan	PDF	XL2865A 250ns, 300ns, 350ns, 450ns

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450NS Search Results

450NS Price and Stock

Anatech Electronics Inc AE2450NS2197

Renata Batteries CR2450NSM

SMC Corporation of America NCA1R200-0450N-SF

SMC Corporation of America NCA1F325-0450N-SF

SMC Corporation of America NCA1B325-0450N-SF

450NS Datasheets Context Search

TSOP40 Flash

FDIP24W

B2716

NTE2708

1N914

B2716

AM2716

M111M

nec 2716 eprom

XL2804A-250

CDP1823

m2716a

R09128

2364

M2764F1

HM472114P-3

Untitled

2864A

SM2716

Untitled

MOSTEK MEMORY MK36000

2142-2

XCS50

Untitled