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    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿P D 4 3 1 0 1 6 L 1 M-BIT CMOS FAST STATIC RAM 64 K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM, Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF 16-BIT uPD431016L /iPD431016L 44-pin PD4310161- jUPD431016L iiPD431016LLE:

    NEC B 536

    Abstract: 431016LLE
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The /iPD431016L is a high speed, low power, 1, 048, 576 bits 65, 536 words by 16 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF 431016L 64K-WORD 16-BIT uPD431016L /iPD431016L 44-pin 431016LLE-Al7 /JPD431016LLE-A20 091-oooi NEC B 536 431016LLE

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431016L 1M-BIT CMOS FAST STATIC RAM 64K-WORD BY 16-BIT Description The //PD431016L is a high speed, lo w pow er, 1, 048, 576 b its 65, 536 w o rd s by 16 b its CMOS s ta tic RAM. O p e ra tin g s u p p ly vo lta g e is 3.3 V ± 0.3 V.


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    PDF PD431016L 64K-WORD 16-BIT //PD431016L /iPD431016L 44-pin 431016LLE-A PD431016LLE-A20 /iPD431016L. /PD431016LLE: