4416N Search Results

Contextual Info: ADE-203-468 Z 4416N Series 1,048,576-word x 16-bit / 2,097,152-word x 8-bit CMOS Programmable Mask ROM Preliminary |_ | I T A O U I I • ■1 i The H N 62W 4416N is a 16-M bit CM OS Programm able M ask ROM organized either as 1,048,576 words by 16 bits or 2,097,152 words by

Contextual Info: 4416N Series 1048576-word x 16-bit/2097152-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-468 Z Preliminary Rev. 0.0 Nov. 20, 1995 Description The HN62W 4416N is a 16-Mbit CMOS mask-Programmable ROM organized either as 1048576 words by 16 bits or 2097152 words by 8 bits. Realizing low power consumption, this memory is allowed for battery

44-12N1

Abstract: M5 DIODE 22-35 L M5 DIODE 22-35 K/M5 DIODE 22-35 L 44-08N1
Contextual Info: Diode Modules MDD 44 IFRMS = 2 x 100 A I FAVM = 2 x 64 A VRRM = 800 - 1800 V VRSM VRRM V V 3 Type 1 2 2 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS I FAVM Test Conditions TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine I FSM TVJ = 45°C;

Contextual Info: 4bflbE2b 0 0 0 1 7 0 0 231 » I X Y nixYS MDD44 Diode Modules lTAV = 2 x 59 A V„pM= 400-1800 V V rsm V Vrrm V Type Version 1 B 500 700 900 1300 1600 1700 1900 4 00 6 00 8 00 1200 1400 1600 1800* M D D 44-04N1 MDD44-O0N1 M D D 44-08N 1 M D D 44-12N 1 M D D 44-14N 1

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series

M5 DIODE 22-35 L

Abstract: DIODE 22-35 L
Contextual Info: MDD 44 IFRMS = 2x 100 A IFAVM = 2x 64 A VRRM = 800-1800 V Diode Modules VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 3 Type 1 2 2 1 MDD 44-08N1 B MDD 44-12N1 B MDD 44-14N1 B MDD 44-16N1 B MDD 44-18N1 B Symbol IFRMS IFAVM Test Conditions TVJ = TVJM

MDD 500-22N1

Abstract: MDO 500-12N1 500-22N1 255-16N1 26-14N1B 500-20N1 MDD 172-14N1
Contextual Info: Diode Modules, J - L 1 » 1-N— 11 I L w 1 Single and Dual -J MDO lFAV= 36-560 A v Type I FAV @ T'C V A X 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800 800 1200 1400 1600 1800_

ixys MDD 26 - 14

Abstract: MDD 500-22N1 MDO 220-14N1 ixys MDD 172 12 DIODE 22-35 L M5 DIODE 22-35 L ixys MDD 26 14 MDD 500-12N1 ixys MDD 172 16 IXYS MCC 310
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 1 MDA 72 D8 - 11 36 l l l l l MDD 26 D8 - 2 64 l l l l l MDD 44 D8 - 5 l l l l l MDD 56 D8 - 8 l l l l l MDD 72 D8 - 11 120 l l l l l l l

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

MDD 500-12N1

Abstract: 142-12N1 26-16N1B 172-14N1 72-08N1 172-18N1 500-14N1 MDD 500-14N1 56-18N1 56-14N1B
Contextual Info: , Diode Modules Single and Double lFAV = 36-500 A Type ^th JC *FSM p mQ 0.8 6.0 K/W K/W 1.0 0.2 MDD MDD MDD MDD MDD 26-08N1B 26-12N1B 26-14N1B 26-16N1B 26-18N1B 800 1200 1400 1600 1800 36 MDD MDD MDD MDD MDD 44-08N1B 44-12N1B 44-14N1B 44-16N1B 44-18N1B 800

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

MDD 500-22N1

Abstract: ixys MDD 26 - 14 ixys MDD 172 12 B2U 250 S2MD 2235nm ixys MCC 700 IXYS MCC 550 mcc 550 ixys MDD 500-12N1
Contextual Info: Rectifier Diode Modules Contents 2000 Type Page 2200 1800 1600 1200 A VRRM/VDRM V 800 IFAVM 1400 Package style Diode Modules 1 4 1999 IXYS All rights reserved MDD 26 D6-2 ● ● ● ● ● MDD 44 D6-5 95 ● ● ● ● ● MDD 56 D6-8 ● ● ● ● ●

220-14N1

Abstract: 172-16N1 220-12n1 220-08N1 220-16n1 250-08N1 172-08N1 MDD 172-08N1 TO-240AA 4404n
Contextual Info: Diode Modules •f lFAV = 36-305 A Type *F * v S E 72 873 (M) ► New !► MOD 26-18N1B * MDD 28-16N1B 1800 1600 1400 MD026-12N1B MDD 26-08N1B 1200 ► MDD 44-18N1B* MDD 44-16N1B • MDD 44-14N1B *iwc 36 100 60 650 Ru>cie par chip per chip 4S*C 10 RIS

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01