424100A Search Results

SIMM 30-pin

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

nec 424100

Abstract: 424100 nec v70 LA80 pd424100
Contextual Info: N E C Electronics Inc. JIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CMOS RAM Description Features .Erf W The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

nec 424100

Contextual Info: M ié W W NEC Electronics Inc. JLIPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CM O S RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ­

30-pin simm memory dynamic

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

adret

Abstract: 42S41 424100 CSR BLE m07b
Contextual Info: £ Q E L E C T R O N I C S I N C b l E D • b 4 B V S 2 S 0 0 3 3 S 7 b DSG H N E C E NEC Electronics Inc. /JPD424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit D yn am ic C M O S R A M Description Features T \ l Md W T he devices listed below are fast-page dynam ic RAMs

Contextual Info: NEC Electronics Inc. MC-424000A9, -424100A 9 4,194,304 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C -424000A 9 and the MC-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o p e ra te from a single + 5 -v o lt power supply.

424100A

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ­

MC-424000A9BA

Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
Contextual Info: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

A/M29F010B(45/70/90/MT352/CG/sigma asc 333

Contextual Info: L IÆ j W NEC Electronics Inc. HIPD424100, 4241OOA/L, 42S41OOA/L 4,194,304 x 1-Bit Dynamic CMOS RAM October 1992 Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

N42C

Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
Contextual Info: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A