441MM Search Results

Contextual Info: THE EDGE LED Round Area Light – Type V Short ARE-EDR-5S-R3 BetaLED Catalog #: ARE - EDR - 5S - R3 - -D- - - - Rev. Date: 9/15/11 ø 23" [ 584mm ] 4.0" [ 102mm ] 21.4" [ 543mm ] 13.5" [ 344mm ] 17.4" [ 441mm ] 3.9" [ 98mm ] Notes: Product Family ARE Optic

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES  High Frequency = 100, 125MHz  Package:  The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing

Contextual Info: WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a quad-bank DRAM with

3121

Abstract: 441M 9601 WEDPN4M64V-XBX 54TSOP
Contextual Info: 4M x 64 SDRAM Multi-Chip Package Optimum Density and Performance in One Package WEDPN4M64V-XBX* Ideal for high performance processors and memory controllers see other side for typical application block diagrams • 58% space savings Compared to equivalvent TSOP solution

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

W332M64V-XBX

Abstract: WEDPN16M64V-XB2X
Contextual Info: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a

WEDPN4M72V-XB2X

Abstract: WEDPN8M72V-XB2X
Contextual Info: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES „ „ GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

W332M64V-XBX

Abstract: WEDPN16M64V-XB2X
Contextual Info: White Electronic Designs WEDPN16M64V-XB2X 16Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing 268,435,456 bits. Each chip is internally configured as a

Contextual Info: WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

WEDPN4M72V-XB2X

Abstract: WEDPN8M72V-XB2X
Contextual Info: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a

WEDPN16M64V-XB2X

Abstract: WEDPN8M64V-XB2X
Contextual Info: White Electronic Designs WEDPN8M64V-XB2X 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with a synchronous interface. Each of

WEDPN4M64V-XBX

Contextual Info: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s

WEDPN4M64V-XBX

Contextual Info: White Electronic Designs WEDPN4M64V-XBX 4Mx64 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a

DFE-2624X

Abstract: DFE-260FX DFE-2624 d-link dfe 2624 DLINK DFE-2624 Circuit dlink DFE-2624i DFE-2624ix dlink rj45 DFE-2616X
Contextual Info: DFE-2600 Series Ethernet/Fast Ethernet Dual-Speed Managed/Unmanaged Stackable Hubs User Guide Rev. 03 December, 1998 6DFE2600M.03 Printed In Taiwan RECYCLABLE Trademarks Copyright 1998 D-Link Corporation. Contents subject to change without prior notice.

Contextual Info: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a

Contextual Info: White Electronic Designs WEDPN8M64V-XB2X PRELIMINARY* 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a

PC133 registered reference design

Abstract: 128MByt
Contextual Info: White Electronic Designs 16Mx64 Synchronous DRAM WEDPN16M64V-XB2X PRELIMINARY* FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125MHz  Package: The 128MByte 1Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 4 chips containing

WEDPN16M64V-XB2X

Abstract: WEDPN8M64V-XB2X bt 432
Contextual Info: White Electronic Designs WEDPN8M64V-XB2X 8Mx64 Synchronous DRAM GENERAL DESCRIPTION FEATURES „ „ „ „ „ „ „ „ „ „ „ „ The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a