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Littelfuse Inc IXFR44N80P MOSFET N-CH 800V 25A ISOPLUS247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFR44N80P	Tube	232		1	1 $23.59 10 $23.59 100 $15.03733 1000 $13.94 10000 $13.94	Buy Now
Newark	IXFR44N80P	Bulk			300	1 - 10 - 100 - 1000 $14.61 10000 $14.61	Buy Now
RS	IXFR44N80P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $20.48 10000 $19.84	Get Quote
Littelfuse Inc IXFN44N80P MOSFET N-CH 800V 39A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN44N80P	Tube	230		1	1 $33.3 10 $24.579 100 $21.5334 1000 $21.5334 10000 $21.5334	Buy Now
RS	IXFN44N80P	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $31.64 10000 $30.65	Get Quote
Littelfuse Inc IXFN44N80Q3 MOSFET N-CH 800V 37A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN44N80Q3	Tube	10		1	1 $61.31 10 $46.917 100 $45.7839 1000 $45.7839 10000 $45.7839	Buy Now
Newark	IXFN44N80Q3	Bulk			300	1 - 10 - 100 $47.99 1000 $47.99 10000 $47.99	Buy Now
RS	IXFN44N80Q3	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $67.27 10000 $65.15	Get Quote
IXYS Corporation IXFN44N80 MOSFET N-CH 800V 44A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN44N80	Tube			10	1 - 10 $38.15 100 $38.15 1000 $38.15 10000 $38.15	Buy Now
Mouser Electronics	IXFN44N80					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	IXFN44N80		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFL44N80 MOSFET N-CH 800V 44A ISOPLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFL44N80	Tube			25	1 - 10 - 100 $25.7752 1000 $25.7752 10000 $25.7752	Buy Now
Mouser Electronics	IXFL44N80					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	IXFL44N80		40			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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44N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFX 44N80P Abstract: 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P IXFX 44N80P 44N80P ixfk44n80p IXFX44N80P 44N80 PLUS247 44n8	PDF
44N80 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 728B1 123B1 728B1 065B1 44N80	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous	Original	44N80P	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P	PDF
44N80 Abstract: 125OC Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 Ω D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80 OT-227 E153432 728B1 44N80 125OC	PDF
Contextual Info: Advanced Technical Information IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80 OT-227	PDF
44N80 Abstract: 44N80P "SOT-227 B" dimensions Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V V VGS VGSM Continuous	Original	44N80P 44N80 44N80P "SOT-227 B" dimensions	PDF
IXFX 44N80P Abstract: 44n8 max2743 IXFK44N80P Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 800 800	Original	44N80P 44N80P O-264 PLUS247 IXFX 44N80P 44n8 max2743 IXFK44N80P	PDF
44N80P Abstract: ISOPLUS247 Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	44N80P 44N80P ISOPLUS247	PDF
Contextual Info: IXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single MOSFET Die IXFN 44N80 DSS I D25 RDS on 800 V 44 A 0.145 a N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions vt d s s T j =25°C to150°C 800 V Voon T u = 25° C to 150° C i R ^ I M il	OCR Scan	IXFN44N80 to150 OT-227 E153432	PDF
44N80 Abstract: 98594 Contextual Info: IXFN 44N80 HiPerFETTM Power MOSFETs Single MOSFET Die VDSS ID25 RDS on = 800 V = 44 A = 0.165 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW	Original	44N80 44N80 98594	PDF
Contextual Info: □ IXYS Advanced Technical Information IXFN 44N80 HiPerFET Power MOSFETs Single MOSFET Die V.DSS I D25 R,DS on 800 V 44 A 0.145 Q 9D N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions V DSS Td = 25°C to 150°C	OCR Scan	44N80	PDF
Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 44N80P IXFX 44N80P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 800 800 V	Original	44N80P	PDF
Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 150unless 728B1 123B1 728B1 065B1	PDF

Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFR 44N80P VDSS ID25 RDS on Electrically Isolated Tab trr = 800 V = 25 A Ω ≤ 200 mΩ ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	44N80P	PDF
44n8 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single MOSFET Die IXFN 44N80 VDSS ID25 RDS on = 800 V = 44 A = 0.145 W D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	44N80 OT-227 E153432 44n8	PDF
Contextual Info: 44N80 Power MOSFET HiPerFETTM Single MOSFET Die VDSS ID25 RDS on = 800V = 44A ≤ 0.165Ω Ω N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFN44N80 OT-227 E153432 44N80 100kHz 125OC	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
52N30 Abstract: 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50 Contextual Info: HiPerFET Power MOSFETs LowGa>°-c,ar rypes- - s » F series - Avalanche ruggedness with Fast Intrinsic Diode p > Type *D(25 c r38 typ. V max. typ. max. max. fi PF PF ns nC K/W W E T jm = 150"C ► New V Tc = 25°C 76 0.011 4400 1200 100 240 0.42 360 70	OCR Scan	76N06-11 76N07-11 76N07-12 67N10 75N10 50N20 58N20 74N20 80N20 35N30 52N30 20n80 ixfh 60N60 IXFX 44N80 15n10 7n80 E51G 44N80 60n60 46N50	PDF
C1218 Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10 Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268	OCR Scan	67N10 75N10 75N10Q 80N10Q O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 C1218 C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10	PDF

44N80 Search Results

44N80 Price and Stock

Littelfuse Inc IXFR44N80P

Littelfuse Inc IXFN44N80P

Littelfuse Inc IXFN44N80Q3

IXYS Corporation IXFN44N80

IXYS Corporation IXFL44N80

44N80 Datasheets Context Search

IXFX 44N80P

44N80

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C1146

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C1218