DD11D01
Abstract: GN6010A
Text: HITACHI / OPTOELECTRONICS SIE D Wt 44Tb2D5 DOllGD'ì 37T « H I T 4 T -3 9 -// GN6010A Silicon N Channel IGBT HITACHI Application Mar. 1992 TO -220A B High speed power switching Features • High speed switching tf = 150 ns typ, 350 ns max • Low on saturation voltage
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DD11D01
GN6010A
O-220AB
HITMT-31-ll
O-22QAB
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2SK384
Abstract: 2SK384L 2SK384S Hitachi Scans-001 2SK38
Text: 44Tb2D5 0013DM3 311 B H i m blE D 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS SILICON N -C H A N N E L M O S FET r n 11 Type <D Type H IG H SPEED POW ER S W IT C H IN G . H IG H FR E Q U E N C Y POWER A M PLIFIER Q • FEATURES • S m a ll Package. • High Sp ee d S w itch in g .
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44Tb2D5
0013DM3
2SK384L
2SK384S
2SK384
2SK384S
Hitachi Scans-001
2SK38
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DIODE T25 4 Jo
Abstract: DIODE T25 4 do 2SK384L-2SK384S 2SK384 DIODE T25 4
Text: blE D 44Tb2D5 0013DM3 311 IHim 2SK384L,2SK384S HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N E L M O S FET r n 11 ÏM H IG H S P E E D P O W E R S W IT C H IN G . H IG H F R E Q U E N C Y P O W E R A M P L IF IE R H Type <DType • FEATUR ES • Sm all Package.
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44TbED5
0013DM3
2SK384L-2SK384S
DIODE T25 4 Jo
DIODE T25 4 do
2SK384
DIODE T25 4
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2SK1665
Abstract: RD20A VM-50V diode sr45 Silicon N Channel MOS FET High Speed Power Switching 2sk16
Text: 44Tb2D5 0D134ÛE 7^5 « H i m 2SK1665- tlE T> HITACHI/ O P T O E L E C T R O N I C S SILICON N -CHANNEL MOS FET 5 .0 m u . T ii HIGH SPEED POWER SWITCHING • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • 4 V Gate Drive Device
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44Tb2D5
0D134Ã
44clbS0S
2SK1665
2SK1665
RD20A
VM-50V
diode sr45
Silicon N Channel MOS FET High Speed Power Switching
2sk16
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LM060L
Abstract: LM060 hitachi 16 X 2 lcd
Text: HITACHI / OPTOELECTRONICS HITACHI LIE D • ■ MM'ibSOS DD1244b flt.7 ■ HITM . . LM060L ■ 24 character x 2 lines ■ Controller LSI HD44780 is built-in (See page 115). ■ +5V single power supply INTERNAL PIN CONNECTION MECHANICAL DATA (Nominal dimensions)
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DD1244b
LM060L
HD44780
Rf-200kQ
44Tb2D5
LM060L
LM060
hitachi 16 X 2 lcd
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2SJ110
Abstract: 2sj118 t1511
Text: bl E D • MMTbSGS 0D1ST17 570 ■ H I T M 2 S J118 , 2 S J110 H I T A C H I / OPTOELECTRONICS *3.!±02 SILICON P-CHANNEL MOS FET - HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SK413, 2SK414 ■ FEATURES • Low On-Resistance.
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0D1ST17
2SK413,
2SK414
44Tb5DS
2SJ118
2SJ119
2SJ110
t1511
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HE8815VG
Abstract: HE8807SG HL8311E HL8311G HL8312E Hitachi Scans-001 P015M
Text: HITACHI/COPTOELECTRONICS 54E D • MM^bSOS 001E0b3 EIE H H I T M H L8 3 1 1 E /G G a A IA s L D Description The HL8311E/G are 0.8 Jim band GaAlAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment.
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HL8311E/G
HL8311E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HE8807SG
HL8311E
HL8311G
HL8312E
Hitachi Scans-001
P015M
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TRM5467
Abstract: No abstract text available
Text: TRM5467 Preliminary OC-3 Transmitter Description The TRM5467 is a lightwave transmitter for OC-3. Features • Fabry-Perot laser diode • High optical output power: +ldB m min. • Operation at 155.52 Mb/s (Scrambled NRZ) at 1.3 (im wavelength • Uncooled laser with automatic optical power con
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TRM5467
TRM5467
10/125pm
QQ1447b
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2SK399
Abstract: 2SJ113 44TB2 diode lo2a GG13 J-10 Hitachi Scans-001
Text: MMTbEGS GOlBGHfc, Q5G • H I T M 2SK399 HITACHI/ OPTOELECTRONICS b lE ]) SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ113 I N ■ FEATURES • Low On-Resistance. • High Speed Switching.
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2SJ113
2SK399
2SJ113
44TB2
diode lo2a
GG13
J-10
Hitachi Scans-001
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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HL7838G
D0120L42
HL7838G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
hitachi he1301
HL8312E
laser GaAIAs de 5 mw 760 800
HE8807SG
HE8813VG
HL7838
Hitachi Scans-001
HE8403
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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D01S14S
HL1541A/AC/FG/BF/DL/DM
D012140
HL1541
HL1541A/AC
HL1541FG
HL1541BF
HL1541DL
HE8815VG
HE8813VG
Thermistor bth 471
d 1548
10G 1550 optical laser in butterfly
HL1541A
HL1541DM
10 gb laser diode
AP-93
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
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HL8318E/G
441bEG5
HL8318E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
T9040
HE8807SG
HE8813VG
HL8312E
HL8318E
HL8318G
Hitachi Scans-001
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